Patents by Inventor Huan-Ping Teng
Huan-Ping Teng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210276034Abstract: The present invention discloses an aperture plate and an aerosol generator. The aperture plate is made by metal materials with a plurality of apertures. The aperture plate has a multi-layer structure, which comprises a substrate, a protective layer and/or at least one intermediate layer between the substrate and the protective layer. The intermediate layer is configured to enhance the adhesion between the substrate and the protective layer, so that it can increase the durability of the aperture plate. The aperture plate can be a dome-shaped, a flat-shaped or an irregular shape. The aperture plate of the present invention can optimize the volume and size of droplets under the vibration at certain frequency.Type: ApplicationFiled: September 24, 2020Publication date: September 9, 2021Inventors: Chih-Hsien CHOU, Huan-Ping TENG, Chih-Hsiang HSU
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Patent number: 9943873Abstract: The invention relates to an atomizing plug assembly and an atomizer formed thereby. The atomizing plug assembly comprises a containing part and an atomizing part. The containing part has a containing body. The containing body defines a containing space for containing a liquid to be atomized and has an aerosol opening which communicates with the containing space. The atomizing part is integrated with or detachably connected with the containing part and has a vibrating member and a nozzle plate. The vibrating member has an atomizing electrical connecting portion, where the vibrating member is electrically connected, and a pin element electrically connected with the atomizing electrical connecting portion. The nozzle plate is located corresponding to the aerosol opening. The atomizer is formed by electrically connecting the atomizing plug assembly to a base.Type: GrantFiled: December 7, 2017Date of Patent: April 17, 2018Assignee: Taiwan Puritic Corp.Inventor: Huan-Ping Teng
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Publication number: 20180093292Abstract: The invention relates to an atomizing plug assembly and an atomizer formed thereby. The atomizing plug assembly comprises a containing part and an atomizing part. The containing part has a containing body. The containing body defines a containing space for containing a liquid to be atomized and has an aerosol opening which communicates with the containing space. The atomizing part is integrated with or detachably connected with the containing part and has a vibrating member and a nozzle plate. The vibrating member has an atomizing electrical connecting portion, where the vibrating member is electrically connected, and a pin element electrically connected with the atomizing electrical connecting portion. The nozzle plate is located corresponding to the aerosol opening. The atomizer is formed by electrically connecting the atomizing plug assembly to a base.Type: ApplicationFiled: December 7, 2017Publication date: April 5, 2018Inventor: Huan-Ping TENG
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Patent number: 9511389Abstract: The present invention relates to a nozzle plate structure which comprises a plate and a plurality of orifices penetrating the plate. Each orifice comprises a liquid-storing space and a liquid-outputting space. Through the configuration of the liquid-storing space, the liquid in a container can be smoothly educed therefrom. Through the configuration of the liquid-outputting space, liquid dripping can be decreased. Alternatively, a liquid-guiding space is arranged between the liquid-storing space and the liquid-outputting space, so that the resonance oscillation of the liquid in the orifice can be enhanced. Further, the remaining liquid in the liquid-outputting space can be reabsorbed by the capillarity of the liquid-guiding space.Type: GrantFiled: May 1, 2014Date of Patent: December 6, 2016Assignee: Taiwan Puritic Corp.Inventors: Huan-Ping Teng, Chih-Hsiang Hsu
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Publication number: 20150367374Abstract: The invention relates to an atomizing assembly and an atomizer formed thereby. The atomizing assembly comprises a containing part and an atomizing part. The containing part has a containing body. The containing body defines a containing space for containing a liquid to be atomized and has an opening which communicates with the containing space. The atomizing part is integrated with or detachably connected with the containing part and has a vibrating member and a nozzle plate. The vibrating member has an atomizing electrical connecting portion, where the vibrating member is electrically connected, and a pin element electrically connected with the atomizing electrical connecting portion. The nozzle plate is located corresponding to the opening. The atomizer is formed by electrically connecting the atomizing assembly to a base.Type: ApplicationFiled: October 31, 2014Publication date: December 24, 2015Inventor: Huan-Ping TENG
