Patents by Inventor Huapu Pan
Huapu Pan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10197733Abstract: An edge coupling device including a substrate, a buried oxide disposed over the substrate, a cladding material disposed over the buried oxide, where the cladding material includes a trench, an inversely tapered silicon waveguide disposed within the cladding material beneath the trench, and a ridge waveguide disposed within the trench, where the ridge waveguide and the inversely tapered silicon waveguide are vertically-aligned with each other.Type: GrantFiled: April 19, 2017Date of Patent: February 5, 2019Assignee: Futurewei Technologies, Inc.Inventors: Huapu Pan, Zongrong Liu, Hongzhen Wei, Hongmin Chen
-
Patent number: 10120135Abstract: An apparatus comprises a substrate comprising a silicon dioxide (SiO2) material disposed on top of the substrate, a silicon waveguide comprising a first adiabatic tapering and enclosed in the silicon dioxide material, and a low-index waveguide disposed on top of the substrate and adjacent to the first adiabatic tapering. A mode converter fabrication method comprises obtaining a mode converter comprising a substrate, a silicon waveguide disposed on the substrate and comprising a sidewall and a first adiabatic tapering, and a hard mask disposed on the silicon waveguide and comprising a silicon dioxide layer, wherein the hard mask does not cover the sidewall, and oxidizing the silicon waveguide and the hard mask, wherein oxidizing the silicon waveguide and the hard mask encloses the silicon waveguide within the silicon dioxide layer.Type: GrantFiled: June 5, 2017Date of Patent: November 6, 2018Assignee: Futurewei Technologies, Inc.Inventors: Li Yang, Huapu Pan, Qianfan Xu, Dawei Zheng, Xiao Shen
-
Publication number: 20170269302Abstract: An apparatus comprises a substrate comprising a silicon dioxide (SiO2) material disposed on top of the substrate, a silicon waveguide comprising a first adiabatic tapering and enclosed in the silicon dioxide material, and a low-index waveguide disposed on top of the substrate and adjacent to the first adiabatic tapering. A mode converter fabrication method comprises obtaining a mode converter comprising a substrate, a silicon waveguide disposed on the substrate and comprising a sidewall and a first adiabatic tapering, and a hard mask disposed on the silicon waveguide and comprising a silicon dioxide layer, wherein the hard mask does not cover the sidewall, and oxidizing the silicon waveguide and the hard mask, wherein oxidizing the silicon waveguide and the hard mask encloses the silicon waveguide within the silicon dioxide layer.Type: ApplicationFiled: June 5, 2017Publication date: September 21, 2017Inventors: Li Yang, Huapu Pan, Qianfan Xu, Dawei Zheng, Xiao Shen
-
Publication number: 20170219777Abstract: An edge coupling device including a substrate, a buried oxide disposed over the substrate, a cladding material disposed over the buried oxide, where the cladding material includes a trench, an inversely tapered silicon waveguide disposed within the cladding material beneath the trench, and a ridge waveguide disposed within the trench, where the ridge waveguide and the inversely tapered silicon waveguide are vertically-aligned with each other.Type: ApplicationFiled: April 19, 2017Publication date: August 3, 2017Inventors: Huapu Pan, Zongrong Liu, Hongzhen Wei, Hongmin Chen
-
Patent number: 9709741Abstract: An apparatus comprises a substrate comprising a silicon dioxide (SiO2) material disposed on top of the substrate, a silicon waveguide comprising a first adiabatic tapering and enclosed in the silicon dioxide material, and a low-index waveguide disposed on top of the substrate and adjacent to the first adiabatic tapering. A mode converter fabrication method comprises obtaining a mode converter comprising a substrate, a silicon waveguide disposed on the substrate and comprising a sidewall and a first adiabatic tapering, and a hard mask disposed on the silicon waveguide and comprising a silicon dioxide (SiO2) layer, wherein the hard mask does not cover the sidewall, and oxidizing the silicon waveguide and the hard mask, wherein oxidizing the silicon waveguide and the hard mask encloses the silicon waveguide within the silicon dioxide layer.Type: GrantFiled: April 30, 2015Date of Patent: July 18, 2017Assignee: Futurewei Technologies, Inc.Inventors: Li Yang, Huapu Pan, Qianfan Xu, Dawei Zheng, Xiao Shen
-
Patent number: 9703039Abstract: A method of fabricating an edge coupling device and an edge coupling device are provided. The method includes removing a portion of cladding material to form a trench over an inversely tapered silicon waveguide, depositing a material having a refractive index greater than silicon dioxide over remaining portions of the cladding material and in the trench, and removing a portion of the material within the trench to form a ridge waveguide.Type: GrantFiled: April 7, 2015Date of Patent: July 11, 2017Assignee: Futurewei Technologies, Inc.Inventors: Huapu Pan, Zongrong Liu, Hongzhen Wei, Hongmin Chen
-
Patent number: 9638857Abstract: An apparatus comprising a waveguide along a longitudinal axis at a first elevation, an optical splitter coupled to a first edge of the waveguide along the longitudinal axis, two or more inverse tapers coupled to a second edge of the optical splitter along the longitudinal axis, and one or more offset inverse tapers that are substantially parallel with the two or more inverse tapers, wherein the one or more offset inverse tapers are along the longitudinal axis at a second elevation.Type: GrantFiled: October 28, 2014Date of Patent: May 2, 2017Assignee: Futurewei Technologies, Inc.Inventors: Yu Sheng Bai, Huapu Pan
-
