Patents by Inventor Huazhang Chen

Huazhang Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230170860
    Abstract: The present disclosure discloses a Doherty power amplifier, including at least one carrier power amplifier and at least one peak power amplifier connected in parallel, each carrier power amplifier includes at least one carrier power amplifier unit connected in parallel for power combination, and each peak power amplifier includes at least one peak power amplifier unit connected in parallel for power combination, each of the carrier power amplifier unit and the peak power amplifier unit includes two power amplifier circuits connected in parallel for power combination, and each of the two power amplifier circuits includes a medium-low power amplifier transistor having saturation power less than or equal to a preset threshold. The present disclosure further discloses a power amplification method.
    Type: Application
    Filed: June 22, 2021
    Publication date: June 1, 2023
    Inventors: Huazhang CHEN, Xiaojun CUI, Ting HOU, Jinyuan AN
  • Publication number: 20190248950
    Abstract: A method to stabilize a polyoxyalkylene polyether polyol against oxidative degradation by including therein an oligomeric sterically hindered phenol, namely phenol, 4-alkyl-, reaction products with dicyclopentadiene and isobutylene, having the formula I: wherein n is an integer ranging from 0 to 10, R is an alkyl group with 12 carbon atoms or less, as an antioxidant stabilizer, optionally in combination with other antioxidants, to said polyether polyol. This invention further relates to polyols stabilized by the method of this invention and to stabilized polyurethanes prepared from such stabilized polyols or stabilizers component.
    Type: Application
    Filed: January 7, 2017
    Publication date: August 15, 2019
    Applicant: ITA INTERNATIONAL PTY. LTD.
    Inventors: Huazhang CHEN, Mei DENG
  • Patent number: 9837964
    Abstract: The disclosure discloses an amplifier system and a device The amplifier system includes: at least two stages of amplifiers which are sequentially connected, wherein a static working current value of an Nth-stage amplifier in the at least two stages of amplifiers is a value obtained by decreasing a first value by a first pre-set multiple, and a static working current value of an (N?1)th-stage amplifier in the at least two stages of amplifiers is a value obtained by increasing a second value by a second pre-set multiple; the first value is a recommended static working current value corresponding to the Nth-stage amplifier, wherein N is any integer greater than or equal to 2; and the second value is a recommended static working current value corresponding to the (N?1)th-stage amplifier. The solution effectively improves power amplification efficiency in a case of guaranteeing a linearity of a power amplification link.
    Type: Grant
    Filed: July 9, 2014
    Date of Patent: December 5, 2017
    Assignee: XI'AN ZHONGXING NEW SOFTWARE CO. LTD.
    Inventors: Huazhang Chen, Fan Zhang, Xiaojun Cui
  • Publication number: 20170033745
    Abstract: The disclosure discloses an amplifier system and a device. The amplifier system includes: at least two stages of amplifiers which are sequentially connected, wherein a static working current value of an Nth-stage amplifier in the at least two stages of amplifiers is a value obtained by decreasing a first value by a first pre-set multiple, and a static working current value of an (N?1)th-stage amplifier in the at least two stages of amplifiers is a value obtained by increasing a second value by a second pre-set multiple; the first value is a recommended static working current value corresponding to the Nth-stage amplifier, wherein N is any integer greater than or equal to 2; and the second value is a recommended static working current value corresponding to the (N?1)th-stage amplifier. The solution effectively improves power amplification efficiency in a case of guaranteeing a linearity of a power amplification link.
    Type: Application
    Filed: July 9, 2014
    Publication date: February 2, 2017
    Inventors: Huazhang CHEN, Fan ZHANG, Xiaojun CUI
  • Publication number: 20160294339
    Abstract: A power supply method and device for a radio-frequency power amplifier are provided.
