Abstract: A self-drilling screw (10) having a head (20), a shaft (30) at least partially wearing a thread (35) and a drill point (40). The base material of the screw (10) including the drill point (40) is integrally manufactured from an austenitic 300 series steel with a surface hardness (uncoated) of 400-600 HV 0.3. The surface of the screw has a top coating of Zn—Ni with a Ni-content between 12-15% deposited on the austenitic base material. This self-drilling screw (10) is manufactured from a blank of raw austenite 300 series steel which is initially squeezed by cold forming to reduce its diameter in a first operation and, in following cold forming operations the head, the drill point and a thread are formed.

Abstract: A self-drilling screw (10) having a head (20), a shaft (30) at least partially wearing a thread (35) and a drill point (40). The base material of the screw (10) including the drill point (40) is integrally manufactured from an austenitic 300 series steel with a surface hardness (uncoated) of 400-600 HV 0.3. The surface of the screw has a top coating of Zn—Ni with a Ni-content between 12-15% deposited on the austenitic base material. This self-drilling screw (10) is manufactured from a blank of raw austenite 300 series steel which is initially squeezed by cold forming to reduce its diameter in a first operation and, in following cold forming operations the head, the drill point and a thread are formed.

Abstract: An interlocked bottom bracket bearing device is provided, including an axial tube, two bottom bracket bearing assemblies and two annular members. The axial tube includes a first end and a second end. Each said bottom bracket bearing assembly includes a small-diameter portion and a large-diameter portion. Said two small-diameter portions are respectively assembled to the first and second ends. A side of each said large-diameter portion is radially and annularly formed with a protruding flange. Said two annular members are respectively sleeved on said two large-diameter portions. The annular members are abutted against the protruding flanges. Wherein said two bottom bracket bearing assemblies are located on two opposite sides of the bottom bracket tube, the annular member is radially clamped and a portion of the annular member is axially clamped between the protruding flange and a side wall of bottom bracket tube.

Abstract: An interlocked bottom bracket bearing device is provided, including an axial tube, two bottom bracket bearing assemblies and two annular members. The axial tube includes a first end and a second end. Each said bottom bracket bearing assembly includes a small-diameter portion and a large-diameter portion. Said two small-diameter portions are respectively assembled to the first and second ends. A side of each said large-diameter portion is radially and annularly formed with a protruding flange. Said two annular members are respectively sleeved on said two large-diameter portions. The annular members are abutted against the protruding flanges. Wherein said two bottom bracket bearing assemblies are located on two opposite sides of the bottom bracket tube, the annular member is radially clamped and a portion of the annular member is axially clamped between the protruding flange and a side wall of bottom bracket tube.

Abstract: A method for pre-wetting a PP filter for filtering slurry and a PP filter package are provided. The method for pre-wetting the PP filter for filter slurry includes steps of: pre-wetting a PP filtering media of the PP filter and packaging the pre-wetted PP filter in a packaging member sealingly. A PP filter package includes a cartridge, a PP filtering media and a packaging member. The PP filtering media is disposed in the cartridge to form a PP filter. The PP filtering media is pre-wetted, and the PP filter is sealingly packaged in the packaging member.

Abstract: A light-emitting diode (LED) apparatus includes a thermoconductive substrate, a thermoconductive adhesive layer, an epitaxial layer, a current spreading layer and a micro- or nano-roughing structure. The thermoconductive adhesive layer is disposed on the thermoconductive substrate. The epitaxial layer is disposed opposite to the thermoconductive adhesive layer and has a first semiconductor layer, an active layer and a second semiconductor layer. The current spreading layer is disposed between the second semiconductor layer of the epitaxial layer and the thermoconductive adhesive layer. The micro- or nano-roughing structure is disposed on the first semiconductor layer of the epitaxial layer. In addition, a manufacturing method of the LED apparatus is also disclosed.

Abstract: A LED package structure includes a supporting substrate, a first electrically-conductive structure, a LED chip, an insulating layer and a second electrically-conductive structure. The supporting substrate includes a top surface, a bottom surface and a first channel. The first electrically-conductive structure is filled in the first channel and partially formed on the top and bottom surfaces of the supporting substrate. The LED chip is disposed over the supporting substrate. The insulating layer is formed over the supporting substrate and on bilateral sides of the LED chip. The insulating layer has a second channel corresponding to the first electrically-conductive structure. The second electrically-conductive structure is filled in the second channel and partially formed on the insulating layer, and connected with an electrode of the LED chip. The LED chip and the top and bottom surfaces of the supporting substrate are connected with each other through the first and second electrically-conductive structures.

Abstract: A light emitting diode (LED) device includes a stacked epitaxial structure, a heat-conductive plate and a seed layer. The stacked epitaxial structure sequentially includes a first semiconductor layer (N—GaN), a light emitting layer, and a second semiconductor layer (P—GaN). The heat-conductive plate is disposed on the first semiconductor layer, and the seed layer is disposed between the first semiconductor layer and the heat-conductive plate. Also, the present invention discloses a manufacturing method thereof including the steps of: forming at least one temporary substrate, which is made by a curable polymer material, on an LED device, and forming at least a heat-conductive plate on the LED device.

Abstract: A light-emitting diode (LED) apparatus includes a thermoconductive substrate, a thermoconductive adhesive layer, an epitaxial layer, a current spreading layer and a micro- or nano-roughing structure. The thermoconductive adhesive layer is disposed on the thermoconductive substrate. The epitaxial layer is disposed opposite to the thermoconductive adhesive layer and has a first semiconductor layer, an active layer and a second semiconductor layer. The current spreading layer is disposed between the second semiconductor layer of the epitaxial layer and the thermoconductive adhesive layer. The micro- or nano-roughing structure is disposed on the first semiconductor layer of the epitaxial layer. In addition, a manufacturing method of the LED apparatus is also disclosed.

