Patents by Inventor Huan-En Lin

Huan-En Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor image sensor having reflection component and method of making
    Patent number: 11923393
    Abstract: A semiconductor image sensor includes a pixel. The pixel includes a first substrate; and a photodiode in the first substrate. The semiconductor image sensor further includes an interconnect structure electrically connected to the pixel. The semiconductor image sensor further includes a reflection structure between the interconnect and the photodiode, wherein the reflection structure is configured to reflect light passing through the photodiode back toward the photodiode.
    Type: Grant
    Filed: January 7, 2021
    Date of Patent: March 5, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chun-Liang Lu, Cheng-Hao Chiu, Huan-En Lin, Chun-Hao Chou, Kuo-Cheng Lee
  • SEMICONDUCTOR IMAGE SENSOR HAVING REFLECTION COMPONENT AND METHOD OF MAKING
    Publication number: 20220216261
    Abstract: A semiconductor image sensor includes a pixel. The pixel includes a first substrate; and a photodiode in the first substrate. The semiconductor image sensor further includes an interconnect structure electrically connected to the pixel. The semiconductor image sensor further includes a reflection structure between the interconnect and the photodiode, wherein the reflection structure is configured to reflect light passing through the photodiode back toward the photodiode.
    Type: Application
    Filed: January 7, 2021
    Publication date: July 7, 2022
    Inventors: Chun-Liang LU, Cheng-Hao CHIU, Huan-En LIN, Chun-Hao CHOU, Kuo-Cheng LEE
  • Backside illuminated image sensor and method of manufacturing the same
    Patent number: 9548329
    Abstract: A backside illuminated (BSI) image sensor device includes: a first substrate including a front side and a back side; a second substrate bonded with the first substrate on the front side; and a blocking layer between the first substrate and the second substrate. The first substrate includes an image sensor, and the image sensor is configured to collect incident light entering from the back side. The second substrate includes a circuit coupled with the image sensor. The blocking layer is configured to block radiation induced by the circuit.
    Type: Grant
    Filed: July 2, 2014
    Date of Patent: January 17, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Huan-En Lin, Shiu-Ko Jangjian, Volume Chien, Fu-Tsun Tsai, Yung-Lung Hsu, Chi-Cherng Jeng
  • Deep trench isolation with air-gap in backside illumination image sensor chips
    Patent number: 9293490
    Abstract: An integrated circuit structure includes a semiconductor substrate, an image sensor extending from a front surface of the semiconductor substrate into the semiconductor substrate, and an isolation structure extending from a back surface of the semiconductor substrate into the semiconductor substrate, wherein the isolation structure includes an air-gap therein. An air-gap sealing layer is on a backside of the semiconductor substrate. The air-gap sealing layer seals the air-gap, wherein the air-gap sealing layer includes a portion exposed to the air-gap.
    Type: Grant
    Filed: March 14, 2014
    Date of Patent: March 22, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Volume Chien, Yu-Heng Cheng, Huan-En Lin, Chi-Cherng Jeng, Fu-Tsun Tsai
  • BACKSIDE ILLUMINATED IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20160005781
    Abstract: A backside illuminated (BSI) image sensor device includes: a first substrate including a front side and a back side; a second substrate bonded with the first substrate on the front side; and a blocking layer between the first substrate and the second substrate. The first substrate includes an image sensor, and the image sensor is configured to collect incident light entering from the back side. The second substrate includes a circuit coupled with the image sensor. The blocking layer is configured to block radiation induced by the circuit.
    Type: Application
    Filed: July 2, 2014
    Publication date: January 7, 2016
    Inventors: HUAN-EN LIN, SHIU-KO JANGJIAN, VOLUME CHIEN, FU-TSUN TSAI, YUNG-LUNG HSU, CHI-CHERNG JENG
  • DEEP TRENCH ISOLATION WITH AIR-GAP IN BACKSIDE ILLUMINATION IMAGE SENSOR CHIPS
    Publication number: 20150263054
    Abstract: An integrated circuit structure includes a semiconductor substrate, an image sensor extending from a front surface of the semiconductor substrate into the semiconductor substrate, and an isolation structure extending from a back surface of the semiconductor substrate into the semiconductor substrate, wherein the isolation structure includes an air-gap therein. An air-gap sealing layer is on a backside of the semiconductor substrate. The air-gap sealing layer seals the air-gap, wherein the air-gap sealing layer includes a portion exposed to the air-gap.
    Type: Application
    Filed: March 14, 2014
    Publication date: September 17, 2015
    Inventors: Volume Chien, Yu-Heng Cheng, Huan-En Lin, Chi-Cherng Jeng, Fu-Tsun Tsai