Abstract: A semiconductor device with dual side source/drain (S/D) contact structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a superlattice structure on the fin structure, forming first and second S/D regions within the superlattice structure, forming a gate structure between the first and second S/D regions, forming first and second contact structures on first surfaces of the first and second S/D regions, and forming a third contact structure, on a second surface of the first S/D region, with a work function metal (WFM) silicide layer and a dual metal liner. The second surface is opposite to the first surface of the first S/D region and the WFM silicide layer has a work function value closer to a conduction band energy than a valence band energy of a material of the first S/D region.

Abstract: An easily and firmly secured wood plate comprises a male buckling portion and a female buckling portion at two opposite sides. An upper half of the male buckling portion is protruded with a buckling block. A lower edge of the buckling block is protruded with a buckling tip which is slightly inclined. An upper half of the female buckling portion is formed with an embedding groove at a position coupled to the buckling block of the male buckling portion. A lower end of the embedding groove has a slightly inclined buckling pit. In assembly, the buckling block of the male buckling portion is buckled into the embedding groove of the female buckling portion by the engagement of the inclined surfaces of the buckling tip and the buckling pit. Thereby, a plurality of wood plate units can be connected one by one.