Patents by Inventor Huan-Chieh CHEN

Huan-Chieh CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220013453
    Abstract: A method includes providing a fin, an isolation structure, and first and second source/drain (S/D) features over the fin; forming an etch mask covering a first portion and exposing a second portion of the fin; removing the second portion of the fin, resulting in a first trench; filling the first trench with a first dielectric feature; removing the etch mask; and applying etching process(es) to remove the first portion of the fin and to partially recess the first S/D feature. The etching process(es) includes an isotropic etching tuned selective to materials of the first S/D feature and not materials of the isolation structure and the first dielectric feature, resulting in a second trench under the first S/D feature and having a gap between a bottom surface of the first S/D feature and a top surface of the isolation structure. The method further includes forming a via in the second trench.
    Type: Application
    Filed: July 10, 2020
    Publication date: January 13, 2022
    Inventors: Chun-Yuan Chen, Huan-Chieh Su, Cheng-Chi Chuang, Chih-Hao Wang
  • Patent number: 11222892
    Abstract: A semiconductor device according to the present disclosure includes a bottom dielectric feature on a substrate, a plurality of channel members directly over the bottom dielectric feature, a gate structure wrapping around each of the plurality of channel members, two first epitaxial features sandwiching the bottom dielectric feature along a first direction, and two second epitaxial features sandwiching the plurality of channel members along the first direction.
    Type: Grant
    Filed: June 15, 2020
    Date of Patent: January 11, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Huan-Chieh Su, Li-Zhen Yu, Chun-Yuan Chen, Shih-Chuan Chiu, Cheng-Chi Chuang, Yu-Ming Lin, Chih-Hao Wang
  • Patent number: 11214868
    Abstract: The present disclosure provides a blocker plate, including a plate body having a plurality of through holes, a first zone from a center to a first radius of the plate body, having a first conductance, a second zone from the first radius to a second radius of the plate body, having a second conductance, a third zone from the second radius to a third radius of the plate body, having a third conductance, wherein the first radius is smaller than the second radius, the second radius is smaller than the third radius, and the second conductance is greater than the first conductance. A chemical vapor deposition (CVD) apparatus including the blocker plate is also disclosed.
    Type: Grant
    Filed: June 27, 2019
    Date of Patent: January 4, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Huan-Chieh Chen, Chao-Chun Wang, Chih-Yu Wu, Keith Kuang-Kuo Koai
  • Publication number: 20210407994
    Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a source region, a drain region, and a gate electrode layer disposed between the source region and the drain region. The gate electrode layer includes a first surface facing the source region, and the first surface includes an edge portion having a first height. The gate electrode layer further includes a second surface opposite the first surface and facing the drain region. The second surface includes an edge portion having a second height. The second height is different from the first height.
    Type: Application
    Filed: June 29, 2020
    Publication date: December 30, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Huan-Chieh SU, Chun-Yuan CHEN, Pei-Yu WANG, Cheng-Chi CHUANG, Chih-Hao WANG
  • Publication number: 20210399109
    Abstract: An IC structure includes a source epitaxial structure, a drain epitaxial structure, a first silicide region, a second silicide region, a source contact, a backside via rail, a drain contact, and a front-side interconnection structure. The first silicide region is on a front-side surface and a first sidewall of the source epitaxial structure. The second silicide region is on a front-side surface of the drain epitaxial structure. The source contact is in contact with the first silicide region and has a protrusion extending past a backside surface of the source epitaxial structure. The backside via rail is in contact with the protrusion of the source contact. The drain contact is in contact with the second silicide region. The front-side interconnection structure is on a front-side surface of the source contact and a front-side surface of the drain contact.
    Type: Application
    Filed: January 24, 2021
    Publication date: December 23, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Huan-Chieh SU, Li-Zhen YU, Chun-Yuan CHEN, Cheng-Chi CHUANG, Shang-Wen CHANG, Yi-Hsun CHIU, Pei-Yu WANG, Ching-Wei TSAI, Chih-Hao WANG
  • Publication number: 20210054506
    Abstract: A shower head structure and a plasma processing apparatus are provided. The shower head structure includes a plate body with a first zone and a second zone on a first surface. A plurality of first through holes are in the first zone, each of the first through holes having a diameter uniform with others of the first through holes. A plurality of second through holes are in the second zone. The first zone is in connection with the second zone, and the diameter of each of the first through holes is greater than a diameter of each of the second through holes. A plasma processing apparatus includes the shower head structure is also provided.
    Type: Application
    Filed: August 23, 2019
    Publication date: February 25, 2021
    Inventors: HUAN-CHIEH CHEN, JHIH-REN LIN, TAI-PIN LIU, SHYUE-SHIN TSAI, KEITH KUANG-KUO KOAI
  • Publication number: 20200131640
    Abstract: The present disclosure provides a blocker plate, including a plate body having a plurality of through holes, a first zone from a center to a first radius of the plate body, having a first conductance, a second zone from the first radius to a second radius of the plate body, having a second conductance, a third zone from the second radius to a third radius of the plate body, having a third conductance, wherein the first radius is smaller than the second radius, the second radius is smaller than the third radius, and the second conductance is greater than the first conductance. A chemical vapor deposition (CVD) apparatus including the blocker plate is also disclosed.
    Type: Application
    Filed: June 27, 2019
    Publication date: April 30, 2020
    Inventors: HUAN-CHIEH CHEN, CHAO-CHUN WANG, CHIH-YU WU, KEITH KUANG-KUO KOAI
  • Patent number: 10626499
    Abstract: A deposition device structure is provided. The deposition device structure includes a heater in a chamber. The deposition device structure also includes a shower head over the heater. The shower head includes holes extending from a top surface of the shower head to a bottom surface of the shower head. The bottom surface of the shower head faces the heater. The bottom surface of the shower head has a first section and a second section. The second section of the bottom surface is rougher than the first section of the bottom surface.
    Type: Grant
    Filed: October 5, 2017
    Date of Patent: April 21, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yen-Chan Lo, Huan-Chieh Chen, Yi-Fang Lai, Keith Kuang-Kuo Koai, Chin-Feng Sun, Po-Hsiung Leu, Ding-I Liu, Kai-Shiung Hsu
  • Publication number: 20190032215
    Abstract: A deposition device structure is provided. The deposition device structure includes a heater in a chamber. The deposition device structure also includes a shower head over the heater. The shower head includes holes extending from a top surface of the shower head to a bottom surface of the shower head. The bottom surface of the shower head faces the heater. The bottom surface of the shower head has a first section and a second section. The second section of the bottom surface is rougher than the first section of the bottom surface.
    Type: Application
    Filed: October 5, 2017
    Publication date: January 31, 2019
    Inventors: Yen-Chan LO, Huan-Chieh CHEN, Yi-Fang LAI, Keith Kuang-Kuo KOAI, Chin-Feng SUN, Po-Hsiung LEU, Ding-I LIU, Kai-Shiung HSU