Abstract: The invention relates to a detector element which has the following features: an epitaxial semiconductor layer sequence including at least two active layers which are designed to absorb electromagnetic radiation with a wavelength L1, wherein the epitaxial semiconductor layer sequence has a first main surface and a second main surface lying opposite the first main surface, each surface being designed to couple in and couple out electromagnetic radiation, and at least three electric connection contacts which are designed to electrically contact the active layers, an electric connection contact being arranged between two active layers. The invention additionally relates to a lidar module and to a method for operating a lidar module.

Abstract: A radiation-emitting semiconductor device (1) is specified, comprising a semiconductor body (2) having an active region (20) provided for generating radiation, a carrier (3) on which the semiconductor body is arranged and an optical element (4), wherein the optical element is attached to the semiconductor body by a direct bonding connection. Furthermore, a method for producing of radiation-emitting semiconductor devices is specified.

Abstract: A method of manufacturing a semiconductor device includes epitaxially growing a sacrificial layer over a GaN substrate, epitaxially growing a first semiconductor layer over the sacrificial layer and forming a first layer over a first main surface of the first semiconductor layer, the first main surface being on a side of the first semiconductor layer remote from the GaN substrate. The method further includes forming a fluid channel or trench extending through the first layer and the first semiconductor layer to the sacrificial layer, etching the sacrificial layer, including introducing an etchant into the fluid channel or trench, to remove the GaN substrate and forming a second dielectric layer over a second main surface of the first semiconductor layer.

Abstract: The invention relates to an illumination device having a housing with a light-exit region and an assembly element arranged below the light-exit region. A conversion element is arranged on the assembly element and designed to convert pump light into emission light in a surface region of the conversion element and to emit said emission light via the surface region. Two surface-emitting laser apparatuses for producing the pump light are arranged opposite one another on the assembly region and are arranged laterally offset to the light-exit region and arranged at a distance from the conversion element and at a distance therefrom. A reflector element connected to the housing is arranged above laser apparatuses and designed to reflect the pump light emitted by the laser apparatuses onto the surface region. The assembly element serves the purpose of heat dissipation for the heat produced and, at the same time, substantial thermal decoupling from the conversion element.

Abstract: The invention relates to a surface-emitting semiconductor laser, including a first semiconductor layer of a first conductivity type, the first semiconductor layer being structured forming a mesa, an active zone for generating electromagnetic radiation and a second semiconductor layer of a second conductivity type. The first semiconductor layer, the active zone and the second semiconductor layer are arranged on top of one another forming a semiconductor layer stack. The surface-emitting semiconductor laser further comprises a sheath layer which adjoins a lateral wall of the mesa.

Abstract: In an embodiment an adhesive transfer stamp for transferring semiconductor chips includes a volume region including an electrically insulating material, at least one adhesive surface configured to receive a semiconductor chip and an electrically conductive element configured to electrically conductively connected to a ground conductor during operation and to dissipate electrical charges from the semiconductor chip to the ground conductor, wherein the volume region is embodied as a solid body, and wherein the volume region has at least one stepped structure.

Abstract: A light-emitting window element includes a transparent first carrier layer, a transparent second carrier layer, a substrate with a plurality of light-emitting semiconductor chips arranged thereon, and an optical layer having an adjustable transparency. The substrate with the plurality of light-emitting semiconductor chips and the optical layer are arranged between the first and second carrier layers, and the first and second carrier layers, the substrate with the plurality of light-emitting semiconductor chips and the optical layer form a laminate composite.

Abstract: An optoelectronic component includes a housing. An optical element and a semiconductor laser are arranged along a common optical axis within the housing. The semiconductor laser is designed to generate, by means of a laser process, a light beam having a diffraction-limited divergence such that the light beam is substantially collimated on the optical element.

Abstract: The disclosed optoelectronic semiconductor chip includes a carrier, a semiconductor layer sequence on the carrier having at least one active zone for generating radiation, a layer of high optical refractive index on an output coupling facet of the semiconductor layer sequence for the output coupling of radiation, and a coating of low optical refractive index directly on an outer side of the layer of high optical refractive index for the total internal reflection of the radiation, wherein the semiconductor layer sequence is configured to guide the radiation in the active zone perpendicularly to a growth direction of the semiconductor layer sequence, and the layer of high optical refractive index is configured to deflect the radiation at the outer side parallel to the growth direction.

Abstract: An optoelectronic component includes a stacked arrangement including a photonic crystal and a gain medium. The gain medium includes a layer sequence composed of two quantum wells and at least one tunnel diode and is set up to emit an electromagnetic wave. The photonic crystal is electromagnetically coupled to the gain medium. The stacked arrangement is disposed on a substrate. Alternatively or additionally, the gain medium includes at least one quantum well. The photonic crystal is structured in a dielectric layer and electromagnetically coupled to the gain medium.

