Abstract: The disclosed apparatus comprises a computing array comprising a plurality of computing modules, wherein each computing module comprises at least one storage cell, a reset switch, and a capacitor; the storage cell comprises at least one storage switch, and the storage switch comprises a storage control terminal, a storage detection terminal, and a storage terminal, the storage control terminal to receive a storage state voltage to adjust the impedance characteristic between the storage detection terminal and the storage terminal; the reset switch comprises a reset control terminal, a reset detection terminal, and a reset terminal, the reset control terminal to receive a reset voltage and the reset terminal is used to receive a reset state voltage. The disclosed apparatus also comprises a control module, which is used to control the computing array to perform at least one of a store operation, a read operation, and a compute operation.

Abstract: The present disclosure relates to a memory device based on a ferroelectric capacitor, which includes a control unit for writing data into a memory cell or reading data from the memory cell and a plurality of memory cells arranged in an array; each memory cell includes an external interface, a first switch, a transistor, a first capacitor and a second capacitor, wherein at least one of the first capacitor and the second capacitor is a ferroelectric capacitor; the first switch has a first port connected with a first word line, a second port connected with a bit line, and a third port connected with one end of the first capacitor; and the transistor has a gate electrode connected with another end of the first capacitor and one end of the second capacitor, a source electrode connected with a first read terminal, and a drain electrode connected with a second read terminal, wherein another end of the second capacitor is connected with a second word line.

Abstract: The present disclosure relates to a computing-in-memory array, chip and electronic device. The said device comprises: a computing-in-memory array comprising at least one computing-in-memory cell, where said computing-in-memory cell comprises the first switch, the second switch, the third switch, the fourth switch, the coupling capacitor, the first bitline, the second bitline, the third bitline, the first wordline, the second wordline and the third wordline; a control module connected to said computing-in-memory array, which controls the voltages of each wordline and bitline to read and write data through said computing-in-memory array, or to perform computing-in-memory operations.

Abstract: The present disclosure relates to a memory device based on a ferroelectric capacitor, which includes a control unit for writing data into a memory cell or reading data from the memory cell and a plurality of memory cells arranged in an array; each memory cell includes an external interface, a first switch, a transistor, a first capacitor and a second capacitor, wherein at least one of the first capacitor and the second capacitor is a ferroelectric capacitor; the first switch has a first port connected with a first word line, a second port connected with a bit line, and a third port connected with one end of the first capacitor; and the transistor has a gate electrode connected with another end of the first capacitor and one end of the second capacitor, a source electrode connected with a first read terminal, and a drain electrode connected with a second read terminal, wherein another end of the second capacitor is connected with a second word line.

Abstract: The present disclosure relates to a static random-access memory and an electronic device. The memory includes at least one storage circuit, wherein the storage circuit includes a first inverter, a second inverter, a first switch, a second switch, a third switch, a fourth switch, a fifth switch, a word-line, a first bit-line, a second bit-line, a shift-input line, and a shift-output line. The circuit is used to access data by using the first bit-line and/or the second bit-line when it works in a first mode, and the circuit is used to shift the input data to the shift-input line and output the shifted data through the shift-output line when it works in a second mode. By implementing shift-input and shift-output within the memory, the disclosed embodiment can achieve high-concurrency data access and data update, and it also enables high integration and low power consumption.

Abstract: The present disclosure discloses an SRAM cell circuit and an SRAM array circuit. The cell circuit includes a data storage module, a write operation module, and a read operation module. The data storage module consists of the component with the current-voltage hysteresis characteristic and is configured to store data with the current-voltage hysteresis characteristic. The data storage module includes a write operation port and a read operation port, and the data information stored in the data storage module may change without external energy input. The write operation module is coupled to the write operation port and is configured to perform write operation on the stored information. The write operation module ensures the stored information unchanged by continuously controlling the write operation port while not changing the stored information. The read operation module is coupled to the read operation port and configured to perform read operation on the stored information.

Abstract: In a data write control method, a write control apparatus currently runs a program in a write-back mode in which data are written to a volatile memory. When the apparatus detects that a quantity of dirty blocks in the volatile memory has reached a threshold, it predicts a first amount of execution progress of the program within a prediction time period under an assumption of the apparatus being in a write-through mode in which data are written to the volatile memory and a non-volatile memory. The apparatus also predicts a second amount of execution progress of the program within the prediction time period under an assumption of the apparatus being in the write-back mode. When the predicted first amount of execution progress exceeds the predicted second amount of execution progress, the apparatus switches from the write-back mode to the write-through mode.

