Abstract: The present disclosure relates to a method for fabricating a semiconductor structure. The method includes providing a substrate with a gate structure, an insulating structure over the gate structure, and a S/D region; depositing a titanium silicide layer over the S/D region with a first chemical vapor deposition (CVD) process. The first CVD process includes a first hydrogen gas flow. The method also includes depositing a titanium nitride layer over the insulating structure with a second CVD process. The second CVD process includes a second hydrogen gas flow. The first and second CVD processes are performed in a single reaction chamber and a flow rate of the first hydrogen gas flow is higher than a flow rate of the second hydrogen gas flow.

Abstract: A flash memory card includes a top cover having multiple positioning ribs and multiple guiding blocks both formed on opposite side faces of the head portion, a bottom cover engaged with the top cover and having multiple arcuate plates formed on opposite side faces of the bottom cover to correspond to the L-shaped hooks, a mediate frame sandwiched between the top cover and the bottom cover and having multiple positioning cutouts and multiple L-shaped indents to correspond to the positioning ribs and the guiding blocks respectively. The rear portion of the mediate frame has multiple through holes to receive the L-shaped hooks so that the L-shaped hooks are able to engage with the corresponding arcuate plates after the top cover is moved in a first direction relative to the mediate frame to complete the assembly of the flash memory card.