Abstract: Surface-emitting semiconductor laser chip (1) comprising a carrier (20), a layer stack (10) arranged on the carrier (20) and having a layer plane (L) extending perpendicularly to the stacking direction (R), a front side contact (310) and a rear side contact (320), in which in operation a predetermined distribution of a current density (I) is achieved by means of current constriction in the layer stack (10), wherein in the carrier (20) an electrical through-connection (200) is provided, which extends from a bottom surface (20a) of the carrier (20) facing away from the layer stack (10) to a surface of the carrier (20) facing the layer stack (10), and the distribution of the current density (I) is significantly influenced by the shape and size of the cross-section of the through-connection (200) parallel to the layer plane (L) on the surface facing the layer stack.

Abstract: In an embodiment a semiconductor emitter includes a semiconductor layer sequence having a plurality of active zones, each active zone including at least one quantum well layer and at least two barrier layers between which the at least one quantum well layer is embedded, and at least one tunnel diode located along a growth direction of the semiconductor layer sequence between adjacent active zones, wherein a thickness of the at least one tunnel diode is at most 40 nm, and wherein a distance between adjacent barrier layers of adjacent active zones, facing the at least one tunnel diode, is at most 50 nm.

Abstract: A surface-emitting semiconductor laser includes a first semiconductor layer of a first conductivity type, an active zone which is suitable for generating electromagnetic radiation, an ordered photonic structure, and a second semiconductor layer of a second conductivity type. The active zone is arranged between the first and second semiconductor layers. The ordered photonic structure is formed in the first semiconductor layer, and a part of the first semiconductor layer is adjacent to both sides of the ordered photonic structure. Alternatively, the ordered photonic structure is arranged in an additional semiconductor layer between the active zone and the second semiconductor layer. A part of the additional semiconductor layer is arranged between the ordered photonic structure and the second semiconductor layer.

Abstract: A radiation-emitting semiconductor device (1) is specified, comprising a semiconductor body (2) having an active region (20) provided for generating radiation, a carrier (3) on which the semiconductor body is arranged and an optical element (4), wherein the optical element is attached to the semiconductor body by a direct bonding connection. Furthermore, a method for producing of radiation-emitting semiconductor devices is specified.

Abstract: An optoelectronic component includes an optoelectronic semiconductor chip configured to emit electromagnetic radiation; an optically effective element arranged such that electromagnetic radiation emitted by the optoelectronic semiconductor chip passes through the optically effective element; and a housing, wherein the optoelectronic semiconductor chip is arranged in a cavity of the housing, the optically effective element includes a carrier, a first optically effective structure arranged on a top side of the carrier, and a cover arranged above the first optically effective structure.

Abstract: In an embodiment a semiconductor laser includes a semiconductor body having a plurality of resonator regions, wherein the resonator regions are arranged side by side along a lateral direction, each resonator region having an active region configured to generate radiation, wherein the semiconductor body extends between two side faces, wherein the resonator regions are configured to emit laser radiation at one of the two side faces, and a layer sequence attached to at least one of the side faces, wherein the layer sequence forms at least part of a resonator mirror for at least one resonator region.

Abstract: An FMCW LIDAR system includes a laser which emits a laser beam and a radiation source which comprises a frequency comb generator. The semiconductor laser may be a VCSEL. The frequency comb generator generates a frequency comb from the laser beam. A beam bundle comprising a plurality of laser beams, each of which has a respective wavelength of ?1, ?2, ?3, . . . ?n, or laser mode, is generated from the laser beam having a wavelength ?0. The generated beam bundle is fed to a beam splitter which allows one part of each individual laser beam to pass in the direction of the object to be measured. Another part of each individual laser beam is allowed to pass as a reference beam in the direction of an assembly of detector elements. The system may further include a first grating and a second grating.

Abstract: A radiation-emitting semiconductor device (1) is specified, comprising a semiconductor body (2) having an active region (20) provided for generating radiation, a carrier (3) on which the semiconductor body is arranged and an optical element (4), wherein the optical element is attached to the semiconductor body by a direct bonding connection. Furthermore, a method for producing of radiation-emitting semiconductor devices is specified.

Abstract: A planar light circuit comprises a substrate and a first pixel. The first pixel comprises a first number N of laser diodes, a first waveguide located on the substrate, a first number N of inlets which couple the first number N of laser diodes to the first waveguide and a first outlet. The first waveguide couples the first number N of inlets to the first outlet. An arrangement comprises the planar light circuit. The arrangement is realized as data glasses.

