Abstract: An auxiliary feed-in mechanism comprises a base having two rails on two sides of the base respectively and a crossrod across two rails on another side of the base; a driving mechanism having a dynamic retractable rod and a chassis, one end of the dynamic retractable rod hinging with one side of the crossrod, another end of the dynamic retractable rod connecting to one side of the chassis, the chassis setting on two rails; a power mechanism setting under the chassis, a driving shaft of the power mechanism penetrating the chassis to expose above the chassis; a delivering mechanism having a frame and a plurality of rollers, the rollers setting side by side in the frame, the delivering mechanism setting above the chassis, a bottom of the frame connecting to the driving shaft, the auxiliary feed-in mechanism can increase the working efficiency of the examining mechanism.

Abstract: A method of forming a silicon nitride layer is provided. A deposition furnace having an outer tube, a wafer boat, a gas injector and a uniform gas injection apparatus is provided. The wafer boat is positioned within the outer tube for carrying a plurality of wafers. The gas injector is positioned between the outer tube and the wafer boat. Similarly, the uniform gas injection apparatus is positioned between the outer tube and the wafer boat. Gas injected into the uniform gas injection apparatus is uniformly distributed throughout the entire deposition furnace. To form a silicon nitride layer on each wafer, a silicon-containing gas is passed into the deposition furnace via the gas injector and a nitrogen-mixed carrier gas is passed into the deposition furnace via the uniform gas injection apparatus.

Abstract: A method of forming a silicon nitride layer is provided. A deposition furnace having an outer tube, a wafer boat, a gas injector and a uniform gas injection apparatus is provided. The wafer boat is positioned within the outer tube for carrying a plurality of wafers. The gas injector is positioned between the outer tube and the wafer boat. Similarly, the uniform gas injection apparatus is positioned between the outer tube and the wafer boat. Gas injected into the uniform gas injection apparatus is uniformly distributed throughout the entire deposition furnace. To form a silicon nitride layer on each wafer, a silicon-containing gas is passed into the deposition furnace via the gas injector and a nitrogen-mixed carrier gas is passed into the deposition furnace via the uniform gas injection apparatus.