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Publication number: 20150209806Abstract: The present invention relates to a nozzle plate structure which comprises a plate and a plurality of orifices penetrating the plate. Each orifice comprises a liquid-storing space and a liquid-outputting space. Through the configuration of the liquid-storing space, the liquid in a container can be smoothly educed therefrom. Through the configuration of the liquid-outputting space, liquid dripping can be decreased. Alternatively, a liquid-guiding space is arranged between the liquid-storing space and the liquid-outputting space, so that the resonance oscillation of the liquid in the orifice can be enhanced. Further, the remaining liquid in the liquid-outputting space can be reabsorbed by the capillarity of the liquid-guiding space.Type: ApplicationFiled: May 1, 2014Publication date: July 30, 2015Applicant: Taiwan Puritic Corp.Inventors: Huan-Ping TENG, CHIH-HSIANG HSU
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Patent number: 8808522Abstract: A method for forming an oxide film by plasma electrolytic oxidation includes a first step of placing an anode, which is a substrate with a conductive nitride film, and a cathode into an electrolyte of which the temperature range is from 20° C. to 100° C., and a second step of applying a voltage ranging from 50 V to 1000 V to the anode and cathode to finally form an oxide film on a surface of the conductive nitride film of the anode. The oxide film can be formed more rapidly than the prior art and has excellent crystallinity.Type: GrantFiled: September 7, 2011Date of Patent: August 19, 2014Assignee: National Chung Hsing UniversityInventors: Fu-Hsing Lu, Jhu-Ling Zeng, Huan-Ping Teng
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Patent number: 8808523Abstract: A method for forming a ZrO2 oxide film by plasma electrolytic oxidation includes a first step of placing an anode, which is a substrate with a ZrN film, and a cathode into an electrolyte of which the temperature range is from 65° C. to 75° C. Said electrolyte contains barium acetate or barium hydroxide ranging from 0.3 M to 0.7 M and sodium hydroxide or potassium hydroxide ranging from 1.5 M to 2.5 M. The method includes a second step of applying a voltage ranging from 50 V to 1000 V to the anode and cathode to finally form a ZrO2 film on a surface of the ZrN film of the anode. A DC power supply, an AC power supply, unipolar pulse power supply or bipolar pulse power supply is applied to said anode and cathode in constant-voltage mode or constant-current mode. The oxide film can be formed more rapidly than the prior art and has excellent crystallinity.Type: GrantFiled: July 30, 2013Date of Patent: August 19, 2014Assignee: National Chung Hsing UniversityInventors: Fu-Hsing Lu, Jhu-Ling Zeng, Huan-Ping Teng
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Publication number: 20130306487Abstract: A method for forming a ZrO2 oxide film by plasma electrolytic oxidation includes a first step of placing an anode, which is a substrate with a ZrN film, and a cathode into an electrolyte of which the temperature range is from 65° C. to 75° C. Said electrolyte contains barium acetate or barium hydroxide ranging from 0.3 M to 0.7 M and sodium hydroxide or potassium hydroxide ranging from 1.5 M to 2.5 M. The method includes a second step of applying a voltage ranging from 50 V to 1000 V to the anode and cathode to finally form a ZrO2 film on a surface of the ZrN film of the anode. A DC power supply, an AC power supply, unipolar pulse power supply or bipolar pulse power supply is applied to said anode and cathode in constant-voltage mode or constant-current mode. The oxide film can be formed more rapidly than the prior art and has excellent crystallinity.Type: ApplicationFiled: July 30, 2013Publication date: November 21, 2013Applicant: NATIONAL CHUNG HSING UNIVERSITYInventors: Fu-Hsing LU, Jhu-Ling ZENG, Huan-Ping TENG
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Publication number: 20130056360Abstract: A method for forming an oxide film by plasma electrolytic oxidation includes a first step of placing an anode, which is a substrate with a conductive nitride film, and a cathode into an electrolyte of which the temperature range is from 20° C. to 100° C., and a second step of applying a voltage ranging from 50 V to 1000 V to the anode and cathode to finally form an oxide film on a surface of the conductive nitride film of the anode. The oxide film can be formed more rapidly than the prior art and has excellent crystallinity.Type: ApplicationFiled: September 7, 2011Publication date: March 7, 2013Inventors: Fu-Hsing LU, Jhu-Ling Zeng, Huan-Ping Teng