Abstract: An intelligent production line for turning tool bit cavities and an application method are provided, which solve the problem that a production line in the prior art has low working efficiency. The intelligent production line has the beneficial effects of a compact arrangement structure, higher safety and improved working efficiency. The intelligent production line for turning tool bit cavities includes a robot. Material tables and at least one machining center are arranged around the robot. A transfer station used for transferring materials is arranged between the machining center and the robot. A protective fence is arranged between a position above the material tables and the robot, and between the transfer station and the robot. The robot is provided with a mechanical arm including a base plate. The base plate is provided with at least one clamping jaw and fixed with a laser detecting unit for detecting the materials.

Abstract: A titanium-based composite catalyst for polyester synthesis, preparation method and application thereof are provided. The preparation method is: preparing a titanium-silicon catalyst precursor first, adding the titanium-silicon catalyst precursor to a biochar material in a certain mass ratio and mixing evenly, and aging, drying, calcining and wet grinding to obtain a titanium-silicon composite catalyst, and then mixing the titanium-silicon composite catalyst and a phosphate ester with a mass ratio of 1:(0.001-0.5) to obtain the titanium-based composite catalyst. The titanium-based composite catalyst is composed of the phosphate ester and the titanium-silicon composite catalyst, wherein the phosphate ester is adsorbed and wrapped on the surface of the titanium-silicon composite catalyst; the phosphate ester is combined with a titanium-silicon catalyst in the titanium-silicon composite catalyst by van der Waals force.

Abstract: The invention pertains to a mobile intelligent terminal with emergency charging function. The terminal comprises a smartphone and an emergency power generating assembly cooperating with the smartphone; the emergency power generating assembly includes an induction coil and a first magnet reciprocating relative to the induction coil, the first magnet moves relative to the induction coil to cut the magnetic induction lines of the first magnet, the induction coil is used to charge a lithium battery of the smartphone. By shaking the smartphone, the first magnet moves relative to the induction coil, making the induction coil to cut the magnetic induction lines of the first magnet to generate an electromotive force, achieving energy conversion and transmission. By rotating the driving assembly, it is able to generate power for temporary calls or location service when there is no power bank or external power supply, thus the present invention has strong practicality.

Abstract: A method for preparing a cationic dyeable flame-retardant high-strength polyester fiber is provided, after mixing oligomer A, oligomer B, and ethylene terephthalate and carrying out a polycondensation reaction to obtain a cationic dyeable flame-retardant polyester masterbatch, adding the cationic dyeable flame-retardant polyester masterbatch to the polyester chips according to a certain ratio for melt spinning, to prepare the cationic dyeable flame-retardant high-strength polyester fiber; oligomer A is prepared by the esterification reaction of a phosphorus flame retardant and a diol; oligomer B is prepared by the esterification reaction of sodium isophthalate sulfonate and a diol; the ratio of the sum of the molar weight of oligomer A and oligomer B to the molar weight of ethylene terephthalate is 3:7-6:4.

Abstract: A method for extracting and enriching gold with a selenide includes: mixing an isocyanate and a selenium-containing compound of a formula of HO—R—Se—R—OH in a solvent to obtain a mixture system, where R is selected from linear or branched C2 to C11 alkylene groups; adding a tin-based catalyst into the mixture system to activate a reaction, drying the mixture system after the reaction, and obtaining a powdery selenium-containing polymer by grinding; immersing the selenium-containing polymer in an aqueous solution containing gold ions to allow gold to be extracted from the aqueous solution; and removing the selenium-containing polymer attached to a surface of extracted gold, thereby obtaining an extracted and enriched gold.

Abstract: A method for extracting and enriching gold with a selenide includes: mixing an isocyanate and a selenium-containing compound of a formula of HO—R—Se—R—OH in a solvent to obtain a mixture system, where R is selected from linear or branched C2 to C11 alkylene groups; adding a tin-based catalyst into the mixture system to activate a reaction, drying the mixture system after the reaction, and obtaining a powdery selenium-containing polymer by grinding; immersing the selenium-containing polymer in an aqueous solution containing gold ions to allow gold to be extracted from the aqueous solution; and removing the selenium-containing polymer attached to a surface of extracted gold, thereby obtaining an extracted and enriched gold.

Abstract: An orthogonal gate extended drain MOSFET (EDMOS) structure provides a low gate-to-drain capacitance (CGD) and exhibits increased reliability. It has a gate electrode that is folded into the shallow trench isolation (STI) oxide region. Horizontal and vertical gate electrode segments provide gate control. It accommodates both high voltage devices and standard CMOS components on the same substrate. Reduced surface field (RESURF) technology is employed to optimize tradeoffs between high breakdown voltage and specific on-resistance. Device fabrication steps are compatible with standard CMOS flow and process modules can be added or removed from baseline CMOS technology.

Abstract: An orthogonal gate extended drain MOSFET (EDMOS) structure provides a low gate-to-drain capacitance (CGD) and exhibits increased reliability. It has a gate electrode that is folded into the shallow trench isolation (STI) oxide region. Horizontal and vertical gate electrode segments provide gate control. It accommodates both high voltage devices and standard CMOS components on the same substrate. Reduced surface field (RESURF) technology is employed to optimize tradeoffs between high breakdown voltage and specific on-resistance. Device fabrication steps are compatible with standard CMOS flow and process modules can be added or removed from baseline CMOS technology.