Abstract: A thin-film transistor (TFT) panel and a test method are disclosed. The TFT panel includes: m×n bonding pads, where m and n are both natural numbers greater than or equal to 1, and the m×n bonding pads are arranged correspondingly to and electrically connected to TFT units in a TFT active area; a TFT test area including m drive pads, n test pads, and m×n TFT devices, where the m×n TFT devices are divided into n groups, each of which includes m TFT devices. the m TFT devices in each group corresponding to and are electrically connected to the m drive pads and m bonding pads respectively, and the m TFT devices in each group are electrically connected to a same test pad of the n test pads. The m×n bonding pads that were originally bonded by pressure once are tested in m sessions.

Abstract: There is provided a method for implementing and regulating patterning of a graphene film by ultraviolet photo-oxidation, including: implementing patterning of a graphene film micron structure pattern by using a xenon lamp excimer ultraviolet photo-oxidation vacuum apparatus and a hard mask; 2: controlling oxygen excitons, by applying a non-uniform magnetic field on the surface of the graphene film in a vertical direction, to move toward the graphene film in a direction of a magnetic field, so as to enhance the directivity of etching to the graphene film in the vertical direction, thereby improving patterning quality of the graphene film with micron-structure; and (3) by adjusting the intensity and direction of the magnetic field moving direction of the oxygen excitons is controlled, and the shape of the etched pattern structure of the graphene film is controlled, and thus controlling the patterning of the graphene film may be achieved.

Abstract: There is provided a method for implementing and regulating patterning of a graphene film by ultraviolet photo-oxidation, including: implementing patterning of a graphene film micron structure pattern by using a xenon lamp excimer ultraviolet photo-oxidation vacuum apparatus and a hard mask; 2: controlling oxygen excitons, by applying a non-uniform magnetic field on the surface of the graphene film in a vertical direction, to move toward the graphene film in a direction of a magnetic field, so as to enhance the directivity of etching to the graphene film in the vertical direction, thereby improving patterning quality of the graphene film with micron-structure; and (3) by adjusting the intensity and direction of the magnetic field moving direction of the oxygen excitons is controlled, and the shape of the etched pattern structure of the graphene film is controlled, and thus controlling the patterning of the graphene film may be achieved.