Abstract: A light-emitting diode includes an epitaxial structure and a first metal electrode. The epitaxial structure has a first surface and a second surface opposite thereto, and includes a first-type semiconductor layer, a light-emitting layer and a second-type semiconductor layer. The first-type semiconductor layer includes an ohmic contact layer which at least partially defines the first surface. The first metal electrode is disposed on the first surface, and includes a main electrode and auxiliary electrodes which are disposed on and electrically connected to the ohmic contact layer. The ohmic contact layer is made of AlxGayInP, where 0?x?1 or 0?y?1. In a top view of the light-emitting layer, a projection of each auxiliary electrode on the first surface is smaller than or equal to that of the ohmic contact layer on the first surface. A light-emitting divide including the light-emitting diode, and a method for manufacturing the light-emitting diode are also provided.

Abstract: A light-emitting device includes: an epitaxial structure that has a first surface and a second surface; a first metal electrode that is disposed on the first surface, and that includes a main electrode and extending electrodes; current transmission blocks that are disposed on the second surface, and each having an electrode-facing sidewall and a non-electrode-facing sidewall; and a current blocking layer that is disposed in spaces among the current transmission blocks.

Abstract: The light-emitting device includes a substrate, a light-emitting chip unit formed on the substrate and including multiple chips, an isolation groove extending in a first direction and separating two adjacent ones of the chips, and a bridging structure. The isolation groove is defined by a bottom and two sidewalls and has a first groove section and a second groove section arranged in the first direction. The first groove section has a width in a width direction perpendicular to the first direction that is greater than a width of the second groove section in the width direction. At the first groove section, one of the sidewalls has a curved portion. The bridging structure is formed on the bottom and the sidewalls, covers the curved portion, and electrically connects the two adjacent ones of the chips.

Abstract: A light-emitting device includes an epitaxial structure having a first surface and a second surface that is opposite to the first surface. The epitaxial structure includes, along a first direction from the first surface to the surface, a first-type semiconductor layer, an active layer, and a second-type semiconductor layer including a capping layer. The capping layer includes at least Ni number of sub-layers arranged in the first direction, where N1?2. Each of the sub-layers of the capping layer contains a material represented by Aly1Ga1-y1InP, where 0<y1?1. The capping layer has an Al content which increases and then remains constant along the first direction. A light-emitting apparatus includes the light-emitting device is also provided.

Abstract: A light-emitting device includes a semiconductor structure, a through hole, an electrical connecting structure, and a first electrode metal layer. The semiconductor structure has a first surface and a second surface, and includes a first-type semiconductor layer, a second-type semiconductor layer, and an active layer. The first surface is located on the first-type semiconductor layer, and the second surface is located on the second-type semiconductor layer. The through hole passes through the first-type semiconductor layer, the second-type semiconductor layer, and the active layer. The through hole has a first section, and the first-type semiconductor layer is exposed through the first section to electrically connect with the electrical connecting structure. A first angle between a side wall of the first type semiconductor layer that bounds the first section and the plane of the first surface ranges from 0° to 90°.

Abstract: A light emitting assembly includes a micro-LED, and a supporting substrate, The micro-LED includes a semiconductor structure and a first insulating dielectric layer. The semiconductor structure includes a first-type semiconductor laver; second-type semiconductor layer, and has a first mesa surface defined by the first-type semiconductor layer, and a second mesa surface defined by the second-type semiconductor layer, The first insulating dielectric layer covers the first and second mesa surfaces and has a first mesa covering portion that covers the first mesa surface, and two bridging arms projecting from the first mesa covering portion. The two bridging arms are located on two opposite sides of the semiconductor structure and connect with the supporting substrate so that the micro-LED is supported by the supporting substrate. The two bridging arms have a thickness which is less than a thickness of the first mesa covering portion on the first mesa surface.

Abstract: A flip-chip light-emitting diode includes a first conductivity type semiconductor layer, a light-emitting layer, a second conductivity type semiconductor layer, a first transparent dielectric layer, a second transparent dielectric layer, and a distributed Bragg reflector (DBR) structure which are sequentially stacked. The first transparent dielectric layer has a thickness greater than ?/2n1, and the second transparent dielectric layer has a thickness of m?/4n2, wherein m is an odd number, ? is an emission wavelength of the light-emitting layer, n1 is a refractive index of the first transparent dielectric layer, and n2 is a refractive index of the second transparent dielectric layer and is greater than n1.

Abstract: A light-emitting component includes a light-emitting unit and an electrically insulating layer. The light-emitting unit includes a first semiconductor layer, an active layer, and a second semiconductor layer, which are stacked on one another along a stacking direction in such order. The second semiconductor has a lower surface distal from the active layer. The electrically insulating layer is disposed to cover a first portion and to expose a second portion of the lower surface of the second semiconductor layer. A fluorine-containing region is formed in the second semiconductor layer. Methods for making the light-emitting component are also disclosed.

Abstract: Provided are a light-emitting diode and a manufacturing method thereof, comprising: a luminescent epitaxial layer, comprising a first semiconductor layer (110), a light-emitting layer (120) and a second semiconductor layer (130) from bottom to top in sequence; a transparent dielectric layer (200), at least formed on the second semiconductor layer (130), the transparent dielectric layer (200) has a platform (210) and a series of openings (220); the transparent dielectric layer (200) has an ohmic contact layer (310) in the opening (220), a transition layer (320) is provided between the ohmic contact layer (310) and the second semiconductor layer (130).

Abstract: A light emitting diode includes a segmented quantum well formed via selective growth method to avoid re-absorption effect of photons in the LED internal quantum well. This improves external extraction efficiency and increases luminance. The light emitting diode includes a first semiconductor layer, an active layer, and a second semiconductor layer, wherein, the upper surface of the first semiconductor layer has a first growth region and a second growth region; the active layer is formed only in the first growth region via selective epitaxial growth; and the second semiconductor layer covers the active layer and the second growth region of the first semiconductor layer via epitaxial growth.

Abstract: A light emitting diode includes a segmented quantum well formed via selective growth method to avoid re-absorption effect of photons in the LED internal quantum well. This improves external extraction efficiency and increases luminance. The light emitting diode includes a first semiconductor layer, an active layer, and a second semiconductor layer, wherein, the upper surface of the first semiconductor layer has a first growth region and a second growth region; the active layer is formed only in the first growth region via selective epitaxial growth; and the second semiconductor layer covers the active layer and the second growth region of the first semiconductor layer via epitaxial growth.