Patents by Inventor Huan-Kun Pan

Huan-Kun Pan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Pixel array of image sensor and method of fabricating the same
    Patent number: 9570492
    Abstract: A pixel array of an image sensor includes multiple red, green, blue and panchromatic pixels. The red, green and blue pixels are formed on a substrate during a first process. Planarization material is deposited to form the panchromatic pixels on the substrate and to form a planarization layer on the red, green and blue pixels during the same second process subsequent to the first process. The planarization material of the panchromatic pixels and the planarization layer is characterized in high transmittance and high aspect ratio.
    Type: Grant
    Filed: December 1, 2015
    Date of Patent: February 14, 2017
    Assignee: PixArt Imaging Inc.
    Inventors: Han-Chi Liu, Huan-Kun Pan, En-Feng Hsu
  • Front side illuminated semiconductor structure with improved light absorption efficiency
    Patent number: 9536914
    Abstract: There is provided a front side illuminated (FSI) semiconductor structure with improved light absorption efficiency which is configured to provide a reflecting layer on a bottom of the FSI semiconductor structure to enhance the light absorption efficiency, wherein the reflecting layer is manufactured in the packaging process or the semiconductor process.
    Type: Grant
    Filed: January 6, 2015
    Date of Patent: January 3, 2017
    Assignee: PIXART IMAGING INC.
    Inventors: Sen-Huang Huang, Huan-Kun Pan, Yi-Chang Chang, Ching-Wei Chen
  • PIXEL ARRAY OF IMAGE SENSOR AND METHOD OF FABRICATING THE SAME
    Publication number: 20160086990
    Abstract: A pixel array of an image sensor includes multiple red, green, blue and panchromatic pixels. The red, green and blue pixels are formed on a substrate during a first process. Planarization material is deposited to form the panchromatic pixels on the substrate and to form a planarization layer on the red, green and blue pixels during the same second process subsequent to the first process. The planarization material of the panchromatic pixels and the planarization layer is characterized in high transmittance and high aspect ratio.
    Type: Application
    Filed: December 1, 2015
    Publication date: March 24, 2016
    Inventors: Han-Chi Liu, Huan-Kun Pan, En-Feng Hsu
  • FRONT SIDE ILLUMINATED SEMICONDUCTOR STRUCTURE WITH IMPROVED LIGHT ABSORPTION EFFICIENCY AND MANUFACTURING METHOD THEREOF
    Publication number: 20150325616
    Abstract: There is provided a front side illuminated (FSI) semiconductor structure with improved light absorption efficiency which is configured to provide a reflecting layer on a bottom of the FSI semiconductor structure to enhance the light absorption efficiency, wherein the reflecting layer is manufactured in the packaging process or the semiconductor process.
    Type: Application
    Filed: January 6, 2015
    Publication date: November 12, 2015
    Inventors: SEN-HUANG HUANG, HUAN-KUN PAN, YI-CHANG CHANG, CHING-WEI CHEN
  • Ultra-violet light sensing device and manufacturing method thereof
    Patent number: 8912619
    Abstract: The present invention provides an ultra-violet light sensing device. The ultra-violet light sensing device includes a first conductivity type substrate, a second conductivity type region, and a first conductivity type high density region. The first conductivity type substrate includes a light incident surface. The second conductivity type region is disposed in the first conductivity type substrate and adjacent to the light incident surface. The first conductivity type high density region is disposed under the second conductivity type region. The present invention also provides another ultra-violet light sensing device, which further includes a first conductivity type high density shallow region which is sandwiched between the light incident surface and the second conductivity type region. Manufacturing methods for these ultra-violet light sensing devices are also disclosed in the present invention.
    Type: Grant
    Filed: May 31, 2013
    Date of Patent: December 16, 2014
    Assignee: Pixart Imaging Incorporation
    Inventors: Han-Chi Liu, Huan-Kun Pan, Eiichi Okamoto
  • ULTRA-VIOLET LIGHT SENSING DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20130341690
    Abstract: The present invention provides an ultra-violet light sensing device. The ultra-violet light sensing device includes a first conductivity type substrate, a second conductivity type region, and a first conductivity type high density region. The first conductivity type substrate includes a light incident surface. The second conductivity type region is disposed in the first conductivity type substrate and adjacent to the light incident surface. The first conductivity type high density region is disposed under the second conductivity type region. The present invention also provides another ultra-violet light sensing device, which further includes a first conductivity type high density shallow region which is sandwiched between the light incident surface and the second conductivity type region. Manufacturing methods for these ultra-violet light sensing devices are also disclosed in the present invention.
    Type: Application
    Filed: May 31, 2013
    Publication date: December 26, 2013
    Applicant: PIXART IMAGING INCORPORATION, R.O.C.
    Inventors: Han-Chi Liu, Huan-Kun Pan, Eiichi Okamoto