    Type: Application
    Filed: June 10, 2014
    Publication date: October 6, 2016
    Inventors: Huazhang CHEN, Gang WANG, Jinyuan AN
  • Patent number: 9331638
    Abstract: Disclosed is a Doherty power amplifier apparatus, including: a drive amplifier circuit, a power splitter circuit and a power combiner circuit, wherein the power splittercircuit is connected to the drive amplifier circuit, the apparatus further comprising: a carrier amplifier circuit and a peak amplifier circuit connected in parallel between the power splitter circuit and the power combiner circuit, wherein the carrier amplifier circuit comprises one or more parallel carrier amplification branches, wherein each carrier amplification branch comprises a multi-stage carrier amplifier apparatus, the multi-stage carrier amplifier apparatus is used for achieving multi-stage carrier amplification; and the peak amplifier circuit comprises one or more parallel peak amplification branches, wherein each peak amplification branch comprises a multi-stage peak amplifier apparatus, the multi-stage peak amplifier apparatus is used for achieving multi-stage peak amplification.
    Type: Grant
    Filed: October 26, 2011
    Date of Patent: May 3, 2016
    Assignee: ZTE Corproation
    Inventors: Huazhang Chen, Jianli Liu, Jinyuan An, Xiaojun Cui
  • Publication number: 20150349719
    Abstract: Disclosed is a Doherty power amplifier apparatus, including: a drive amplifier circuit, a power splitter circuit and a power combiner circuit, wherein the power splittercircuit is connected to the drive amplifier circuit, the apparatus further comprising: a carrier amplifier circuit and a peak amplifier circuit connected in parallel between the power splitter circuit and the power combiner circuit, wherein the carrier amplifier circuit comprises one or more parallel carrier amplification branches, wherein each carrier amplification branch comprises a multi-stage carrier amplifier apparatus, the multi-stage carrier amplifier apparatus is used for achieving multi-stage carrier amplification; and the peak amplifier circuit comprises one or more parallel peak amplification branches, wherein each peak amplification branch comprises a multi-stage peak amplifier apparatus, the multi-stage peak amplifier apparatus is used for achieving multi-stage peak amplification.
    Type: Application
    Filed: October 26, 2011
    Publication date: December 3, 2015
    Applicant: ZTE CORPORATION
    Inventors: Huazhang Chen, Jianli Liu, Jinyuan An, Xiaojun Cui
  • Publication number: 20150008984
    Abstract: The present invention provides a circulator power amplifier circuit and a connection method thereof. Wherein, the circulator power amplifier circuit includes a power amplifier, a circulator, a power load and a load. An output end of the power amplifier is connected to an input end of the circulator, the load is connected to an output end of the circulator and the power load is connected to the load end of the circulator, wherein, the circulator is an N-stage circulator or an M-port circulator, where both N and M are integers greater than one. The above circulator power amplifier circuit connected through using the circulator power amplifier circuit connection method increases the isolation for the circulator, and it is of great significance in terms of improving a standing wave of the power amplifier, ensuring stability of specification, preventing mismatch damages of the power amplifier and increasing reliability of the power amplifier.
    Type: Application
    Filed: March 15, 2012
    Publication date: January 8, 2015
    Applicant: ZTE CORPORATION
    Inventors: Huazhang Chen, Xin Wang
  • Publication number: 20140218116
    Abstract: The present invention relates to a power amplifier apparatus and a power amplifier circuit thereof, the power amplifier circuit uses Doherty circuit structure, and the final stage power amplifier circuit uses high electron mobility transistor (HEMT) power amplifiers to achieve a Carrier amplifier with the Doherty circuit structure and a Peak amplifier with the Doherty circuit structure. The power amplifier apparatus and a power amplifier circuit thereof in the present invention improves the efficiency of the power amplifier.
    Type: Application
    Filed: October 28, 2011
    Publication date: August 7, 2014
    Applicant: ZTE CORPORATION
    Inventors: Xiaojun Cui, Huazhang Chen, Jianli Liu, Jinyuan An
  • Patent number: 8797099
    Abstract: The present invention relates to a power amplifier apparatus and power amplifier circuit, and the power amplifier circuit uses the Doherty circuit structure, and uses a high voltage heterojunction bipolor transistor (HVHBT) power amplifier to achieve a Carrier amplifier of the Doherty circuit structure, and uses lateral double-diffused metal oxide semiconductor (LDMOS) to achieve a Peak amplifier. The power amplifier apparatus and power amplifier circuit in the present invention improves the efficiency of the power amplifier.
