Patents by Inventor Huan-Chung WANG

Huan-Chung WANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Enhanced GaN transistor and the forming method thereof
    Patent number: 9240474
    Abstract: An enhanced GaN transistor is provided. The structure comprises a substrate, a heterostructure, a p-element epitaxy growth layer, a drain ohmic contact and a source ohmic contact disposed on the heterostructure and on two sides of the p-element epitaxy growth layer, a gate structure disposed on the p-element epitaxy growth layer, and is separated from the drain ohmic contact and the source ohmic contact, a surface passivation layer covered the drain ohmic contact, source ohmic contact, and p-element epitaxy growth layer, and covered portion of the gate structure.
    Type: Grant
    Filed: October 10, 2013
    Date of Patent: January 19, 2016
    Assignee: National Chiao Tung University
    Inventors: Yi Chang, Yueh-Chin Lin, Huan-Chung Wang
  • Enhanced GaN Transistor and the Forming Method Thereof
    Publication number: 20140346523
    Abstract: An enhanced GaN transistor is provided. The structure comprises a substrate, a heterostructure, a p-element epitaxy growth layer, a drain ohmic contact and a source ohmic contact disposed on the heterostructure and on two sides of the p-element epitaxy growth layer, a gate structure disposed on the p-element epitaxy growth layer, and is separated from the drain ohmic contact and the source ohmic contact, a surface passivation layer covered the drain ohmic contact, source ohmic contact, and p-element epitaxy growth layer, and covered portion of the gate structure.
    Type: Application
    Filed: October 10, 2013
    Publication date: November 27, 2014
    Applicant: National Chiao Tung University
    Inventors: Yi CHANG, Yueh-Chin LIN, Huan-Chung WANG