Patents by Inventor Hubert Enichlmair

Hubert Enichlmair has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11107848
    Abstract: The semiconductor device for detection of radiation comprises a semiconductor substrate (1) with a main surface (11), a dielectric layer (6) comprising at least one compound of a semiconductor material, an integrated circuit (2) including at least one component sensitive to radiation (3), a wiring (4) of the integrated circuit embedded in an intermetal layer (8) of the dielectric layer (6), an electrically conductive through-substrate via (5) contacting the wiring, and an optical filter element (7) arranged immediately on the dielectric layer above the component sensitive to radiation. The dielectric layer comprises a passivation layer (9) at least above the through-substrate via, the passivation layer comprises a dielectric material that is different from the intermetal layer (8), and the wiring is arranged between the main surface and the passivation layer.
    Type: Grant
    Filed: February 24, 2014
    Date of Patent: August 31, 2021
    Assignee: AMS AG
    Inventors: Hubert Enichlmair, Franz Schrank, Joerg Siegert
  • Patent number: 10976200
    Abstract: An optical sensing device comprises a photodetector array comprising at least one first photodetector and at least one second photodetector, the photodetector array being arranged on a semiconductor substrate. The optical sensing device further comprises a filter stack arranged on the substrate and covering the photodetector array. The filter stack comprises at least two first lower dielectric mirrors and at least two second lower dielectric mirrors, where a first and a second lower mirror are arranged above the first photodetector and a first and a second lower mirror are arranged above the second photodetector, and where the first lower mirrors have a different thickness in vertical direction which is perpendicular to the main plane of extension of the substrate than the second lower mirrors. The filter stack further comprises a spacer stack arranged on the first and second lower mirrors, and an upper dielectric mirror arranged on the spacer stack and covering the photodetector array.
    Type: Grant
    Filed: August 30, 2018
    Date of Patent: April 13, 2021
    Assignee: AMS AG
    Inventors: Hubert Enichlmair, Gerhard Eilmsteiner
  • Publication number: 20200400544
    Abstract: An apparatus for sensing particulate matter in a fluid includes a substrate; and an integrated circuit electrically connected to the substrate, the integrated circuit including a photodetector. The apparatus includes a filter assembly including a particle filter aligned with the photodetector, and a filter housing for the particle filter, the filter housing defining a flow path for fluid through the particle filter. The apparatus includes a light source electrically connected to the substrate and positioned to illuminate the particle filter.
    Type: Application
    Filed: December 13, 2018
    Publication date: December 24, 2020
    Inventors: Harald Etschmaier, Georg Roehrer, Anderson Singulani, Hubert Enichlmair, Jong-Mun Park, Alexander Bergmann, Paul Maierhofer
  • Publication number: 20200271516
    Abstract: An optical sensing device comprises a photodetector array comprising at least one first photodetector and at least one second photodetector, the photodetector array being arranged on a semiconductor substrate. The optical sensing device further comprises a filter stack arranged on the substrate and covering the photodetector array. The filter stack comprises at least two first lower dielectric mirrors and at least two second lower dielectric mirrors, where a first and a second lower mirror are arranged above the first photodetector and a first and a second lower mirror are arranged above the second photodetector, and where the first lower mirrors have a different thickness in vertical direction which is perpendicular to the main plane of extension of the substrate than the second lower mirrors. The filter stack further comprises a spacer stack arranged on the first and second lower mirrors, and an upper dielectric mirror arranged on the spacer stack and covering the photodetector array.
    Type: Application
    Filed: August 30, 2018
    Publication date: August 27, 2020
    Inventors: Hubert Enichlmair, Gerhard Eilmsteiner
  • Patent number: 10468541
    Abstract: A dielectric layer (2) is arranged on the main surface (10) of a semiconductor substrate (1), and a passivation layer (6) is arranged on the dielectric layer. A metal layer (3) is embedded in the dielectric layer above an opening (12) in the substrate, and a metallization (14) is arranged in the opening. The metallization contacts the metal layer and forms a through-substrate via to a rear surface (11) of the substrate. A layer or layer sequence (7, 8, 9) comprising at least one further layer is arranged on the passivation layer above the opening. In this way the bottom of the through-substrate via is stabilized. A plug (17) may additionally be arranged in the opening without filling the opening.
