Abstract: Motor control architecture including a travel, a hoist, and a controller is disclosed. The travel disposed on a main rail having an auxiliary-encoder includes a master-driver and a slave-driver for driving two motors. Each motor has a main-encoder. The hoist drives a rope and calculates a rope length continuously. The controller calculates an anti-sway position command based on the rope-length and a position command. The two drivers perform a full closed-loop computation based on a feedback of one main-encoder, a feedback of the auxiliary-encoder, and the anti-sway position command. Wherein, the master-driver controls one motor based on a speed command generated by the full closed-loop computation and the slave-driver follows the speed command and a torque command of the master-driver to drive another motor; or the two drivers compensate the torque command based on an error value between the feedback of one main-encoder and the feedback of the auxiliary-encoder.

Abstract: A method includes forming a dummy gate over a semiconductor fin; forming a source/drain epitaxial structure over the semiconductor fin and adjacent to the dummy gate; depositing an interlayer dielectric (ILD) layer to cover the source/drain epitaxial structure; replacing the dummy gate with a gate structure; forming a dielectric structure to cut the gate structure, wherein a portion of the dielectric structure is embedded in the ILD layer; recessing the portion of the dielectric structure embedded in the ILD layer; after recessing the portion of the dielectric structure, removing a portion of the ILD layer over the source/drain epitaxial structure; and forming a source/drain contact in the ILD layer and in contact with the portion of the dielectric structure.

Abstract: Embodiments of the present disclosure provide semiconductor device structures and methods of forming the same. The structure includes a first source/drain region disposed under a well portion, a second source/drain region disposed adjacent the first source/drain region, a dielectric material disposed between the first and second source/drain regions, and a conductive contact having a first portion disposed under the first source/drain region and a second portion disposed adjacent the first source/drain region. The second portion is disposed in the dielectric material. The structure further includes a conductive feature disposed in the dielectric material, and the conductive feature is electrically connected to the conductive contact. The conductive feature has a top surface that is substantially coplanar with a top surface of the well portion.

Abstract: A preparation method for a silver (Ag) and graphitic carbon nitride (g-C3N4) co-modified zinc oxide (ZnO) nanocomposite material using a polymer network gel method includes: dispersing zinc oxide, bulk graphitic carbon nitride, and a soluble silver salt in water to obtain a first solution; adding glucose, a complexing agent, a polymer monomer, and a cross-linking agent into the first solution to obtain a second solution; performing a heating reaction on the second solution to obtain a three-dimensional network wet gel; drying the three-dimensional network wet gel to obtain a dry gel, and calcining the dry gel to obtain the Ag and g-C3N4 co-modified ZnO nanocomposite material. The preparation method has advantages of low cost, short period and simple steps; and the prepared nanocomposite material can be simultaneously applied to photocatalytic degradation of organic dye pollutants and photoexcitation detection of nitrogen dioxide gas at room temperature.

Abstract: A semiconductor device with dual side source/drain (S/D) contact structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a superlattice structure on the fin structure, forming first and second S/D regions within the superlattice structure, forming a gate structure between the first and second S/D regions, forming first and second contact structures on first surfaces of the first and second S/D regions, and forming a third contact structure, on a second surface of the first S/D region, with a work function metal (WFM) silicide layer and a dual metal liner. The second surface is opposite to the first surface of the first S/D region and the WFM silicide layer has a work function value closer to a conduction band energy than a valence band energy of a material of the first S/D region.

Abstract: The present disclosure relates to a semiconductor device having a backside source/drain contact, and method for forming the device. The semiconductor device includes a source/drain feature having a top surface and a bottom surface, a first silicide layer formed in contact with the top surface of the source/drain feature, a first conductive feature formed on the first silicide layer, and a second conductive feature having a body portion and a first sidewall portion extending from the body portion, wherein the body portion is below the bottom surface of the source/drain feature, and the first sidewall portion is in contact with the first conductive feature.

