Abstract: In some implementations, a memory device may receive a program command instructing the memory device to program host data to a word line associated with a memory. The memory device may determine a program erase cycle (PEC) count associated with the word line. The memory device may determine, based on the PEC count, a selected program scheme to be used to program the host data to the word line, wherein the selected program scheme is one of a single-fine program scheme or a multi-fine program scheme. The memory device may execute the program command by performing the selected program scheme.

Abstract: Methods, systems, and apparatuses include receiving a command directed to a portion of memory. A cycle number for the portion of memory is determined. A group to which the portion of memory belongs is determined. A bitline voltage is determined using the cycle number and the group. The command is executed using the bitline voltage.

Abstract: Techniques and apparatus for service-based transmit energy allocation are described. An example method that may be performed by a wireless communication device includes obtaining reserve information associated with services allocated to a set of antenna groups. Each antenna group is associated with at least one radio corresponding to at least one radio access technology (RAT). A reserve is determined for each radio, based at least in part on the reserve information, a set of services mapped to the radio, and a respective state associated with each of the set of services. A signal(s) is transmitted for at least one service using at least one radio associated with the at least one service and a transmit power determined based at least in part on a radio frequency (RF) exposure limit associated with the at least one radio and the reserve for the at least one radio.

Abstract: A memory socket includes a frame having a base portion and a side portion, and a push-eject locking mechanism in physical communication with the base portion and with the side portion. The push-eject locking mechanism to transition between an unlocked position and a locked position. The push-eject locking mechanism includes an eject bar component and a lever component. The weight of the eject bar component biases the push-eject locking mechanism towards the unlocked position. Based on a force being exerted on the lever component, the lever component pivots and transition the push-eject locking mechanism from the unlocked position to the locked position.

Abstract: A system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including: receiving a request to perform a read operation on a segment of the memory device; determining whether a temperature offset value of the segment satisfies a threshold criterion associated with a program erase cycle count of the segment; and responsive to determining that the temperature offset value satisfies the threshold criterion, performing a corrective read operation on the segment of the memory device, wherein a sense time parameter of the corrective read operation is modified according to the temperature offset value and the program erase cycle count.

Abstract: Control logic can perform operations including obtaining, for each dummy wordline of a set of dummy wordlines, a respective set of step-up voltage parameters, wherein each set of step-up voltage parameters includes a step ratio corresponding to the dummy wordline, and causing a bias voltage with respect to each dummy wordline of the set of dummy wordlines to be ramped to a respective program inhibit bias voltage in accordance with the respective set of step-up voltage parameters. Additionally or alternatively, control logic can perform memory operations including causing a bias voltage with respect to each dummy wordline to be ramped to a power supply voltage during a seed first sub-phase of a pre-programming phase, and maintaining the bias voltage of the first dummy wordline at a first dummy wordline seed voltage throughout a bitline setting sub-phase of the pre-programming phase.

Abstract: There are proposed methods, devices, and computer program products for feature management. In the method, a first event associated with a first and a second object, and a second event associated with the first and second events are obtained, and a type of the first event is different from a type of the second event. A first feature of the first object is determined based on a first encoder, and a second feature of the second object is determined based on a second encoder. The first encoder is updated based on the first and second features and the first and second events. With these implementations, multiple events are used in determining the encoder for extracting the feature, and thus the encoder may have better performance in accuracy and increase performance of downstream tasks.

Abstract: Techniques and apparatus for operating a wireless device pursuant to RF exposure compliance are provided. An example method generally includes: when an RFECS1 of the wireless device is in an online state, controlling, via the RFECS1, at least one of one or more first radios associated with a first RAT or one or more second radios associated with a second RAT, in compliance with an RF exposure limit and based on at least one of first RF exposure information associated with the one or more first radios or second RF exposure information associated with the one or more second radios; and when the RFECS1 is unavailable, controlling, via a second RF exposure control scheme, the one or more second radios associated with the second RAT in compliance with the RF exposure limit and based on third RF exposure information associated with the one or more second radios.

Abstract: Apparatuses, systems, and methods for applying a read voltage overdrive. One example apparatus can include an array of memory cells and a controller coupled to the array of memory cells, wherein the controller is configured to apply a pass voltage to a wordline in the array of memory cells, apply a read voltage to the wordline, and apply a read voltage overdrive greater than the read voltage and less than or equal to the pass voltage to the wordline.

Abstract: A memory device includes a memory array and control logic, operatively coupled with the memory array, to perform operations including identifying a plurality of wordlines at an initial voltage different from a pass-through voltage, and causing an early discharge sequence to be performed with respect to the plurality of wordlines. The early discharge sequence includes ramping at least a first set of wordlines of the plurality of wordlines from the initial voltage to a ramping voltage different from the pass-through voltage.