    Type: Grant
    Filed: October 28, 2011
    Date of Patent: August 5, 2014
    Assignee: ZTE Corporation
    Inventors: Xiaojun Cui, Huazhang Chen, Jinyuan An, Jianli Liu
  • Patent number: 8773206
    Abstract: The present invention relates to a power amplifier apparatus and a power amplifier circuit thereof, the power amplifier circuit uses Doherty circuit structure, and it uses a high voltage heterojunction bipolor transistor (HVHBT) power amplifier to achieve a Carrier amplifier with the Doherty circuit structure, and uses a high electron mobility transistor (HEMT) power amplifier to achieve a Peak amplifier with the Doherty circuit structure. The power amplifier apparatus and a power amplifier circuit thereof in the present invention improves the efficiency of the power amplifier.
    Type: Grant
    Filed: October 27, 2011
    Date of Patent: July 8, 2014
    Assignee: ZTE Corporation
    Inventors: Huazhang Chen, Xiaojun Cui, Jianli Liu
  • Patent number: 8773205
    Abstract: The present invention discloses a Doherty power amplifier and an implementation method thereof. A peak amplifying circuit of the Doherty power amplifier comprises a radio frequency switching circuit configured to control turn-on of the peak amplifying circuit; wherein a last stage carrier amplifier of a carrier amplifying circuit of the power amplifier uses a HVHBT device, and a last stage peak amplifier of the peak amplifying circuit of the power amplifier uses a GaN device. The present invention avoids the shortcoming when the peak branches in the Doherty power amplifier are turned on ahead of time, decreases power consumption of the peak amplifier and improves the batch efficiency of the whole Doherty power amplifier.
    Type: Grant
    Filed: October 27, 2011
    Date of Patent: July 8, 2014
    Assignee: ZTE Corporation
    Inventors: Huazhang Chen, Jianli Liu, Xiaojun Cui, Bin Duan
  • Patent number: 8754709
    Abstract: The present invention discloses a Doherty power amplifier and a method for implementing the Doherty power amplifier. The Doherty power amplifier includes a peak amplifying branch and a carrier amplifying branch, wherein, the peak amplifying branch includes a radio frequency switch, and the radio frequency switch is configured to control on/off of a last stage peak power amplifier in the peak amplifying branch; wherein, a high voltage heterojunction bipolar transistor (HVHBT) device is adopted for a last stage carrier power amplifier of the carrier amplifying branch, and a laterally diffused metal oxide semiconductor (LDMOS) device is adopted for the last stage peak power amplifier of the peak amplifying branch of the power amplifier. By the present invention, it avoids that the peak power consumption is increased when the peak power amplifier is on ahead of time and enhances the efficiency of the whole power amplifier.
    Type: Grant
    Filed: October 27, 2011
    Date of Patent: June 17, 2014
    Assignee: ZTE Corporation
    Inventors: Huazhang Chen, Jianli Liu, Xiaojun Cui
  • Publication number: 20140125415
    Abstract: The present invention relates to a power amplifier apparatus and power amplifier circuit, and the power amplifier circuit uses the Doherty circuit structure, and uses a high voltage heterojunction bipolor transistor (HVHBT) power amplifier to achieve a Carrier amplifier of the Doherty circuit structure, and uses lateral double-diffused metal oxide semiconductor (LDMOS) to achieve a Peak amplifier. The power amplifier apparatus and power amplifier circuit in the present invention improves the efficiency of the power amplifier.
    Type: Application
    Filed: October 28, 2011
    Publication date: May 8, 2014
    Applicant: ZTE CORPORATION
    Inventors: Xiaojun Cui, Huazhang Chen, Jinyuan An, Jianli Liu
  • Patent number: 8710923
    Abstract: A control method and apparatus of a peak amplifier of a Doherty power amplifier are disclosed, wherein, the control apparatus includes a Radio Frequency (RF) switching circuit in a peak amplification branch of the Doherty power amplifier, which is used to control the turn-on and turn-off of the peak amplifier in the peak amplification branch. The method and apparatus avoid a disadvantage that the peak branch in the Doherty power amplifier is turned on ahead of time, thus reducing the power consumption of the peak power amplifier, and enhancing the mass efficiency of the whole power amplifier; and largely reducing the product expense and production expense of the power amplifier compared to the scheme of some manufacturers improving on-time of the peak power amplifier using complex digital circuits.
