Patents by Inventor Huazi Jin

Huazi Jin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of surface self-nanocrystallization of metallic materials
    Patent number: 6926780
    Abstract: The present invention relates to a method of surface treatment of metallic materials, more particularly, to a method of the surface self-nanocrystallization of metallic materials by the bombarding of supersonic fine particles. The method comprises the step of bombarding the surface of metallic substrate material with fine particles at supersonic speed of 300-1200 m/s carried by a compressed gas, which is ejected from a nozzle. The present method can be used for the surface self-nanocrystallization of metallic parts with a complicated structure or a large area, and the nanometer layer obtained is homogeneous. In addition, it can be operated in a simple way with low energy consumption, low cost, high efficiency of production and high surface nanocrystallization rate of from 1 cm2 to 10 cm2/min.
    Type: Grant
    Filed: July 23, 2002
    Date of Patent: August 9, 2005
    Assignee: Institute of Metal Research
    Inventors: Tianying Xiong, Tiefan Li, Jie Wu, Huazi Jin, Minjie Wu, Jinsheng Chen, Ming Li
  • Method of surface self-nanocrystallization of metallic materials
    Publication number: 20030127160
    Abstract: The present invention relates to a method of surface treatment of metallic materials, more particularly, to a method of the surface self-nanocrystallization of metallic materials by the bombarding of supersonic fine particles. The method comprises the step of bombarding the surface of metallic substrate material with fine particles at supersonic speed of 300-1200 m/s carried by a compressed gas, which is ejected from a nozzle. The present method can be used for the surface self-nanocrystallization of metallic parts with a complicated structure or a large area, and the nanometer layer obtained is homogeneous. In addition, it can be operated in a simple way with low energy consumption, low cost, high efficiency of production and high surface nanocrystallization rate of from 1 cm2 to 10 cm2/min.
    Type: Application
    Filed: July 23, 2002
    Publication date: July 10, 2003
    Inventors: Tianying Xiong, Tiefan Li, Jie Wu, Huazi Jin, Minjie Wu, Jinsheng Chen, Ming Li