Abstract: A spatial light modulator includes a panel and a driver board. The panel includes an ultra-high pixel density backplane and a liquid crystal layer. The ultra-high pixel density backplane includes a pixel array with at least 4000 PPI. The liquid crystal layer includes an ultra-high figure-of-merit liquid crystal material with a first figure-of-merit value. The driver board is connected to the panel for driving the panel by executing a fast panel driving procedure design to achieve low phase error.

Abstract: Provided is an electric field generating substrate and a liquid crystal lens containing the same. The electric field generating substrate contains: a first substrate; and a first electric field generating unit disposed on the first substrate. The first electric field generating unit contains: a first main electrode; a second main electrode; and a first sub-electrode disposed between the first main electrode and the second main electrode. The first sub-electrode electrically connects to the first main electrode and the second main electrode. A first resistor is disposed between the first main electrode and the first sub-electrode, and a second resistor is disposed between the first sub-electrode and the second main electrode. In addition, the first main electrode, the second main electrode and the first sub-electrode are substantially parallel to each other.

Abstract: A rotary cutting unit for a rotary saw has a cross bar and at least one cutting structure, wherein the cutting structure is in contact with the cross bar. The cross bar runs through sleeve holes. The center of gravity of the turning unit is located in an axis of the center of the sleeve holes. The axis is perpendicular to the transverse axis of the crossbar. The rotary saw selectively installs the rotary cutting unit of the corresponding specification, and it can quickly and easily change the aperture of the circular hole to be processed, and with high usability.

Abstract: A rotary cutting unit for a rotary saw has a cross bar and at least one cutting structure, wherein the cutting structure is in contact with the cross bar. The cross bar runs through sleeve holes. The center of gravity of the turning unit is located in an axis of the center of the sleeve holes. The axis is perpendicular to the transverse axis of the crossbar. The rotary saw selectively installs the rotary cutting unit of the corresponding specification, and it can quickly and easily change the aperture of the circular hole to be processed, and with high usability.

Abstract: An electronic device includes a casing and an electrical component. The casing includes a first casing body, a second casing body and a fastener. The second casing body is located on the first casing body, and the fastener detachably clamps a side of the first casing body and the second casing body. The electrical component is located between the first casing body and the second casing body.

Abstract: A method of generating an integrated circuit includes: receiving, by a processor, a first IC design layout; replacing, by the processor, a specific region in the first IC design layout with a first difference region; performing, by the processor, an inverse lithography technology process upon a junction region between the first difference region and the first IC design layout to generate a mask data; and causing the IC to be fabricated according to the mask data.

Abstract: A rotary cutting unit for a rotary saw has a cross bar and at least one cutting structure, wherein the cutting structure is in contact with the cross bar. The cross bar runs through sleeve holes. The center of gravity of the turning unit is located in an axis of the center of the sleeve holes. The axis is perpendicular to the transverse axis of the crossbar. The rotary saw selectively installs the rotary cutting unit of the corresponding specification, and it can quickly and easily change the aperture of the circular hole to be processed, and with high usability.

Abstract: Provided is an electric field generating substrate and a liquid crystal lens containing the same. The electric field generating substrate contains: a first substrate; and a first electric field generating unit disposed on the first substrate. The first electric field generating unit contains: a first main electrode; a second main electrode; and a first sub-electrode disposed between the first main electrode and the second main electrode. The first sub-electrode electrically connects to the first main electrode and the second main electrode. A first resistor is disposed between the first main electrode and the first sub-electrode, and a second resistor is disposed between the first sub-electrode and the second main electrode. In addition, the first main electrode, the second main electrode and the first sub-electrode are substantially parallel to each other.

Abstract: Various embodiments may provide an apparatus for maintaining a pressure different from atmospheric pressure. The apparatus may include a plurality of structural members coupled together to at least partially define a space which is configured to have a pressure different from atmospheric pressure, a structural member of the plurality of structural members being a support structure having an array of holes. The apparatus may also include a film covering a surface of the support structure having an array of holes. The film maybe adapted to allow a predetermined range of wavelengths of electromagnetic waves to pass through.

Abstract: A device includes a conductive layer including a bottom portion, and a sidewall portion over the bottom portion, wherein the sidewall portion is connected to an end of the bottom portion. An aluminum-containing layer overlaps the bottom portion of the conductive layer, wherein a top surface of the aluminum-containing layer is substantially level with a top edge of the sidewall portion of the conductive layer. An aluminum oxide layer is overlying the aluminum-containing layer. A copper-containing region is over the aluminum oxide layer, and is spaced apart from the aluminum-containing layer by the aluminum oxide layer. The copper-containing region is electrically coupled to the aluminum-containing layer through the top edge of the sidewall portion of the conductive layer.