Abstract: Disclosed is a method for producing a radiation-emitting semiconductor chip including the steps:—providing a semiconductor layer sequence having an active region which is designed for generating electromagnetic radiation,—producing a first recess in the semiconductor layer sequence, which fully penetrates the active region,—producing a first structure in the first recess, wherein—at least a lateral surface of the first structure facing the active region extends obliquely to at least a first lateral surface of the semiconductor layer sequence, and—the first structure is spaced apart in lateral directions from the active region. Also disclosed is a radiation-emitting semiconductor chip.

Abstract: An optoelectronic semiconductor component (10) includes a semiconductor stack (109) in which a surface-emitting laser diode (103) and a photodetector (105) are placed vertically on top of one another. The optoelectronic semiconductor component (10) additionally includes an electric power source (149) that is adapted to modify a current intensity applied to the surface-emitting laser diode (103), thus allowing an emission wavelength to be modified.

Abstract: An optical measurement system may include a device for emitting electromagnetic radiation, comprising a plurality of laser elements. The optical measurement system may include an optical element, comprising a first waveguide and adapted to transmit a first partial beam of irradiated electromagnetic radiation and to incouple a second partial beam of the electromagnetic radiation into the first waveguide at a first position and to outcouple the second partial beam from the first waveguide at a second position. The optical measurement system moreover comprises a plurality of detectors for detecting signals which are generated by superimposing electromagnetic radiation reflected by an object and electromagnetic radiation outcoupled from the first waveguide.

Abstract: An optical measuring system includes a multiplicity of apparatuses for emitting electromagnetic radiation, said apparatuses being configured to emit a signal simultaneously. The optical measuring system further includes a modulation device for altering a frequency of the respectively emitted electromagnetic radiation and a multiplicity of detectors which are suitable for detecting a superposition signal, which comprises the emitted electromagnetic radiation and electromagnetic radiation reflected at an object, and a measuring device, wherein the measuring device is suitable for being successively connected to each individual detector of the multiplicity of detectors.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: A laser source may include a laser diode, a modulation device, and a feedback device. The modulation device may include an electric power source and may be suitable for modifying a current intensity applied to the laser diode, which may modify an emission frequency of the laser diode. The feedback device may be suitable for modifying a current intensity applied to the laser diode by the electric power source as a function of the electromagnetic radiation emitted by the laser diode.

Abstract: Provided is a measuring system (1), which comprises a sender unit (10) with at least one individually operable LED lighting unit (12) with a luminous area which has a characteristic longitudinal extent (107) of less than or equal to 100 ?m and/or a surface area of less than or equal to 104 ?m2, wherein the LED lighting unit (12) is configured to emit at least one light pulse as a sender signal (11) during operation, and comprises the one receiver unit (20) with at least one detector unit (22) for receiving a return signal (21), which comprises at least a part of the sender signal (11) reflected by an external object. Furthermore, use of at least one individually operable LED lighting unit as a sender unit in a measuring system, a method for operating a measuring system and a lighting source having a measuring system are provided.

Abstract: An optoelectronic semiconductor device comprises a plurality of laser devices. Each of the laser devices is configured to emit electromagnetic radiation. The laser devices are horizontally arranged. A first laser device of the plurality of laser devices is configured to emit electromagnetic radiation having a first wavelength different from the wavelength of a further laser device of the plurality of laser devices. A difference between the first wavelength and the wavelength of the further laser device is less than 20 nm.

Abstract: A display device includes pixels-arranged in an array with rows and columns, column lines, each connected to the pixels of one of the columns, row lines, each connected to the pixels of one of the rows, and a control unit connected to the column lines and the row lines. The control unit is configured to generate a column pulse for a selected one of the column lines and generate a data signal for a selected row line from the row lines. The data signal includes a set pulse which, when the pixel is set to a radiating state, is applied at least in part to the pixel connected to the selected column and row line when the column pulse is applied to the pixel, and drives the pixel such that a light emission of the pixel depends on the time offset between the column pulse and the set pulse.

Abstract: In an embodiment a laser diode includes a surface emitting semiconductor laser configured to emit electromagnetic radiation and an optical element arranged downstream of the semiconductor laser in a radiation direction, wherein the optical element includes a diffractive structure or a meta-optical structure or a lens structure, wherein the optical element and the semiconductor laser are cohesively connected to each other, and wherein the semiconductor laser and the optical element are integrated with the laser diode.

Abstract: A semiconductor device includes a first semiconductor body including a substrate having a first thickness, wherein the first semiconductor body includes a first active zone that generates or receives radiation, and a second semiconductor body having a second thickness smaller than the first thickness and including a tear-off point is arranged on the substrate and connected in an electrically conducting manner to the first semiconductor body, wherein the second semiconductor body includes a second active zone that generates or receives radiation, and the second active zone generates radiation and the first active zone detects the radiation, and the first semiconductor body includes contacts on its underside for connection to the semiconductor device.