Patents by Inventor Huan-Yu LAI
Huan-Yu LAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11848195Abstract: A semiconductor device is provided. The semiconductor device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active region between the second semiconductor layer and the first semiconductor layer; an electron blocking structure between the active region and the second semiconductor layer; a first nitride semiconductor layer between the active region and the electron blocking structure, and including indium and aluminum elements; and a second nitride semiconductor layer between the electron blocking structure and the second semiconductor layer, including indium element and devoid of gallium element; wherein the first nitride semiconductor layer has a first indium content, the second nitride semiconductor layer has a second indium content, and the first indium content is greater than the second indium content.Type: GrantFiled: November 3, 2022Date of Patent: December 19, 2023Assignee: EPISTAR CORPORATIONInventors: Huan-Yu Lai, Li-Chi Peng
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Publication number: 20230055668Abstract: A semiconductor device is provided. The semiconductor device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active region between the second semiconductor layer and the first semiconductor layer; an electron blocking structure between the active region and the second semiconductor layer; a first nitride semiconductor layer between the active region and the electron blocking structure, and including indium and aluminum elements; and a second nitride semiconductor layer between the electron blocking structure and the second semiconductor layer, including indium element and devoid of gallium element; wherein the first nitride semiconductor layer has a first indium content, the second nitride semiconductor layer has a second indium content, and the first indium content is greater than the second indium content.Type: ApplicationFiled: November 3, 2022Publication date: February 23, 2023Applicant: EPISTAR CORPORATIONInventors: Huan-Yu LAI, Li-Chi PENG
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Patent number: 11522102Abstract: A semiconductor device is provided. The semiconductor device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active region between the second semiconductor layer and the first semiconductor layer; an electron blocking structure between the active region and the second semiconductor layer; a first Group III-V semiconductor layer between the active region and the electron blocking structure; and a second Group III-V semiconductor layer between the electron blocking structure and the second semiconductor layer; wherein the first Group III-V semiconductor layer and the second Group III-V semiconductor layer each includes indium, aluminum and gallium, the first Group III-V semiconductor layer has a first indium content, the second Group III-V semiconductor layer has a second indium content, and the second indium content is less than the first indium content.Type: GrantFiled: January 15, 2021Date of Patent: December 6, 2022Assignee: EPISTAR CORPORATIONInventors: Huan-Yu Lai, Li-Chi Peng
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Publication number: 20210359158Abstract: A semiconductor device is provided. The semiconductor device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active region between the second semiconductor layer and the first semiconductor layer; an electron blocking structure between the active region and the second semiconductor layer; a first Group III-V semiconductor layer between the active region and the electron blocking structure; and a second Group III-V semiconductor layer between the electron blocking structure and the second semiconductor layer; wherein the first Group III-V semiconductor layer and the second Group III-V semiconductor layer each includes indium, aluminum and gallium, the first Group III-V semiconductor layer has a first indium content, the second Group III-V semiconductor layer has a second indium content, and the second indium content is less than the first indium content.Type: ApplicationFiled: January 15, 2021Publication date: November 18, 2021Inventors: Huan-Yu LAI, Li-Chi PENG
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Patent number: 10910518Abstract: A semiconductor device is provided. The semiconductor device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active region between the second semiconductor layer and the first semiconductor layer; an electron blocking structure between the active region and the second semiconductor layer; a first In-containing layer between the active region and the electron blocking structure; and a second In-containing layer between the electron blocking structure and the second semiconductor layer; wherein the first In-containing layer and the second In-containing layer each includes indium, aluminum and gallium, the first In-containing layer has a first aluminum content, the second In-containing layer has a second aluminum content, and the second aluminum content is less than the first aluminum content.Type: GrantFiled: May 13, 2020Date of Patent: February 2, 2021Assignee: EPISTAR CORPORATIONInventors: Huan-Yu Lai, Li-Chi Peng
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Publication number: 20200274028Abstract: A semiconductor device is provided. The semiconductor device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active region between the second semiconductor layer and the first semiconductor layer; an electron blocking structure between the active region and the second semiconductor layer; a first In-containing layer between the active region and the electron blocking structure; and a second In-containing layer between the electron blocking structure and the second semiconductor layer; wherein the first In-containing layer and the second In-containing layer each includes indium, aluminum and gallium, the first In-containing layer has a first aluminum content, the second In-containing layer has a second aluminum content, and the second aluminum content is less than the first aluminum content.Type: ApplicationFiled: May 13, 2020Publication date: August 27, 2020Inventors: Huan-Yu LAI, Li-Chi PENG
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Patent number: 10693038Abstract: A semiconductor device is provided. The semiconductor device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active region between the second semiconductor layer and the first semiconductor layer; an electron blocking structure on the active region; a first In-containing layer between the active region and the electron blocking structure; and a second In-containing layer on the electron blocking structure; wherein the first In-containing layer has a first indium content, the second In-containing layer has a second indium content, and the second indium content is different from the first indium content.Type: GrantFiled: November 7, 2018Date of Patent: June 23, 2020Assignee: EPISTAR CorporationInventors: Huan-Yu Lai, Li-Chi Peng
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Publication number: 20190157510Abstract: A semiconductor device is provided. The semiconductor device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active region between the second semiconductor layer and the first semiconductor layer; an electron blocking structure on the active region; a first In-containing layer between the active region and the electron blocking structure; and a second In-containing layer on the electron blocking structure; wherein the first In-containing layer has a first indium content, the second In-containing layer has a second indium content, and the second indium content is different from the first indium content.Type: ApplicationFiled: November 7, 2018Publication date: May 23, 2019Inventors: Huan-Yu LAI, Li-Chi PENG