Patents by Inventor Huang Peng Zhang

Huang Peng Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11567701
    Abstract: A controller includes memory and a microcontroller coupled to the memory. The memory is configured to store a list of entries of data in Flash memory coupled to the controller. The microcontroller is configured to periodically update the list of entries based on data programmed into the Flash memory, and check the list of entries upon reading data from the Flash memory.
    Type: Grant
    Filed: April 21, 2021
    Date of Patent: January 31, 2023
    Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
    Inventors: Huang Peng Zhang, Xiang Fu, Qi Wang
  • Publication number: 20210240397
    Abstract: A controller includes memory and a microcontroller coupled to the memory. The memory is configured to store a list of entries of data in Flash memory coupled to the controller. The microcontroller is configured to periodically update the list of entries based on data programmed into the Flash memory, and check the list of entries upon reading data from the Flash memory.
    Type: Application
    Filed: April 21, 2021
    Publication date: August 5, 2021
    Inventors: Huang Peng Zhang, Xiang Fu, Qi Wang
  • Patent number: 11016705
    Abstract: An electronic apparatus including flash memory and a flash controller is provided. The flash controller is coupled to the flash memory and used to manage data access to the flash memory. The flash controller includes a timer, memory and a microcontroller coupled to the timer and the memory. The timer is used to generate clock interrupts. The memory is used to retain for a predetermined period of time a list of entries of data programmed into the flash memory. Upon each clock interrupt, the microcontroller is used to write an entry of data being programmed into the flash memory to update the list of entries.
    Type: Grant
    Filed: June 11, 2019
    Date of Patent: May 25, 2021
    Assignee: Yangtze Memory Technologies Co., Ltd.
    Inventors: Huang Peng Zhang, Xiang Fu, Qi Wang
  • Publication number: 20200348932
    Abstract: A memory control system includes a memory interface, a microcontroller, and a sequence processing unit. The memory interface circuit receives a memory operation command and generates a plurality of operation instructions according to the memory operation command. The microcontroller is coupled to the memory interface circuit . The microcontroller receives the plurality of operation instructions and generates a plurality of task instructions according a scheduling algorithm through a predetermined protocol. The sequence processing unit is coupled to the microcontroller. The sequence processing unit receives the plurality of task instructions through the predetermined protocol, and controls a plurality of circuits of a memory device according to the plurality of task instructions with at least one finite state machine of the sequence processing unit.
    Type: Application
    Filed: June 14, 2019
    Publication date: November 5, 2020
    Inventors: Huang Peng Zhang, XIANG FU, Qi Wang, Zhi Chao Du, Hua Min Cao, Xin Yun Huang, Wen Wen Dong, Shu Bing Xu
  • Publication number: 20200348885
    Abstract: An electronic apparatus including flash memory and a flash controller is provided. The flash controller is coupled to the flash memory and used to manage data access to the flash memory. The flash controller includes a timer, memory and a microcontroller coupled to the timer and the memory. The timer is used to generate clock interrupts. The memory is used to retain for a predetermined period of time a list of entries of data programmed into the flash memory. Upon each clock interrupt, the microcontroller is used to write an entry of data being programmed into the flash memory to update the list of entries.
    Type: Application
    Filed: June 11, 2019
    Publication date: November 5, 2020
    Inventors: Huang Peng Zhang, XIANG FU, Qi Wang
  • Patent number: 10720442
    Abstract: Methods and structures of a three-dimensional memory device are disclosed. In an example, the memory device includes a plurality vertical memory strings disposed through an alternating conductor/dielectric stack. Each of the memory strings includes a composite dielectric layers and a TFET semiconductor layer. The TFET semiconductor layer includes an n-type semiconductor layer and a p-type semiconductor layer.
    Type: Grant
    Filed: July 26, 2018
    Date of Patent: July 21, 2020
    Assignee: Yangtze Memory Technologies Co., Ltd.
    Inventors: Xin Yun Huang, Qi Wang, Xiang Fu, Zhiliang Xia, Huang Peng Zhang, Hua Min Cao
  • Publication number: 20190081068
    Abstract: Methods and structures of a three-dimensional memory device are disclosed. In an example, the memory device includes a plurality vertical memory strings disposed through an alternating conductor/dielectric stack. Each of the memory strings includes a composite dielectric layers and a TFET semiconductor layer. The TFET semiconductor layer includes an n-type semiconductor layer and a p-type semiconductor layer.
    Type: Application
    Filed: July 26, 2018
    Publication date: March 14, 2019
    Applicant: Yangtze Memory Technologies Co., Ltd.
    Inventors: Xin Yun HUANG, Qi Wang, Xiang Fu, Zhiliang Xia, Huang Peng Zhang, Hua Min Cao