    Type: Grant
    Filed: December 12, 2014
    Date of Patent: November 5, 2019
    Assignee: ams AG
    Inventors: Franz Schrank, Sara Carniello, Hubert Enichlmair, Jochen Kraft, Bernhard Loeffler, Rainer Holzhaider
  • Patent number: 10453972
    Abstract: An integrated optical sensor comprises a semiconductor substrate (1), an integrated circuit (2), a dielectric layer (6), a wiring (4), a structured filter layer (7) and a diffuser (10). The semiconductor substrate (1) has a main surface (11) and the integrated circuit (2) is arranged in the substrate (1) at or near the main surface (11). Furthermore, the integrated circuit (2) comprises at least one light sensitive component (3). The dielectric layer (6) comprises at least one compound of the semiconductor material. The dielectric layer (6) is arranged on or above the main surface (11). The wiring (4) is arranged in the dielectric layer (6) and provides an electrical connection to the integrated circuit (2), i.e. the wiring is connected to the integrated circuit (2). The structured filter layer (7) is arranged on the dielectric layer (6) and faces the at least one light sensitive component (3), i.e. the diffusor (10) is positioned over the structured filter layer (7).
    Type: Grant
    Filed: December 4, 2015
    Date of Patent: October 22, 2019
    Assignee: ams AG
    Inventor: Hubert Enichlmair
  • Publication number: 20190237500
    Abstract: A 3D-Integrated optical sensor comprises a semiconductor substrate, an integrated circuit, a wiring, a filter layer, a transparent spacer layer, and an on-chip diffuser. The semiconductor substrate has a main surface. The integrated circuit comprises at least one light sensitive area and is arranged in the substrate at or near the main surface. The wiring provides an electrical connection to the integrated circuit and is connected to the integrated circuit. The wiring is arranged on or in the semiconductor substrate. The filter layer has a direction dependent transmission characteristic and is arranged on the integrated circuit. In fact, the filter layer at least covers the light sensitive area. The transparent spacer layer is arranged on the main surface and, at least partly, encloses the filter layer. A spacer thickness is arranged to limit a spectral shift of the filter layer. The on-chip diffuser is arranged on the transparent spacer layer.
    Type: Application
    Filed: June 2, 2017
    Publication date: August 1, 2019
    Inventors: Hubert Enichlmair, Martin SCHREMS, Gregor Toschkoff, Thomas Bodner, Mario Manninger
  • Publication number: 20180372546
    Abstract: An optical sensing device comprises a substrate carrying a first and a second photodetector stack comprises a band-pass filter, a decoupling layer arranged on the band-pass filter and a lower dielectric mirror arranged on the decoupling layer. The filter stack comprises a spacer stack with a primary spacer layer arranged on the lower dielectric mirror, comprising a first dielectric material and covering the photodetector array. The spacer stack comprises a first spacer layer comprising the first dielectric material, wherein a first segment of the first spacer layer is arranged on the primary spacer layer and covers the second photodetector but not the first photodetector. The filter stack comprises an upper dielectric mirror arranged on the spacer stack.
    Type: Application
    Filed: November 29, 2016
    Publication date: December 27, 2018
    Inventors: Hubert ENICHLMAIR, Gerhard EILMSTEINER
  • Publication number: 20180337291
    Abstract: An integrated optical sensor comprises a semiconductor substrate (1), an integrated circuit (2), a dielectric layer (6), a wiring (4), a structured filter layer (7) and a diffuser (10). The semiconductor substrate (1) has a main surface (11) and the integrated circuit (2) is arranged in the substrate (1) at or near the main surface (11). Furthermore, the integrated circuit (2) comprises at least one light sensitive component (3). The dielectric layer (6) comprises at least one compound of the semiconductor material. The dielectric layer (6) is arranged on or above the main surface (11). The wiring (4) is arranged in the dielectric layer (6) and provides an electrical connection to the integrated circuit (2), i.e. the wiring is connected to the integrated circuit (2). The structured filter layer (7) is arranged on the dielectric layer (6) and faces the at least one light sensitive component (3), i.e. the diffusor (10) is positioned over the structured filter layer (7).
