Abstract: A reliability determination method, which is configured to test a batch of semiconductor devices, includes: obtaining a Welbull distribution of lifetime of the batch of semiconductor devices; dividing the Welbull distribution into at least a first section and a second section, wherein the first section and the second section meet a confidence interval; generating a first trend line of the first section and a second trend line of the second section according to the first confidence level, in which the first trend line has a first slope and the second trend line has a second slope; determining the first slope exceeds a second slope; and determining a predicted reliability of the batch of the semiconductor device under a target quality level according to the first section.

Abstract: A reliability determination method, which is configured to test a batch of semiconductor devices, includes: obtaining a Welbull distribution of lifetime of the batch of semiconductor devices; dividing the Welbull distribution into at least a first section and a second section, wherein the first section and the second section meet a confidence interval; generating a first trend line of the first section and a second trend line of the second section according to the first confidence level, in which the first trend line has a first slope and the second trend line has a second slope; determining the first slope exceeds a second slope; and determining a predicted reliability of the batch of the semiconductor device under a target quality level according to the first section.

Abstract: A Schottky diode device is provided, including a p-type semiconductor structure. An n drift region is disposed over the p-type semiconductor structure, wherein the n drift region comprises first and second n-type doping regions having different n-type doping concentrations, and the second n-type doping region is formed with a dopant concentration greater than that in the first n-type doping region. A plurality of isolation structures is disposed in the second n-type doping region of the n drift region, defining an anode region and a cathode region. A third n-type doping region is disposed in the second n-type doping region exposed by the cathode region. An anode electrode is disposed over the first n-type doping region in the anode region. A cathode electrode is disposed over the third n-type doping region in the cathode region.

Abstract: A Schottky diode device is provided, including a p-type semiconductor structure. An n drift region is disposed over the p-type semiconductor structure, wherein the n drift region comprises first and second n-type doping regions having different n-type doping concentrations, and the second n-type doping region is formed with a dopant concentration greater than that in the first n-type doping region. A plurality of isolation structures is disposed in the second n-type doping region of the n drift region, defining an anode region and a cathode region. A third n-type doping region is disposed in the second n-type doping region exposed by the cathode region. An anode electrode is disposed over the first n-type doping region in the anode region. A cathode electrode is disposed over the third n-type doping region in the cathode region.