Patent number: 9563014Abstract: An apparatus comprising a thick waveguide comprising a first adiabatic tapering from a first location to a second location, wherein the first adiabatic tapering is wider at the first location than at the second location, and a thin slab waveguide comprising a second adiabatic tapering from the first location to the second location, wherein the second adiabatic tapering is wider at the second location than at the first location, and a third adiabatic tapering from the second location to a third location, wherein the third adiabatic tapering is wider at the second location than at the third location, wherein at least a portion of the first adiabatic tapering is adjacent to the second adiabatic tapering, and wherein the first adiabatic tapering and the second adiabatic tapering are separated from each other by a constant gap.Type: GrantFiled: April 7, 2015Date of Patent: February 7, 2017Assignee: Futurewei Technologies, Inc.Inventors: Huapu Pan, Hongmin Chen, Xueyan Zheng
-
Publication number: 20160377809Abstract: A method includes forming a first optical structure with an inverse taper and a separate optical structure on a semiconductor chip. The illustrative method also includes applying a protective structure over the optical structures and patterning the protective structure to expose the separate optical structure. The method further includes removing a portion of the separate optical structure to form a separate trimmed taper separate from, but adjacent to, the first optical structure. The protective structure is then removed from the first optical structure. Apparatuses are also disclosed.Type: ApplicationFiled: June 25, 2015Publication date: December 29, 2016Inventors: Li Yang, Huapu Pan, Yu Sheng Bai, Xiao Andy Shen
-
Publication number: 20150316720Abstract: An apparatus comprises a substrate comprising a silicon dioxide (SiO2) material disposed on top of the substrate, a silicon waveguide comprising a first adiabatic tapering and enclosed in the silicon dioxide material, and a low-index waveguide disposed on top of the substrate and adjacent to the first adiabatic tapering. A mode converter fabrication method comprises obtaining a mode converter comprising a substrate, a silicon waveguide disposed on the substrate and comprising a sidewall and a first adiabatic tapering, and a hard mask disposed on the silicon waveguide and comprising a silicon dioxide (SiO2) layer, wherein the hard mask does not cover the sidewall, and oxidizing the silicon waveguide and the hard mask, wherein oxidizing the silicon waveguide and the hard mask encloses the silicon waveguide within the silicon dioxide layer.Type: ApplicationFiled: April 30, 2015Publication date: November 5, 2015Inventors: Li Yang, Huapu Pan, Qianfan Xu, Dawei Zheng, Xiao Shen
-
Publication number: 20150293303Abstract: A method of fabricating an edge coupling device and an edge coupling device are provided. The method includes removing a portion of cladding material to form a trench over an inversely tapered silicon waveguide, depositing a material having a refractive index greater than silicon dioxide over remaining portions of the cladding material and in the trench, and removing a portion of the material within the trench to form a ridge waveguide.Type: ApplicationFiled: April 7, 2015Publication date: October 15, 2015Inventors: Huapu Pan, Zongrong Liu, Hongzhen Wei, Hongmin Chen
-
Publication number: 20150285997Abstract: An apparatus comprising a thick waveguide comprising a first adiabatic tapering from a first location to a second location, wherein the first adiabatic tapering is wider at the first location than at the second location, and a thin slab waveguide comprising a second adiabatic tapering from the first location to the second location, wherein the second adiabatic tapering is wider at the second location than at the first location, and a third adiabatic tapering from the second location to a third location, wherein the third adiabatic tapering is wider at the second location than at the third location, wherein at least a portion of the first adiabatic tapering is adjacent to the second adiabatic tapering, and wherein the first adiabatic tapering and the second adiabatic tapering are separated from each other by a constant gap.Type: ApplicationFiled: April 7, 2015Publication date: October 8, 2015Inventors: Huapu Pan, Hongmin Chen, Xueyan Zheng
-
Publication number: 20150117813Abstract: An apparatus comprising a waveguide along a longitudinal axis at a first elevation, an optical splitter coupled to a first edge of the waveguide along the longitudinal axis, two or more inverse tapers coupled to a second edge of the optical splitter along the longitudinal axis, and one or more offset inverse tapers that are substantially parallel with the two or more inverse tapers, wherein the one or more offset inverse tapers are along the longitudinal axis at a second elevation.Type: ApplicationFiled: October 28, 2014Publication date: April 30, 2015Inventors: Yu Sheng Bai, Huapu Pan
-
Publication number: 20130330036Abstract: A method of exciting a selected light propagation mode in a device is disclosed. At least two light beams are propagated proximate a waveguide of the device substantially parallel to a selected surface of the waveguide. Light is transferred from the at least two beams of light into the waveguide through the selected surface to excite the selected light propagation mode in the waveguide.Type: ApplicationFiled: June 6, 2012Publication date: December 12, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Solomon Assefa, Huapu Pan, Yurii Vlasov
-
Publication number: 20130330037Abstract: A method of exciting a selected light propagation mode in a device is disclosed. At least two light beams are propagated proximate a waveguide of the device substantially parallel to a selected surface of the waveguide. Light is transferred from the at least two beams of light into the waveguide through the selected surface to excite the selected light propagation mode in the waveguide.Type: ApplicationFiled: June 19, 2012Publication date: December 12, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Solomon Assefa, Huapu Pan, Yurii Vlasov
-
Publication number: 20100327382Abstract: The monolithic application of a high speed TWPDA with impedance matching. Use of the high speed monolithic TWPDA will allow for more efficient transfer of optical signals within analog circuits and over distances.Type: ApplicationFiled: June 24, 2010Publication date: December 30, 2010Applicant: UNIVERSITY OF VIRGINIA PATENT FOUNDATIONInventors: Joe C. Campbell, Andreas Beling, Huapu Pan