Abstract: Photoresist reflow for an enhanced process window for non-dense contacts is disclosed. A corrective bias is determined for application to each of a number of contacts at different pitches, to achieve a substantially identical critical dimension for each contact. The corrective bias is determined based on a first and a second critical dimension for each contact, where the first critical dimension is before photoresist reflow, and potentially inclusive of optical proximity effects, and the second critical dimension is after photoresist reflow. A photomask is then constructed for a semiconductor design that incorporates the corrective bias that has been determined for the contacts of the design. Lithographical processing of the semiconductor design on a semiconductor wafer using thus photomask, and subsequent photoresist reflow, thus achieves a substantially identical critical dimension for each of the contacts of the semiconductor design.

Abstract: Photoresist reflow for an enhanced process window for non-dense contacts is disclosed. A corrective bias is determined for application to each of a number of contacts at different pitches, to achieve a substantially identical critical dimension for each contact. The corrective bias is determined based on a first and a second critical dimension for each contact, where the first critical dimension is before photoresist reflow, and potentially inclusive of optical proximity effects, and the second critical dimension is after photoresist reflow. A photomask is then constructed for a semiconductor design that incorporates the corrective bias that has been determined for the contacts of the design. Lithographical processing of the semiconductor design on a semiconductor wafer using thus photomask, and subsequent photoresist reflow, thus achieves a substantially identical critical dimension for each of the contacts of the semiconductor design.