Abstract: A device includes: a stack of semiconductor nanostructures; a gate structure wrapping around the semiconductor nanostructures, the gate structure extending in a first direction; a source/drain region abutting the gate structure and the stack in a second direction transverse the first direction; a contact structure on the source/drain region; a backside conductive trace under the stack, the backside conductive trace extending in the second direction; a first through via that extends vertically from the contact structure to a top surface of the backside dielectric layer; and a gate isolation structure that abuts the first through via in the second direction.

Abstract: A signal transmission device has an initial signal stabilization mechanism and includes a driver and a bypass circuit. The driver includes: a first current source circuit coupled between a high voltage terminal and a first node; a second current source circuit coupled between a low voltage terminal and a second node; and a driving circuit coupled between the first node and the second node. The driving circuit outputs an output signal according to a first bias voltage of the first node, a second bias voltage of the second node, and an input signal during a signal output operation. The bypass circuit is coupled between the first node and the second node. In the beginning of the signal output operation, the bypass circuit conducts a current from the first node to the second node to assist in establishing the first and second bias voltages and thereby stabilize the output signal.

Abstract: A semiconductor device includes a first dielectric layer, a stack of semiconductor layers disposed over the first dielectric layer, a gate structure wrapping around each of the semiconductor layers and extending lengthwise along a direction, and a dielectric fin structure and an isolation structure disposed on opposite sides of the stack of semiconductor layers and embedded in the gate structure. The dielectric fin structure has a first width along the direction smaller than a second width of the isolation structure along the direction. The isolation structure includes a second dielectric layer extending through the gate structure and the first dielectric layer, and a third dielectric layer extending through the first dielectric layer and disposed on a bottom surface of the gate structure and a sidewall of the first dielectric layer.

Abstract: The present disclosure relates to a semiconductor device with a hybrid fin-dielectric region. The semiconductor device includes a substrate, a source region and a drain region laterally separated by a hybrid fin-dielectric (HFD) region. A gate electrode is disposed above the HFD region and the HFD region includes a plurality of fins covered by a dielectric and separated from the source region and the drain region by the dielectric.

Abstract: A bone fixation system for bone repair, the system comprising a bone fixation plate with upper and lower surfaces and at least one opening formed on the upper and lower surfaces to form a passage extending from the upper surface to the lower surface to receive a bone screw. The passage is defined by one or more non-threaded inner walls extending from the upper surface to the lower surface. At interference portions, the passage has a width between the walls smaller than the diameter of the head of the bone screw to achieve interference between the head of the bone screw and the inner walls at interference portions to lock the bone screw within the passage upon its insertion into the passage at a variable angle of rotation relative to a longitudinal axis of the passage.

Abstract: Disclosed are an online vacuum degree detection system and method based on single-fiber laser-induced breakdown spectroscopy. In the system, a laser device generates laser that excites the laser through fiber induced breakdown spectroscopy; a fiber coupler couples and injects the laser; a single fiber is connected to the fiber coupler to transmit the laser; one end of an LIBS probe is connected to the single fiber, and the other end of the LIBS probe extends into a vacuum arc-extinguishing chamber; the laser is induced by the LIBS probe to generate plasma, and the plasma is subjected to self-emission imaging and enters the fiber coupler via the LIBS probe; a dichroscope is arranged on the fiber coupler to separate the laser from the plasma; a processor is connected to a camera and a spectrometer.

Abstract: Disclosed are an electromagnetic induction type magnetic energy collector based on capacitive energy storage and a power improvement method. A main energy acquisition coil is sleeved in a main circuit to collect magnetic field energy, and a detection coil is sleeved in the main circuit to generate a sinusoidal signal for detecting zero crossing of a primary current; a switch group S2 and a switch group S1 are alternately turned on and off, a first rectifier bridge is connected to the switch group S2 and the switch group S1, and a comparator circuit is connected to the detection coil to compare the sinusoidal signal and convert the sinusoidal signal into a zero-crossing square wave signal; and a control module is connected to the comparator circuit, determines the zero crossing of the primary current based on the zero-crossing square wave signal.

