Abstract: Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided herein. A semiconductor arrangement comprises a first channel region and a second channel region that are formed according to at least one of a vertical channel configuration or a dual channel configuration. The first channel region operates as a first channel between a source region and a drain region of the semiconductor arrangement. The second channel region operates as a second channel between the source region and the drain region. A gate region, formed between the first channel region and the second channel region, operates to control the first channel and the second channel. Performance of the semiconductor arrangement is improved, such as an increase in current, because two current paths between the source region and the drain region are provided by the two channels.

Abstract: A method of reliability testing of a semiconductor device is described. The embodiment, includes providing a capacitor including an insulating layer interposing two conductive layers. A plurality of voltages are provided to the capacitor including providing a first voltage and a second voltage greater than the first voltage. A leakage associated with the capacitor is measured while applying the second voltage. In an embodiment, the leakage measured while applying the second voltage indicates that a failure of the insulating layer of the capacitor has occurred. In an embodiment, the capacitor is an inter-digitated metal-oxide-metal (MOM) capacitor. The reliability testing may be correlated to TDDB test results. The reliability testing may be performed at a wafer-level.

Abstract: Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided herein. A semiconductor arrangement comprises a first channel region and a second channel region that are formed according to at least one of a vertical channel configuration or a dual channel configuration. The first channel region operates as a first channel between a source region and a drain region of the semiconductor arrangement. The second channel region operates as a second channel between the source region and the drain region. A gate region, formed between the first channel region and the second channel region, operates to control the first channel and the second channel. Performance of the semiconductor arrangement is improved, such as an increase in current, because two current paths between the source region and the drain region are provided by the two channels.

Abstract: A method of reliability testing of a semiconductor device is described. The embodiment, includes providing a capacitor including an insulating layer interposing two conductive layers. A plurality of voltages are provided to the capacitor including providing a first voltage and a second voltage greater than the first voltage. A leakage associated with the capacitor is measured while applying the second voltage. In an embodiment, the leakage measured while applying the second voltage indicates that a failure of the insulating layer of the capacitor has occurred. In an embodiment, the capacitor is an inter-digitated metal-oxide-metal (MOM) capacitor. The reliability testing may be correlated to TDDB test results. The reliability testing may be performed at a wafer-level.