Patents by Inventor Huang-wei PAN

Huang-wei PAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Non-diffusion type photodiode
    Patent number: 11699771
    Abstract: A non-diffusion type photodiode is described and has: a substrate, a buffer layer, a light absorption layer, an intermediate layer, and a multiplication/window layer. The buffer layer is disposed on the substrate. The light absorption layer is disposed on the buffer layer. The intermediate layer is disposed on the light absorption layer and has a first boundary, wherein the intermediate layer is an I-type semiconductor layer or a graded refractive index layer. The multiplication/window layer is disposed on the intermediate layer and has a second boundary, wherein in a top view, the first boundary surrounds the second boundary, and a distance between the first boundary and the second boundary is greater than or equal to 1 micrometer. The non-diffusion type photodiode can reduce generation of dark current.
    Type: Grant
    Filed: June 24, 2021
    Date of Patent: July 11, 2023
    Assignee: LANDMARK OPTOELECTRONICS CORPORATION
    Inventors: Huang-wei Pan, Hung-Wen Huang, Yung-Chao Chen, Yi-Hsiang Wang
  • NON-DIFFUSION TYPE PHOTODIODE
    Publication number: 20220336690
    Abstract: A non-diffusion type photodiode is described and has: a substrate, a buffer layer, a light absorption layer, an intermediate layer, and a multiplication/window layer. The buffer layer is disposed on the substrate. The light absorption layer is disposed on the buffer layer. The intermediate layer is disposed on the light absorption layer and has a first boundary, wherein the intermediate layer is an I-type semiconductor layer or a graded refractive index layer. The multiplication/window layer is disposed on the intermediate layer and has a second boundary, wherein in a top view, the first boundary surrounds the second boundary, and a distance between the first boundary and the second boundary is greater than or equal to 1 micrometer. The non-diffusion type photodiode can reduce generation of dark current.
    Type: Application
    Filed: June 24, 2021
    Publication date: October 20, 2022
    Inventors: Huang-wei PAN, Hung-Wen HUANG, Yung-Chao CHEN, Yi-Hsiang WANG