Abstract: Methods, systems, and apparatuses include receiving a command directed to a portion of memory. A cycle number for the portion of memory is determined. A group to which the portion of memory belongs is determined. A bitline voltage is determined using the cycle number and the group. The command is executed using the bitline voltage.

Abstract: Various embodiments provide for performing a memory operation, such as a memory block compaction operation or block folding or refresh operation, based on a temperature associated with a memory block of a memory device. For instance, some embodiments provide for techniques that can cause performance of a block compaction operation on a memory block at a temperature that is at least at or higher than a predetermined temperature value. Additionally, some embodiments provide for techniques that can cause performance of a block folding/refresh operation, at a temperature that is at or higher than the predetermined temperature value, on one or more blocks on which data was written at a temperature lower than the predetermined temperature value.

Abstract: An apparatus that includes a set of memory components of a memory sub-system is provided. The set of memory components include a first memory block comprising first units of linearly arranged memory cells and a second memory block comprising second units of linearly arranged memory cells. The set of memory components include a slit portion dividing the first and second memory blocks. The slit portion includes a capacitor in which a first metal portion of the capacitor is adjacent to the first units of linearly arranged memory cells and a second metal portion of the capacitor is adjacent to the second units of linearly arranged memory cells.

Abstract: A memory device includes a memory array and control logic, operatively coupled with the memory array, to perform operations including initiating a read recovery process associated with a block of the memory array. The block includes wordlines at an initial voltage. The operations further include causing an early discharge sequence to be performed on a first set of wordlines of the wordlines during the read recovery process to alleviate latent read disturb. The early discharge sequence includes ramping the first set of wordlines from the initial voltage to a ramping voltage while maintaining a second set of wordlines of the wordlines at the initial voltage.

Abstract: Various embodiments provide for performing a memory operation, such as a memory block compaction operation or block folding or refresh operation, based on a temperature associated with a memory block of a memory device. For instance, some embodiments provide for techniques that can cause performance of a block compaction operation on a memory block at a temperature that is at least at or higher than a predetermined temperature value. Additionally, some embodiments provide for techniques that can cause performance of a block folding/refresh operation, at a temperature that is at or higher than the predetermined temperature value, on one or more blocks on which data was written at a temperature lower than the predetermined temperature value.

Abstract: A system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including: receiving a request to perform a memory access operation on a set of cells associated with a wordline of the memory device; determining that the wordline is disposed on a first deck of the memory deck; responsive to determining that the wordline is disposed on the first deck, determining that the wordline is associated with a first group of wordlines associated with the first deck; and responsive to determining that the wordline is associated with the first group of wordlines associated with the first deck, performing the memory access operation on the set of cells connected to the wordline using a first time sense parameter, wherein the first time sense parameter corresponds to the first group of wordlines associated with the first deck.

Abstract: A processing path planning simulation device is provided, which includes a memory and a processor. The processor performs following operations: according to an obstacle model, multiple processing point positions, a mechanical arm model, a processing tool model, a model position relative relationship and a production strategy parameter, performing collision test simulation to generate multiple candidate poses of the mechanical arm model; performing path optimization algorithms on the multiple candidate poses to generate a pose sequence; performing an ant colony algorithm based on the pose sequence and the obstacle model to generate an optimal processing path; and based on the optimal processing path, simulating that an end point of the processing tool model on the mechanical arm model performs a virtual processing operation on the multiple processing point positions sequentially according to the multiple optimal nodes.

Abstract: A system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including: receiving a request to perform a memory access operation on a set of cells associated with a wordline of the memory device; determining that a temperature associated with the memory device satisfies a threshold criterion; determining a memory access operation type of the memory access operation; and performing the memory access operation on the set of cells associated with the wordline using a first time sense parameter, wherein the first time sense parameter corresponds to the memory access operation type and the temperature associated with the memory device.

Abstract: Methods, systems, and apparatuses include receiving a command directed to a portion of memory. A cycle number for the portion of memory is determined. A group to which the portion of memory belongs is determined. A sensing time is determined using the cycle number and the group. The command is executed using the sensing time.

Abstract: Apparatuses, systems, and methods for determining a dynamic erase voltage step. One example apparatus can include an array of memory cells and a controller coupled to the array of memory cells, wherein the controller is configured to apply a first erase voltage to a first wordline and a second wordline in the array of memory cells to perform an erase operation, apply a first verify voltage to the first wordline to verify the erase operation, apply a second verify voltage greater than the first verify voltage to the second wordline in response to failing to verify the erase operation by applying the first verify voltage to the first wordline, and apply a second erase voltage to the first wordline and the second wordline in response to verifying the erase operation by applying the second verify voltage to the second wordline.