Abstract: The present disclosure discloses an SRAM cell circuit and an SRAM array circuit. The cell circuit includes a data storage module, a write operation module, and a read operation module. The data storage module consists of the component with the current-voltage hysteresis characteristic and is configured to store data with the current-voltage hysteresis characteristic. The data storage module includes a write operation port and a read operation port, and the data information stored in the data storage module may change without external energy input. The write operation module is coupled to the write operation port and is configured to perform write operation on the stored information. The write operation module ensures the stored information unchanged by continuously controlling the write operation port while not changing the stored information. The read operation module is coupled to the read operation port and configured to perform read operation on the stored information.

Abstract: In a data write control method, a write control apparatus currently runs a program in a write-back mode in which data are written to a volatile memory. When the apparatus detects that a quantity of dirty blocks in the volatile memory has reached a threshold, it predicts a first amount of execution progress of the program within a prediction time period under an assumption of the apparatus being in a write-through mode in which data are written to the volatile memory and a non-volatile memory. The apparatus also predicts a second amount of execution progress of the program within the prediction time period under an assumption of the apparatus being in the write-back mode. When the predicted first amount of execution progress exceeds the predicted second amount of execution progress, the apparatus switches from the write-back mode to the write-through mode.

Abstract: A data write control method includes detecting a quantity of dirty blocks in a first memory when a write control apparatus is in write-back mode; separately predicting execution progress of a program run by a processor within a danger time period in the two write modes when the quantity of dirty blocks reaches a first preset threshold; when it is predicted that the execution progress of the program run by the processor within the danger time period in write-through mode is faster than the execution progress of the program run by the processor within the danger time period in write-back mode, switching a current data write mode to the write-through mode; and detecting the quantity of dirty blocks when the write control apparatus is in write-through mode and switching the current data write mode to the write-back mode when the quantity of dirty blocks decreases to a second preset threshold.

Abstract: When a data backup apparatus is powered on, a quantity of dead blocks and a quantity of live blocks are counted. After the data backup apparatus is powered off, a proportion occupied by dead blocks corresponding to each sequence access identifier at the power-on time point in a total quantity of sampled cache blocks corresponding to the sequence access identifier, is calculated according to the counted quantities of dead blocks and live blocks that correspond to the sequence access identifier at the time point when the data backup apparatus is powered on. The calculated proportion is compared with a preset threshold, and a dead block in a volatile memory unit is predicted according to a comparison result. During backup, a cache block that is predicted to be a dead block is not backed up.

Abstract: When a data backup apparatus is powered on, a quantity of dead blocks and a quantity of live blocks are counted. After the data backup apparatus is powered off, a proportion occupied by dead blocks corresponding to each sequence access identifier at the power-on time point in a total quantity of sampled cache blocks corresponding to the sequence access identifier, is calculated according to the counted quantities of dead blocks and live blocks that correspond to the sequence access identifier at the time point when the data backup apparatus is powered on. The calculated proportion is compared with a preset threshold, and a dead block in a volatile memory unit is predicted according to a comparison result. During backup, a cache block that is predicted to be a dead block is not backed up.

Abstract: A data write control method includes detecting a quantity of dirty blocks in a first memory when a write control apparatus is in write-back mode; separately predicting execution progress of a program run by a processor within a danger time period in the two write modes when the quantity of dirty blocks reaches a first preset threshold; when it is predicted that the execution progress of the program run by the processor within the danger time period in write-through mode is faster than the execution progress of the program run by the processor within the danger time period in write-back mode, switching a current data write mode to the write-through mode; and detecting the quantity of dirty blocks when the write control apparatus is in write-through mode and switching the current data write mode to the write-back mode when the quantity of dirty blocks decreases to a second preset threshold.

Abstract: Provided are a method and a system for initializing an RF module through non-volatile control, including: storing, by a non-volatile storage array, configuration information for initializing the RF module, and backing up the configuration information when receiving a power-down instruction (S1); and reading, by an RF module initialization accelerator, the configuration information from the non-volatile storage array when receiving a power-up instruction, and transmitting the read configuration information to the RF module, thereby initializing the RF module (S2). With the technical solution given in the present invention, the initialization of an RF module becomes much faster, and the power consumption of a wireless communication terminal can be reduced. In addition, the initialization of various RF modules can be supported, and meanwhile the hardware resources can be saved, thereby enhancing the extensibility of the system.

