Patents by Inventor Huang-Ming Lee

Huang-Ming Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating nanometer gate in semiconductor device using thermally reflowed resist technology
    Patent number: 6943068
    Abstract: The invention relates to a method for fabricating nanometer gate semiconductor device using thermally reflowed photoresist technology, comprising steps of (i) spin-coating two layers of photoresists on a substrate, where a bottom layer of photoresist is a polymeric photoresist having a lower sensitivity and a higher resolution, and a top layer of photoresist, is another polymeric photoresist having a higher sensitivity and a lower resolution, with respect to the electron beam; (ii) heating the photoresists for curing by way of using a hotplate; (iii) using photolithography in an electron beam direct writing manner to expose a pattern on the photoresists for forming a gate; (iv) using a developer and an etchant for developing and etching to form a recess on the gate; (v) plating a metallic layer on the recess of the gate using an electron gun evaporation technique; and (vi) removing the photoresists to obtain the gate, characterized in that after the etching of the recess of the gate, the photoresists are refl
    Type: Grant
    Filed: November 17, 2003
    Date of Patent: September 13, 2005
    Assignee: National Chiao Tung University
    Inventors: Edward Y. Chang, Huang-Ming Lee
  • Method for fabricating nanometer gate in semiconductor device using thermally reflowed resist technology
    Publication number: 20040229409
    Abstract: The invention relates to a method for fabricating nanometer gate semiconductor device using thermally reflowed photoresist technology, comprising steps of (i) spin-coating two layers of photoresists on a substrate, where a bottom layer of photoresist is a polymeric photoresist having a lower sensitivity and a higher resolution, and a top layer of photoresist, is another polymeric photoresist having a higher sensitivity and a lower resolution, with respect to the electron beam; (ii) heating the photoresists for curing by way of using a hotplate; (iii) using photolithography in an electron beam direct writing manner to expose a pattern on the photoresists for forming a gate; (iv) using a developer and an etchant for developing and etching to form a recess on the gate; (v) plating a metallic layer on the recess of the gate using an electron gun evaporation technique; and (vi) removing the photoresists to obtain the gate, characterized in that after the etching of the recess of the gate, the photoresists are refl
    Type: Application
    Filed: November 17, 2003
    Publication date: November 18, 2004
    Applicant: National Chiao Tung University
    Inventors: Edward Y. Chang, Huang-Ming Lee