Patents by Inventor Huanyun Zhang

Huanyun Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11075121
    Abstract: A method for fabricating a semiconductor device includes forming an initial fin structure on a semiconductor substrate; and forming a plurality of first dummy gate structures and a second dummy gate structure across the initial fin structure. The second dummy gate structure is formed between two adjacent first dummy gate structures, and includes a second dummy-gate-structure body. The method also includes forming a trench in the initial fin structure by etching and removing the second dummy-gate-structure body and a portion of the initial fin structure under the second dummy-gate-structure body. The trench divides the initial fin structure to form two fin structures. The method further includes forming a trench isolation layer in the trench and an interlayer dielectric layer on the plurality of first dummy gate structures. The interlayer dielectric layer covers a portion of the semiconductor substrate and the two fin structures adjacent to the trench.
    Type: Grant
    Filed: September 3, 2019
    Date of Patent: July 27, 2021
    Assignees: Semiconductor Manufacturing International (Beijing) Corporation, Semiconductor Manufacturing International (Shanghai) Corporation
    Inventors: Huanyun Zhang, Jian Wu
  • Publication number: 20200105607
    Abstract: A method for fabricating a semiconductor device includes forming an initial fin structure on a semiconductor substrate; and forming a plurality of first dummy gate structures and a second dummy gate structure across the initial fin structure. The second dummy gate structure is formed between two adjacent first dummy gate structures, and includes a second dummy-gate-structure body. The method also includes forming a trench in the initial fin structure by etching and removing the second dummy-gate-structure body and a portion of the initial fin structure under the second dummy-gate-structure body. The trench divides the initial fin structure to form two fin structures. The method further includes forming a trench isolation layer in the trench and an interlayer dielectric layer on the plurality of first dummy gate structures. The interlayer dielectric layer covers a portion of the semiconductor substrate and the two fin structures adjacent to the trench.
    Type: Application
    Filed: September 3, 2019
    Publication date: April 2, 2020
    Inventors: Huanyun ZHANG, Jian WU
  • Publication number: 20090046452
    Abstract: A disposable gas lighter with advertising flashlight. The lighter has a flashlight unit having a power source, a lamp electrically connected to the power source, a push-button switch to turn on the lamp when pressed down, a sleeve installed in a recess of the body which contains the lamp in one end thereof, a film bearing advertising information and placed in around a middle portion of the sleeve, and a convex contained in a free end of the sleeve. The convex is located in an opening defined on the surface of the body. When the push-button switch is pressed down, the flashlight unit is able to give off a light beam. When the beam meets a plane in front of the gas lighter, a project of the film comes into being. Viewers then are able to watch the advertising information of the film with the project.
    Type: Application
    Filed: August 14, 2007
    Publication date: February 19, 2009
    Inventors: Xinhua Huang, Zhi Hu, Huanyun Zhang