    Type: Grant
    Filed: October 27, 2011
    Date of Patent: April 29, 2014
    Assignee: ZTE Corporation
    Inventors: Huazhang Chen, Jianli Liu, Jinyuan An, Xiaojun Cui
  • Publication number: 20140035679
    Abstract: The present invention relates to a power amplifier apparatus and power amplifier circuit thereof, and the power amplifier circuit uses the Doherty circuit structure, and the power amplifier circuit uses high voltage heterojunction bipolor transistor (HVHBT) power amplifiers to achieve a carrier amplifier and a peak amplifier of the Doherty circuit structure. The power amplifier apparatus and power amplifier circuit thereof in the present invention improves the efficiency of the power amplification.
    Type: Application
    Filed: October 27, 2011
    Publication date: February 6, 2014
    Applicant: ZTE CORPORATION
    Inventors: Huazhang Chen, Xiaojun Cui, Jianli Liu, Jinyuan An
  • Publication number: 20140035676
    Abstract: The present invention discloses a Doherty power amplifier and an implementation method thereof. A peak amplifying circuit of the Doherty power amplifier comprises a radio frequency switching circuit configured to control turn-on of the peak amplifying circuit; wherein a last stage carrier amplifier of a carrier amplifying circuit of the power amplifier uses a HVHBT device, and a last stage peak amplifier of the peak amplifying circuit of the power amplifier uses a GaN device. The present invention avoids the shortcoming when the peak branches in the Doherty power amplifier are turned on ahead of time, decreases power consumption of the peak amplifier and improves the batch efficiency of the whole Doherty power amplifier.
    Type: Application
    Filed: October 27, 2011
    Publication date: February 6, 2014
    Applicant: ZTE CORPORATION
    Inventors: Huazhang Chen, Jianli Liu, Xiaojun Cui, Bin Duan
  • Publication number: 20140035678
    Abstract: The present invention relates to a power amplifier apparatus and a power amplifier circuit. The power amplifier circuit uses a Doherty circuit structure, uses a High Electron Mobility Transistor (HEMT) power amplifier to implement a Carrier amplifier with the Doherty circuit structure, and uses a Laterally Diffused Metal Oxide Semiconductor Field Effect Transistor (LDMOS) to implement a Peak amplifier. With the power amplifier apparatus and power amplifier circuit of the present invention, the power amplifier efficiency is improved.
    Type: Application
    Filed: October 28, 2011
    Publication date: February 6, 2014
    Applicant: ZTE CORPORATION
    Inventors: Xiaojun Cui, Huazhang Chen, Jianli Liu
  • Publication number: 20140035677
    Abstract: The present invention discloses a Doherty power amplifier and a method for implementing the Doherty power amplifier. The Doherty power amplifier includes a peak amplifying branch and a carrier amplifying branch, wherein, the peak amplifying branch includes a radio frequency switch, and the radio frequency switch is configured to control on/off of a last stage peak power amplifier in the peak amplifying branch; wherein, a high voltage heterojunction bipolar transistor (HVHBT) device is adopted for a last stage carrier power amplifier of the carrier amplifying branch, and a laterally diffused metal oxide semiconductor (LDMOS) device is adopted for the last stage peak power amplifier of the peak amplifying branch of the power amplifier. By the present invention, it avoids that the peak power consumption is increased when the peak power amplifier is on ahead of time and enhances the efficiency of the whole power amplifier.
    Type: Application
    Filed: October 27, 2011
    Publication date: February 6, 2014
    Applicant: ZTE CORPORATION
    Inventors: Huazhang Chen, Jianli Liu, Xiaojun Cui
  • Publication number: 20140035680
    Abstract: The present invention relates to a power amplifier apparatus and a power amplifier circuit thereof, the power amplifier circuit uses Doherty circuit structure, and it uses a high voltage heterojunction bipolar transistor (HVHBT) power amplifier to achieve a Carrier amplifier with the Doherty circuit structure, and uses a high electron mobility transistor (HEMT) power amplifier to achieve a Peak amplifier with the Doherty circuit structure. The power amplifier apparatus and a power amplifier circuit thereof in the present invention improves the efficiency of the power amplifier.
    Type: Application
    Filed: October 27, 2011
    Publication date: February 6, 2014
    Applicant: ZTE CORPORATION
    Inventors: Huazhang Chen, Xiaojun Cui, Jianli Liu