Abstract: The present invention is a system and method for digital watermarking, which discloses a system for digital watermarking, to add a watermark to an audio signal generated by a signal source. The system comprises: a spectrum modulator configured to perform spectrum modulation to a watermark bit and a pseudo noise signal to be embedded into the audio signal to generate a modulated signal; a distortion controller coupled to the signal source and the spectrum modulator and configured to shape the modulated signal based on the audio signal, so as to generate a shaped signal satisfying a predetermined distortion constraint; and an interference compensator coupled to the signal source and the distortion controller and configured to generate a compensation signal based on the audio signal, the pseudo noise signal, and the shaped signal, wherein the compensation signal is for compensating for interference to watermark decoding caused by the audio signal.

Abstract: Provided are a method and a system for initializing an RF module through non-volatile control, including: storing, by a non-volatile storage array, configuration information for initializing the RF module, and backing up the configuration information when receiving a power-down instruction (S1); and reading, by an RF module initialization accelerator, the configuration information from the non-volatile storage array when receiving a power-up instruction, and transmitting the read configuration information to the RF module, thereby initializing the RF module (S2). With the technical solution given in the present invention, the initialization of an RF module becomes much faster, and the power consumption of a wireless communication terminal can be reduced. In addition, the initialization of various RF modules can be supported, and meanwhile the hardware resources can be saved, thereby enhancing the extensibility of the system.

Abstract: The present invention is a system and method for digital watermarking, which discloses a system for digital watermarking, to add a watermark to an audio signal generated by a signal source. The system comprises: a spectrum modulator configured to perform spectrum modulation to a watermark bit and a pseudo noise signal to be embedded into the audio signal to generate a modulated signal; a distortion controller coupled to the signal source and the spectrum modulator and configured to shape the modulated signal based on the audio signal, so as to generate a shaped signal satisfying a predetermined distortion constraint; and an interference compensator coupled to the signal source and the distortion controller and configured to generate a compensation signal based on the audio signal, the pseudo noise signal, and the shaped signal, wherein the compensation signal is for compensating for interference to watermark decoding caused by the audio signal.

Abstract: A Digitial Radio Mondiale (DRM) receiver and demodulation method includes a programmable downsampler and a programmable N-point Fast Fourier Transform (FFT) to recover and demodulate the OFDM symbols in a received DRM-encoded RF signal. The received signal is digitally sampled at a rate operably integer downsampled to achieve a number N samples in the useful portion of the OFDM symbol for input to an N-point FFT, where N equal to a power of two. The downsampling rate and size (N-points) of the FFT depend on the DRM encoding and transmission parameters, notably the robustness mode and spectrum occupancy. This reduces the processing/computational requirements and the design complexity of the DRM receiver.

Abstract: A Digital Radio Mondiale (DRM) receiver and demodulation method includes an analog and digital separation filter for filtering and separating a DRM-encoded signal and a non DRM-encoded signal from a composite RF signal received at the receiver. The DRM receiver includes a programmable downsampler and a programmable N-point Fast Fourier Transform (FFT) to recover and demodulate the OFDM symbols in a received DRM-encoded RF signal. The received signal is digitally sampled at a rate operably integer downsampled to achieve a number N samples in the useful portion of the OFDM symbol for input to an N-point FFT, where N equal to a power of two. The downsampling rate and size (N-points) of the FFT depend on the DRM encoding and transmission parameters, notably the robustness mode and spectrum occupancy. The structure and operation of the receiver in this manner simplifies the design and reduces the required filter order of the analog and digital separation filter.

Abstract: A Digitial Radio Mondiale (DRM) receiver and demodulation method includes a programmable downsampler and a programmable N-point Fast Fourier Transform (FFT) to recover and demodulate the OFDM symbols in a received DRM-encoded RF signal. The received signal is digitally sampled at a rate operably integer downsampled to achieve a number N samples in the useful portion of the OFDM symbol for input to an N-point FFT, where N equal to a power of two. The downsampling rate and size (N-points) of the FFT depend on the DRM encoding and transmission parameters, notably the robustness mode and spectrum occupancy. This reduces the processing/computational requirements and the design complexity of the DRM receiver.