Abstract: The disclosure discloses an optical path system for detecting a vacuum degree of a vacuum switch and a method thereof.

Abstract: A pressure sensing element has an elastic porous substrate, an electrode, an upper protective layer, and a lower protective layer. The elastic porous substrate is provided with a piezoelectric layer on a surface of the elastic porous substrate. The electrode is formed on at least one of a top and a bottom of the elastic porous substrate. The upper protective layer and a lower protective layer are provided respectively above and below the elastic porous substrate. The elastic porous substrate has multiple holes arranged in regular and repetitive patterns including gyroidal structures, lattice structures or schwarz structures.

Abstract: The invention discloses a method for measuring a semiconductor gas sensor based on virtual alternating current impedance. The method comprises: combining measurement parameters of virtual measurement frequencies in a first predetermined range and virtual parallel capacitance values in a second predetermined range, and measuring gas with known concentrations at each characteristic quantity among nine characteristic quantities in the case of each combination; obtaining multiple characteristic values corresponding to the same gas concentration at each characteristic quantity after traversing all parameter combinations and all nine characteristic quantities; and selecting virtual measurement frequencies in a third range, virtual parallel capacitance values in a fourth range and one or several corresponding characteristic quantities as the finally selected measurement parameters for measuring the unknown gas concentration.

Abstract: The present invention discloses a measuring method for a semiconductor gas sensor based on alternating-current impedance. The method includes the steps: connecting the semiconductor gas sensor to a capacitor in parallel, connecting an alternating-current impedance measuring device to the semiconductor gas sensor and the capacitor, combining measuring parameters under measuring frequencies within a first preset range and parallel capacitance values within a second preset range, and measuring a gas with a known concentration according to each of nine features under each combination; traversing all parameter combinations and all the nine features to obtain a plurality of feature values corresponding to the same gas concentration under each feature; and selecting measuring frequencies within a third range, parallel capacitance values within a fourth range and a certain or several of the corresponding features as measuring parameters finally selected for measuring an unknown gas concentration.

Abstract: The present invention discloses a measuring method for a semiconductor gas sensor based on alternating-current impedance. The method includes the steps: connecting the semiconductor gas sensor to a capacitor in parallel, connecting an alternating-current impedance measuring device to the semiconductor gas sensor and the capacitor, combining measuring parameters under measuring frequencies within a first preset range and parallel capacitance values within a second preset range, and measuring a gas with a known concentration according to each of nine features under each combination; traversing all parameter combinations and all the nine features to obtain a plurality of feature values corresponding to the same gas concentration under each feature; and selecting measuring frequencies within a third range, parallel capacitance values within a fourth range and a certain or several of the corresponding features as measuring parameters finally selected for measuring an unknown gas concentration.

Abstract: The invention discloses a method for measuring a semiconductor gas sensor based on virtual alternating current impedance. The method comprises: combining measurement parameters of virtual measurement frequencies in a first predetermined range and virtual parallel capacitance values in a second predetermined range, and measuring gas with known concentrations at each characteristic quantity among nine characteristic quantities in the case of each combination; obtaining multiple characteristic values corresponding to the same gas concentration at each characteristic quantity after traversing all parameter combinations and all nine characteristic quantities; and selecting virtual measurement frequencies in a third range, virtual parallel capacitance values in a fourth range and one or several corresponding characteristic quantities as the finally selected measurement parameters for measuring the unknown gas concentration.

Abstract: A bone fixation system for bone repair, the system comprising a bone fixation plate with upper and lower surfaces and at least one opening formed on the upper and lower surfaces to form a passage extending from the upper surface to the lower surface to receive a bone screw. The passage is defined by one or more non-threaded inner walls extending from the upper surface to the lower surface. At interference portions, the passage has a width between the walls smaller than the diameter of the head of the bone screw to achieve interference between the head of the bone screw and the inner walls at interference portions to lock the bone screw within the passage upon its insertion into the passage at a variable angle of rotation relative to a longitudinal axis of the passage.