Abstract: A LED light source in a single package for raising the color-rendering index is provided. The LED light source comprises a substrate, at least one covering layer, a primary light source, and a secondary light source. The primary and the secondary light sources are formed on the substrate and coated with the at least one covering layer to provide a first output light and a second output light, respectively. The total output light is a mixed color of the first output light and the second output light.

Abstract: A light emitting diode (LED) device includes a stacked epitaxial structure, a heat-conductive plate and a seed layer. The stacked epitaxial structure sequentially includes a first semiconductor layer (N—GaN), a light emitting layer, and a second semiconductor layer (P—GaN). The heat-conductive plate is disposed on the first semiconductor layer, and the seed layer is disposed between the first semiconductor layer and the heat-conductive plate. Also, the present invention discloses a manufacturing method thereof including the steps of: forming at least one temporary substrate, which is made by a curable polymer material, on an LED device, and forming at least a heat-conductive plate on the LED device.

Abstract: A light-emitting diode (LED) apparatus includes a thermoconductive substrate, a thermoconductive adhesive layer, an epitaxial layer, a current spreading layer and a micro- or nano-roughing structure. The thermoconductive adhesive layer is disposed on the thermoconductive substrate. The epitaxial layer is disposed opposite to the thermoconductive adhesive layer and has a first semiconductor layer, an active layer and a second semiconductor layer. The current spreading layer is disposed between the second semiconductor layer of the epitaxial layer and the thermoconductive adhesive layer. The micro- or nano-roughing structure is disposed on the first semiconductor layer of the epitaxial layer. In addition, a manufacturing method of the LED apparatus is also disclosed.

Abstract: An electroluminescent module includes a module substrate, a thermal-conducting carrier substrate and a light-emitting element. The module substrate has an opening, a first surface and a first patterned electrode disposed on the first surface. The thermal-conducting carrier substrate has a carrying element and a second patterned electrode disposed on the carrying element. The carrying element is disposed opposite to the first surface of the module substrate, and the second patterned electrode is disposed facing to the first patterned electrode and electrically connected to the first patterned electrode. The light-emitting element is located at the opening and disposed on the thermal-conducting carrier substrate. The light-emitting element has a first electrode and a second electrode, both of which are respectively electrically connected to the corresponding portions of the second patterned electrode of the thermal-conducting carrier substrate.

Abstract: A micro-electromechanical device includes a substrate, a first patterned conductive layer, a second patterned conductive layer and a first patterned blocking layer. The first patterned conductive layer is disposed on the substrate. The second patterned conductive layer is disposed on the first patterned conductive layer. The first patterned blocking layer is connected with the first patterned conductive layer and the second patterned conductive layer. In addition, a method of manufacturing the micro-electromechanical device is also disclosed.

Abstract: A light-emitting diode (LED) apparatus includes an epitaxial multilayer, a micro/nano rugged layer and an anti-reflection layer. The epitaxial multilayer has a first semiconductor layer, an active layer and a second semiconductor layer in sequence. The micro/nano rugged layer is disposed on the first semiconductor layer of the epitaxial multilayer. The anti-reflection layer is disposed on the micro/nano rugged layer. In addition, a manufacturing method of the LED apparatus is also disclosed.

Abstract: An electroluminescent device includes a conduction substrate, a reflection layer, a patterned transparent conduction layer, at least one light emitting diode (LED) element, a first contact electrode and a second contact electrode. The reflection layer is disposed on the conduction substrate, and the patterned transparent conduction layer is formed on the reflection layer. The LED element is formed on the patterned transparent conduction layer, and the LED element includes a first semiconductor layer, a light emitting layer and a second semiconductor layer in sequence. The second semiconductor layer is disposed on the patterned transparent conduction layer and the reflection layer. The first contact electrode is disposed at one side of the first semiconductor layer, and the second contact electrode is disposed at one side of the conduction substrate.

Abstract: A capacitance sensing structure includes a substrate, a sensing electrode layer, at least one stack layer and a conductive body. The sensing electrode layer is formed on or in the substrate. The stack layer is formed on the sensing electrode layer. The conductive body is disposed over and corresponding to the sensing electrode layer and the stack layer.

Abstract: A manufacturing method of a light emitting diode (LED) apparatus includes the steps of: forming at least one temporary substrate, which is made by a curable material, on a LED device; and forming at least a thermal-conductive substrate on the LED device. The manufacturing method does not need the step of adhering the semiconductor structure onto another substrate by using an adhering layer, and can make the devices to be in sequence separated after removing the temporary substrate, thereby obtaining several LED apparatuses. As a result, the problem of current leakage due to the cutting procedure can be prevented so as to reduce the production cost and increase the production yield.

Abstract: A smoke detecting method and device are provided. The smoke detecting method and device capture a plurality of images; determine one of the plurality of images as an analyzable image when the one of the plurality of images is identified to have a moving object; analyze a chrominance variation of the analyzable image; analyze at least one of an edge blur and a flickering frequency of the analyzable image; compare at least one of analyzed results from the analyzing steps with a corresponding predetermined feature; and determine the moving object is a smoke when at least one of the analyzed results conforms to the corresponding predetermined feature.

Abstract: A light-emitting diode device includes an epitaxial layer, a current blocking layer and a current spreading layer. The current blocking layer is disposed on one side of the epitaxial layer and contacts with a portion of the epitaxial layer. The current spreading layer is disposed on one side of the epitaxial layer and contacts with at least a portion of the current blocking layer.