    Type: Application
    Filed: December 4, 2015
    Publication date: November 22, 2018
    Inventor: Hubert ENICHLMAIR
  • Patent number: 10084004
    Abstract: A sensor (2) is arranged at a main surface (10) of a semiconductor substrate (1), and a filter (3) is arranged above the sensor. A through-substrate via (4) penetrates the substrate outside the region of the sensor. A semiconductor body is applied above the main surface and then partially removed at least in an area above the sensor. A portion of the semiconductor body remains above the through-substrate via as a frame layer (5). The filter is on a level with the frame layer.
    Type: Grant
    Filed: January 14, 2015
    Date of Patent: September 25, 2018
    Assignee: AMS AG
    Inventors: Hubert Enichlmair, Franz Schrank
  • Patent number: 9577001
    Abstract: The integrated imaging device comprises a substrate (1) with an integrated circuit (4), a cover (2), a cavity (6) enclosed between the substrate (1) and the cover (2), and a sensor (5) or an array of sensors (5) arranged in the cavity (6). A surface (11, 12) of the substrate (1) or the cover (2) opposite the cavity (6) has a structure (8) directing incident radiation. The surface structure (8) may be a plate zone or a Fresnel lens focusing infrared radiation and may be etched into the surface of the substrate or cover, respectively.
    Type: Grant
    Filed: April 15, 2014
    Date of Patent: February 21, 2017
    Assignee: AMS AG
    Inventors: Hubert Enichlmair, Rainer Minixhofer, Martin Schrems
  • Publication number: 20160343757
    Abstract: A sensor (2) is arranged at a main surface (10) of a semiconductor substrate (1), and a filter (3) is arranged above the sensor. A through-substrate via (4) penetrates the substrate outside the region of the sensor. A semiconductor body is applied above the main surface and then partially removed at least in an area above the sensor. A portion of the semiconductor body remains above the through-substrate via as a frame layer (5). The filter is on a level with the frame layer.
    Type: Application
    Filed: January 14, 2015
    Publication date: November 24, 2016
    Inventors: Hubert ENICHLMAIR, Franz SCHRANK
  • Publication number: 20160322519
    Abstract: A dielectric layer (2) is arranged on the main surface (10) of a semiconductor substrate (1), and a passivation layer (6) is arranged on the dielectric layer. A metal layer (3) is embedded in the dielectric layer above an opening (12) in the substrate, and a metallization (14) is arranged in the opening. The metallization contacts the metal layer and forms a through-substrate via to a rear surface (11) of the substrate. A layer or layer sequence (7, 8, 9) comprising at least one further layer is arranged on the passivation layer above the opening. In this way the bottom of the through-substrate via is stabilized. A plug (17) may additionally be arranged in the opening without filling the opening.
    Type: Application
    Filed: December 12, 2014
    Publication date: November 3, 2016
    Inventors: Franz SCHRANK, Sara CARNIELLO, Hubert ENICHLMAIR, Jochen KRAFT, Bernhard LOEFFLER, Rainer HOLZHAIDER
  • Publication number: 20160104741
    Abstract: The integrated imaging device comprises a substrate (1) with an integrated circuit (4), a cover (2), a cavity (6) enclosed between the substrate (1) and the cover (2), and a sensor (5) or an array of sensors (5) arranged in the cavity (6). A surface (11, 12) of the substrate (1) or the cover (2) opposite the cavity (6) has a structure (8) directing incident radiation. The surface structure (8) may be a plate zone or a Fresnel lens focusing infrared radiation and may be etched into the surface of the substrate or cover, respectively.
    Type: Application
    Filed: April 15, 2014
    Publication date: April 14, 2016
    Applicant: ams AG
    Inventors: Hubert ENICHLMAIR, Rainer MINIXHOFER, Martin SCHREMS
  • Publication number: 20160020238
    Abstract: The semiconductor device for detection of radiation comprises a semiconductor substrate (1) with a main surface (11), a dielectric layer (6) comprising at least one compound of a semiconductor material, an integrated circuit (2) including at least one component sensitive to radiation (3), a wiring (4) of the integrated circuit embedded in an intermetal layer (8) of the dielectric layer (6), an electrically conductive through-substrate via (5) contacting the wiring, and an optical filter element (7) arranged immediately on the dielectric layer above the component sensitive to radiation. The dielectric layer comprises a passivation layer (9) at least above the through-substrate via, the passivation layer comprises a dielectric material that is different from the intermetal layer (8), and the wiring is arranged between the main surface and the passivation layer.
