Abstract: Disclosed herein is an ion selective separation membrane including: a metal organic framework layer formed on, in, and/or around a substrate, the metal organic framework having a crystal structure that includes a first surface and a second surface and includes ion transport channels formed between respective pore windows in the first surface and the second surface; first and second electrodes to apply a potential difference across the membrane; wherein the respective pore windows have a pore size that is less than the hydrated diameter of the ion for which the ion selective separation membrane is selective.

Abstract: The disclosure relates to a membrane and method for its manufacture, the method including the steps of providing of an ultrafiltration membrane, and modification of the resultant ultrafiltration membrane to provide an asymmetric porous ion exchange membrane. The modification of the ultrafiltration membrane is typically carried out by exposing said ultrafiltration membrane to a first functional reagent to provide a cross-linked ultrafiltration membrane, and then exposing said cross-lined ultrafiltration membrane to a second functional reagent to introduce positive charged groups to produce an anion exchange membrane.

Abstract: The invention relates to a membrane, and method of manufacture of a membrane for reverse osmosis having a porous substrate, and a layer adjacent the porous substrate comprising a two dimensional nanosheet material and crosslinked polymer. The two dimensional nanosheet material is preferably chosen from the group comprising graphene oxide including reduced graphene oxide, holey graphene, holey graphene oxide, laminated graphene oxide and holey reduced graphene oxide.

Abstract: Disclosed herein is an ion selective separation membrane including: a metal organic framework layer formed on, in, and/or around a substrate, the metal organic framework having a crystal structure that includes a first surface and a second surface and includes ion transport channels formed between respective pore windows in the first surface and the second surface; first and second electrodes to apply a potential difference across the membrane; wherein the respective pore windows have a pore size that is less than the hydrated diameter of the ion for which the ion selective separation membrane is selective.

Abstract: A hydrogel composite draw material for forward osmosis comprising: a porous elastic polymeric foam element including a three-dimensional continuous network of pores interpenetrated with a polymer hydrogel. In use, the hydrogel composite draw material draws a water flux of at least 3.5 L/m2h.

Abstract: The invention relates to a membrane, and method of manufacture of a membrane for reverse osmosis having a porous substrate, and a layer adjacent the porous substrate comprising a two dimensional nanosheet material and crosslinked polymer. The two dimensional nanosheet material is preferably chosen from the group comprising graphene oxide including reduced graphene oxide, holey graphene, holey graphene oxide, laminated graphene oxide and holey reduced graphene oxide.

Abstract: A hydrogel composite draw material for forward osmosis comprising: a porous elastic polymeric foam element including a three-dimensional continuous network of pores interpenetrated with a polymer hydrogel. In use, the hydrogel composite draw material draws a water flux of at least 3.5 L/m2h.

Abstract: The invention relates to a membrane and method for its manufacture, the method including the steps of (1) providing of an ultrafiltration membrane, and (2) modification of the resultant ultrafiltration membrane to provide an asymmetric porous ion exchange membrane. The modification of the ultrafiltration membrane is typically carried out by (i) exposing said ultrafiltration membrane to a first functional reagent to provide a cross-linked ultrafiltration membrane, and then (ii) exposing said cross-lined ultrafiltration membrane to a second functional reagent to introduce positive charged groups to produce an anion exchange membrane.

Abstract: An ultrafiltration membrane comprising: (i) a first polymer, and (ii) a second, charged polymer wherein the first polymer and second polymer have different hydrophobicities.

Abstract: The present invention provides a polymer composite membrane having a polymer membrane and a poly(furfuryl alcohol) filling internal pores of the polymer membrane. The polymer composite membrane can have a high proton conductivity and/or a reduced methanol permeability and can be used in fuel cells, electrochemical sensor, and the like. The present invention also provides a method of making a polymer composite membrane, by providing a perfluorosulfonic polymer member, subjecting the perfluorosulfonic polymer member to a furan-based monomer, and polymerizing the furan-based monomer to obtain a polymer composite membrane having a high proton conductivity and/or a reduced methanol permeability.

Abstract: The present invention provides a polymer composite membrane having a polymer membrane and a poly(furfuryl alcohol) filling internal pores of the polymer membrane. The polymer composite membrane can have a high proton conductivity and/or a reduced methanol permeability and can be used in fuel cells, electrochemical sensor, and the like. The present invention also provides a method of making a polymer composite membrane, by providing a perfluorosulfonic polymer member, subjecting the perfluorosulfonic polymer member to a furan-based monomer, and polymerizing the furan-based monomer to obtain a polymer composite membrane having a high proton conductivity and/or a reduced methanol permeability.

Abstract: Thin films for use as dielectric in semiconductor and other devices are prepared from silica zeolites, preferably pure silica zeolites such as pure-silica MFI. The films have low k values, generally below about 2.7, ranging downwards to k values below 2.2. The films have relatively uniform pore distribution, good mechanical strength and adhesion, are relatively little affected by moisture, and are thermally stable. The films may be produced from a starting zeolite synthesis or precursor composition containing a silica source and an organic zeolite structure-directing agent such as a quaternary ammonium hydroxide. In one process the films are produced from the synthesis composition by in-situ crystallization on a substrate. In another process, the films are produced by spin-coating, either through production of a suspension of zeolite crystals followed by redispersion or by using an excess of the alkanol produced in preparing the synthesis composition.

Abstract: Thin films for use as dielectric in semiconductor and other devices are prepared from silica zeolites, preferably pure silica zeolites such as pure-silica MFI. The films have low k values, generally below about 2.7, ranging downwards to k values below 2.2. The films have relatively uniform pore distribution, good mechanical strength and adhesion, are relatively little affected by moisture, and are thermally stable. The films may be produced from a starting zeolite synthesis or precursor composition containing a silica source and an organic zeolite structure-directing agent such as a quaternary ammonium hydroxide. In one process the films are produced from the synthesis composition by in-situ crystallization on a substrate. In another process, the films are produced by spin-coating, either through production of a suspension of zeolite crystals followed by redispersion or by using an excess of the alkanol produced in preparing the synthesis composition.

Abstract: Thin films for use as dielectric in semiconductor and other devices are prepared from silica zeolites, preferably pure silica zeolites such as pure-silica MFI. The films have low k values, generally below about 2.7, ranging downwards to k values below 2.2. The films have relatively uniform pore distribution, good mechanical strength and adhesion, are relatively little affected by moisture, and are thermally stable. The films may be produced from a starting zeolite synthesis or precursor composition containing a silica source and an organic zeolite structure-directing agent such as a quaternary ammonium hydroxide. In one process the films are produced from the synthesis composition by in-situ crystallization on a substrate. In another process, the films are produced by spin-coating, either through production of a suspension of zeolite crystals followed by redispersion or by using an excess of the alkanol produced in preparing the synthesis composition.

Abstract: Thin films for use as dielectric in semiconductor and other devices are prepared from silica zeolites, preferably pure silica zeolites such as pure-silica MFI. The films have low k values, generally below about 2.7, ranging downwards to k values below 2.2. The films have relatively uniform pore distribution, good mechanical strength and adhesion, are relatively little affected by moisture, and are thermally stable. The films may be produced from a starting zeolite synthesis or precursor composition containing a silica source and an organic zeolite structure-directing agent such as a quaternary ammonium hydroxide. In one process the films are produced from the synthesis composition by in-situ crystallization on a substrate. In another process, the films are produced by spin-coating, either through production of a suspension of zeolite crystals followed by redispersion or by using an excess of the alkanol produced in preparing the synthesis composition.