Patents by Inventor Huan-Ping Su

Huan-Ping Su has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating thin O/N/O stacked dielectric for high-density DRAMs
    Patent number: 5504021
    Abstract: A method of fabricating a super thin O/N/O stacked dielectric by oxidizing a thin nitride layer in low pressure oxygen for high-density DRAMs is disclosed. A thin nitride layer with a thickness of approximately 20 .ANG. to 60 .ANG. is formed over the surface of a silicon substrate. The nitride layer is oxidized in pure oxygen ambient of 0.01 Torr to 76 Torr at a temperature from 750.degree. C. to 950.degree. C. for approximately 10 to 60 minutes. A super thin oxide/nitride/oxide (O/N/O) stacked dielectric exhibiting a low leakage current and high reliability for use in high-density DRAMs is formed by the aforementioned low-pressure dry-oxidation procedure.
    Type: Grant
    Filed: August 15, 1994
    Date of Patent: April 2, 1996
    Assignee: United Microelectronics Corp.
    Inventors: Gary Hong, Huang-Chung Cheng, Huan-Ping Su, Han-Wen Liu