    Type: Application
    Filed: February 24, 2014
    Publication date: January 21, 2016
    Inventors: Hubert Enichlmair, Franz Schrank, Joerg Siegert
  • Patent number: 8796743
    Abstract: In order to detect light with in particular a high blue component, the inversion zone and the space charge zone of a CMOS-like structure are used. In conjunction with an at least partly transparent gate electrode, in particular a transparent conductive oxide or a patterned gate electrode, it becomes possible to absorb the short-wave component of incident light within the inversion zone and to reliably conduct away the generated charge carrier pairs to first and second contacts. During operation, a control voltage is applied to the gate electrode with a magnitude that generates a continuous inversion zone below the optionally patterned gate electrode.
    Type: Grant
    Filed: January 26, 2006
    Date of Patent: August 5, 2014
    Assignee: AMS AG
    Inventors: Hubert Enichlmair, Jochen Kraft, Georg Röhrer
  • Patent number: 8592910
    Abstract: A semiconductor body includes a protective structure. The protective structure (10) includes a first and a second region (11, 12) which have a first conductivity type and a third region (13) that has a second conductivity type. The second conductivity type is opposite the first conductivity type. The first and the second region (11, 12) are arranged spaced apart in the third region (13), so that a current flow from the first region (11) to the second region (12) is made possible for the limiting of a voltage difference between the first and the second region (11, 12). The protective structure includes an insulator (14) that is arranged on the semiconductor body (9) and an electrode (16) that is constructed with floating potential and is arranged on the insulator (14).
    Type: Grant
    Filed: September 16, 2009
    Date of Patent: November 26, 2013
    Assignee: AMS AG
    Inventor: Hubert Enichlmair
  • Patent number: 8383488
    Abstract: A method, in which a first isolating trench, filled with a dielectric material, and a second conducting trench, filled with an electrically conductive material, can be produced. To this end, the first and second trenches are etched with different trench widths, so that the first trench is filled completely with the dielectric material after a deposition of a dielectric layer over the entire surface with the edges covered, whereas the wider second trench is covered by the dielectric layer only on the inside walls. By anisotropic back-etching of the dielectric layer, the semiconductor substrate is exposed at the bottom of the second trench. Subsequently, the second trench is filled with an electrically conductive material and then represents a low-ohmic connection from the substrate surface to the buried structure located below the second trench.
    Type: Grant
    Filed: October 22, 2007
    Date of Patent: February 26, 2013
    Assignee: austriamicrosystems AG
    Inventors: Hubert Enichlmair, Martin Schrems, Franz Schrank
  • Patent number: 8227882
    Abstract: A light-sensitive component which has a semiconductor junction between a thin relatively highly doped epitaxial layer and a relatively lightly doped semiconductor substrate. Outside a light incidence window, an insulating layer is arranged between epitaxial layer and semiconductor substrate. In this case, the thickness of the epitaxial layer is less than 50 nm, with the result that a large proportion of the light quanta incident in the light incidence window can be absorbed in the lightly doped semiconductor substrate.
    Type: Grant
    Filed: January 31, 2006
    Date of Patent: July 24, 2012
    Assignee: austriamicrosystems AG
    Inventors: Hubert Enichlmair, Jochen Kraft, Bernhard Löffler, Gerald Meinhardt, Georg Röhrer, Ewald Wachmann
  • Patent number: 8227318
    Abstract: A method of forming an isolation region is provided that in one embodiment substantially reduces divot formation. In one embodiment, the method includes providing a semiconductor substrate, forming a first pad dielectric layer on an upper surface of the semiconductor substrate and forming a trench through the first pad dielectric layer into the semiconductor substrate. In a following process sequence, the first pad dielectric layer is laterally etched to expose an upper surface of the semiconductor substrate that is adjacent the trench, and the trench is filled with a trench dielectric material, wherein the trench dielectric material extends atop the upper surface of the semiconductor substrate adjacent the trench and abuts the pad dielectric layer.
    Type: Grant
    Filed: November 19, 2009
    Date of Patent: July 24, 2012
    Assignee: International Business Machines Corporation
    Inventors: Max Levy, Natalie Feilchenfeld, Richard Phelps, BethAnn Rainey, James Slinkman, Steven H. Voldman, Michael Zierak, Hubert Enichlmair, Martin Knaipp, Bernard Loeffler, Rainer Minixhofer, Jong-Mun Park, Georg Roehrer