Patents by Inventor Huaxiang Li

Huaxiang Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MOBILE LIQUID NITROGEN FIRE EXTINGUISHING SYSTEM AND METHOD FOR UTILITY TUNNEL
    Publication number: 20230241431
    Abstract: A mobile liquid nitrogen fire extinguishing system for a utility tunnel is provided, including a liquid nitrogen production assembly, a fire extinguishing assembly, a monitoring device, and a liquid nitrogen conveying tubing. The mobile fire extinguishing assembly includes a liquid nitrogen storage tank and a liquid nitrogen booster pump. The liquid nitrogen storage tank is connected to the liquid nitrogen booster pump. The liquid nitrogen booster pump conveys liquid nitrogen to branch pipes in the utility tunnel through the liquid nitrogen conveying tubing. Liquid nitrogen injection ports are formed in each of the branch pipes. The liquid nitrogen production assembly is mobile and conveys the prepared liquid nitrogen to the liquid nitrogen storage tank. The monitoring device includes a first monitoring assembly and a second monitoring assembly.
    Type: Application
    Filed: December 2, 2020
    Publication date: August 3, 2023
    Inventors: Guowei ZHANG, Dong GUO, Huaxiang LI, Yinan SUN, Zheng LI, Zhiwei ZHANG, Su YAN, Junbin HUANG
  • Structure and method to improve overlay performance in semiconductor devices
    Patent number: 10833022
    Abstract: In an exemplary method, a first layer is formed on a substrate. First overlay marks are formed in a first zone of the first layer. A non-transparent layer is formed on top of the first layer. At least a portion of the non-transparent layer is removed from an area above the first zone of the first layer. This provides optical access to the first overlay marks. A second layer is formed on top of the non-transparent layer. Second overlay marks are formed in a second zone of the second layer. Position information is obtained from each of the first overlay marks and the second overlay marks.
    Type: Grant
    Filed: October 16, 2019
    Date of Patent: November 10, 2020
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Cung D. Tran, Huaxiang Li, Bradley Morgenfeld, Xintuo Dai, Sanggil Bae, Rui Chen, Md Motasim Bellah, Dongyue Yang, Minghao Tang, Christian J. Ayala, Ravi Prakash Srivastava, Kripa Nidhan Chauhan, Pavan Kumar Chinthamanipeta Sripadarao
  • STRUCTURE AND METHOD TO IMPROVE OVERLAY PERFORMANCE IN SEMICONDUCTOR DEVICES
    Publication number: 20200051923
    Abstract: In an exemplary method, a first layer is formed on a substrate. First overlay marks are formed in a first zone of the first layer. A non-transparent layer is formed on top of the first layer. At least a portion of the non-transparent layer is removed from an area above the first zone of the first layer. This provides optical access to the first overlay marks. A second layer is formed on top of the non-transparent layer. Second overlay marks are formed in a second zone of the second layer. Position information is obtained from each of the first overlay marks and the second overlay marks.
    Type: Application
    Filed: October 16, 2019
    Publication date: February 13, 2020
    Applicant: GLOBALFOUNDRIES INC.
    Inventors: Cung D. Tran, Huaxiang Li, Bradley Morgenfeld, Xintuo Dai, Sanggil Bae, Rui Chen, Md Motasim Bellah, Dongyue Yang, Minghao Tang, Christian J. Ayala, Ravi Prakash Srivastava, Kripa Nidhan Chauhan, Pavan Kumar Chinthamanipeta Sripadarao
  • Structure and method to improve overlay performance in semiconductor devices
    Patent number: 10504851
    Abstract: In an exemplary method, a first layer is formed on a substrate. First overlay marks are formed in a first zone of the first layer. A non-transparent layer is formed on top of the first layer. At least a portion of the non-transparent layer is removed from an area above the first zone of the first layer. This provides optical access to the first overlay marks. A second layer is formed on top of the non-transparent layer. Second overlay marks are formed in a second zone of the second layer. Position information is obtained from each of the first overlay marks and the second overlay marks.
    Type: Grant
    Filed: February 26, 2018
    Date of Patent: December 10, 2019
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Cung D. Tran, Huaxiang Li, Bradley Morgenfeld, Xintuo Dai, Sanggil Bae, Rui Chen, Md Motasim Bellah, Dongyue Yang, Minghao Tang, Christian J. Ayala, Ravi Prakash Srivastava, Kripa Nidhan Chauhan, Pavan Kumar Chinthamanipeta Sripadarao
  • STRUCTURE AND METHOD TO IMPROVE OVERLAY PERFORMANCE IN SEMICONDUCTOR DEVICES
    Publication number: 20190267329
    Abstract: In an exemplary method, a first layer is formed on a substrate. First overlay marks are formed in a first zone of the first layer. A non-transparent layer is formed on top of the first layer. At least a portion of the non-transparent layer is removed from an area above the first zone of the first layer. This provides optical access to the first overlay marks. A second layer is formed on top of the non-transparent layer. Second overlay marks are formed in a second zone of the second layer. Position information is obtained from each of the first overlay marks and the second overlay marks.
    Type: Application
    Filed: February 26, 2018
    Publication date: August 29, 2019
    Applicant: GLOBALFOUNDRIES INC.
    Inventors: Cung D. Tran, Huaxiang Li, Bradley Morgenfeld, Xintuo Dai, Sanggil Bae, Rui Chen, Md Motasim Bellah, Dongyue Yang, Minghao Tang, Christian J. Ayala, Ravi Prakash Srivastava, Kripa Nidhan Chauhan, Pavan Kumar Chinthamanipeta Sripadarao