Abstract: A wireless image processing system includes a splitter software and processing apparatus configured to receive or forward picture element data. Image data in a computer may be split, wirelessly transmitted, and processed to form an any size integrity image/video display on a building or structure, meanwhile no physical damage may be done on or to the building or no physical cabling obstacle for image or video dividing and combining at a lighting show.

Abstract: A device includes a conductive layer including a bottom portion, and a sidewall portion over the bottom portion, wherein the sidewall portion is connected to an end of the bottom portion. An aluminum-containing layer overlaps the bottom portion of the conductive layer, wherein a top surface of the aluminum-containing layer is substantially level with a top edge of the sidewall portion of the conductive layer. An aluminum oxide layer is overlying the aluminum-containing layer. A copper-containing region is over the aluminum oxide layer, and is spaced apart from the aluminum-containing layer by the aluminum oxide layer. The copper-containing region is electrically coupled to the aluminum-containing layer through the top edge of the sidewall portion of the conductive layer.

Abstract: Embodiments of the present disclosure may be used for patterning a layer in a 5 nm node or beyond fabrication to achieve an end-to-end distance below 35 nm. Compared to the state of the art technology, embodiments of the present disclosure reduce cycle time and cost of production from three lithographic processes and four etching processes to one lithographic process and three etch processes.

Abstract: A method includes forming an inter-layer dielectric over a first source/drain region and a second source/drain region. The first source/drain region and the second source/drain region are of n-type and p-type, respectively. The inter-layer dielectric is etched to form a first contact opening and a second contact opening, with the first source/drain region and the second source/drain region exposed to the first contact opening and the second contact opening, respectively. A process gas is used to etch back the first source/drain region and the second source/drain region simultaneously, and a first etching rate of the first source/drain region is higher than a second etching rate of the second source/drain region. A first silicide region and a second silicide region are formed on the first source/drain region and the second source/drain region, respectively.

Abstract: Embodiments of the present disclosure may be used for patterning a layer in a 5 nm node or beyond fabrication to achieve an end-to-end distance below 35 nm. Compared to the state of the art technology, embodiments of the present disclosure reduce cycle time and cost of production from three lithographic processes and four etching processes to one lithographic process and three etch processes.

Abstract: A method includes forming an inter-layer dielectric over a first source/drain region and a second source/drain region. The first source/drain region and the second source/drain region are of n-type and p-type, respectively. The inter-layer dielectric is etched to form a first contact opening and a second contact opening, with the first source/drain region and the second source/drain region exposed to the first contact opening and the second contact opening, respectively. A process gas is used to etch back the first source/drain region and the second source/drain region simultaneously, and a first etching rate of the first source/drain region is higher than a second etching rate of the second source/drain region. A first silicide region and a second silicide region are formed on the first source/drain region and the second source/drain region, respectively.

Abstract: A keyboard device includes a membrane circuit board, a key frame, a position-limiting frame and a key structure. The key frame is located over the membrane circuit board. The position-limiting frame is located over the key frame. The key frame includes a first frame body and a first receiving hole. The first receiving hole runs through the first frame body along a vertical direction. The position-limiting frame includes a second frame body and a second receiving hole. The second receiving hole runs through the second frame body along the vertical direction. The second receiving hole is in communication with the first receiving hole. The key structure includes a keycap and a protrusion part. The keycap is movable within the first receiving hole and the second receiving hole. A portion of the protrusion part is located under the second frame body.

Abstract: Present disclosure provide a method for fabricating a mask, including obtaining a target pattern to be imaged onto a substrate, providing a first scattering bar and a second scattering bar adjacent to consecutive edges of the target pattern, identifying a first length of the first scattering bar and a second length of the second scattering bar, connecting the first scattering bar and the second scattering bar when any of the first length and the second length is smaller than a predetermined value, identifying a separation between the first scattering bar and the second scattering bar subsequent to identifying the first length and the second length, disposing the first scattering bar and the second scattering bar in a first fashion when the separation is equal to zero, and disposing the first scattering bar and the second scattering bar in a second fashion when the separation is greater than zero.

Abstract: Embodiments of the present disclosure may be used for patterning a layer in a 5 nm node or beyond fabrication to achieve an end-to-end distance below 35 nm. Compared to the state of the art technology, embodiments of the present disclosure reduce cycle time and cost of production from three lithographic processes and four etching processes to one lithographic process and three etch processes.

Abstract: A method includes forming an inter-layer dielectric over a first source/drain region and a second source/drain region. The first source/drain region and the second source/drain region are of n-type and p-type, respectively. The inter-layer dielectric is etched to form a first contact opening and a second contact opening, with the first source/drain region and the second source/drain region exposed to the first contact opening and the second contact opening, respectively. A process gas is used to etch back the first source/drain region and the second source/drain region simultaneously, and a first etching rate of the first source/drain region is higher than a second etching rate of the second source/drain region. A first silicide region and a second silicide region are formed on the first source/drain region and the second source/drain region, respectively.