Patents by Inventor Huan-Chi SHIH

Huan-Chi SHIH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MEMORY DEVICE AND FORMATION METHOD THEREOF
    Publication number: 20230397501
    Abstract: A method of forming a memory device including forming a bottom electrode via (BEVA) in a dielectric layer, forming a magnetic tunnel junction (MTJ) multilayer structure over the BEVA, forming a top electrode on the MTJ multilayer structure, patterning the MTJ multilayer structure using the top electrode as an etch mask to form a MTJ stack, forming a first interlayer dielectric (ILD) layer over the MTJ stack, and after forming the first ILD layer, forming a ferromagnetic metal that exerts a magnetic field on the MTJ stack.
    Type: Application
    Filed: June 2, 2022
    Publication date: December 7, 2023
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Ya-Jui TSOU, Jih-Chao CHIU, Huan-Chi SHIH, Chee-Wee LIU, Shao-Yu LIN, Chih-Lin WANG