Abstract: In an embodiment a semiconductor emitter includes a semiconductor layer sequence having a plurality of active zones, each active zone including at least one quantum well layer and at least two barrier layers between which the at least one quantum well layer is embedded, and at least one tunnel diode located along a growth direction of the semiconductor layer sequence between adjacent active zones, wherein a thickness of the at least one tunnel diode is at most 40 nm, and wherein a distance between adjacent barrier layers of adjacent active zones, facing the at least one tunnel diode, is at most 50 nm.

Abstract: A PWM controlled current source includes a selection input, a modulation input, a switchable current source which can be switched by means of a signal at a control terminal and whose current output is configured for connection to a load, and an inverter circuit including an input node and an output coupled to the control terminal. The inverter circuit has a capacitance conditioned by elements of the inverter circuit. A start signal can be supplied to the input node in dependence on a selection signal at the selection input, which controls the switchable current source via the inverter circuit. The PWM controlled current source also includes a voltage-to-current converter that generates a current derived from a modulation signal at the modulation input and supplies it to the input node. The supplied current disconnects the switchable current source after a time period predetermined by the conditioned capacitance.

Abstract: A driver circuit may include a first inductor with a first terminal coupled to a first voltage terminal and a first switch with a first and a second terminal. The first terminal of the first switch is coupled to a second terminal of the first inductor via a first node and the second terminal of the first switch is coupled to a second voltage terminal. Moreover, the driver circuit may include a diode with a first terminal coupled to the first node, an output terminal, and a first capacitor with a first electrode coupled to a second terminal of the diode and a second electrode coupled to the output terminal.

Abstract: In at least one embodiment, the optoelectronic semiconductor chip including a semiconductor layer sequence, in which there is at least one active zone for generating radiation; and a first electrode and a second electrode, with which the semiconductor layer sequence is in electrical contact; wherein the semiconductor layer sequence has, in the region of the active zone, at least one obliquely extending facet designed for a beam deflection of the radiation; wherein the first electrode and the second electrode are on the same mounting side of the semiconductor layer sequence as the at least one obliquely extending facet, and the mounting side is a main side of the semiconductor layer sequence; and wherein the radiation is coupled out on an emission side of the semiconductor layer sequence opposite from the mounting side.

Abstract: Surface-emitting semiconductor laser chip (1) comprising a carrier (20), a layer stack (10) arranged on the carrier (20) and having a layer plane (L) extending perpendicularly to the stacking direction (R), a front side contact (310) and a rear side contact (320), in which in operation a predetermined distribution of a current density (I) is achieved by means of current constriction in the layer stack (10), wherein in the carrier (20) an electrical through-connection (200) is provided, which extends from a bottom surface (20a) of the carrier (20) facing away from the layer stack (10) to a surface of the carrier (20) facing the layer stack (10), and the distribution of the current density (I) is significantly influenced by the shape and size of the cross-section of the through-connection (200) parallel to the layer plane (L) on the surface facing the layer stack.

Abstract: In an embodiment a semiconductor emitter includes a semiconductor layer sequence having a plurality of active zones, each active zone including at least one quantum well layer and at least two barrier layers between which the at least one quantum well layer is embedded, and at least one tunnel diode located along a growth direction of the semiconductor layer sequence between adjacent active zones, wherein a thickness of the at least one tunnel diode is at most 40 nm, and wherein a distance between adjacent barrier layers of adjacent active zones, facing the at least one tunnel diode, is at most 50 nm.

Abstract: A surface-emitting semiconductor laser includes a first semiconductor layer of a first conductivity type, an active zone which is suitable for generating electromagnetic radiation, an ordered photonic structure, and a second semiconductor layer of a second conductivity type. The active zone is arranged between the first and second semiconductor layers. The ordered photonic structure is formed in the first semiconductor layer, and a part of the first semiconductor layer is adjacent to both sides of the ordered photonic structure. Alternatively, the ordered photonic structure is arranged in an additional semiconductor layer between the active zone and the second semiconductor layer. A part of the additional semiconductor layer is arranged between the ordered photonic structure and the second semiconductor layer.

Abstract: A radiation-emitting semiconductor device (1) is specified, comprising a semiconductor body (2) having an active region (20) provided for generating radiation, a carrier (3) on which the semiconductor body is arranged and an optical element (4), wherein the optical element is attached to the semiconductor body by a direct bonding connection. Furthermore, a method for producing of radiation-emitting semiconductor devices is specified.

Abstract: An optoelectronic component includes an optoelectronic semiconductor chip configured to emit electromagnetic radiation; an optically effective element arranged such that electromagnetic radiation emitted by the optoelectronic semiconductor chip passes through the optically effective element; and a housing, wherein the optoelectronic semiconductor chip is arranged in a cavity of the housing, the optically effective element includes a carrier, a first optically effective structure arranged on a top side of the carrier, and a cover arranged above the first optically effective structure.

Abstract: In an embodiment a semiconductor laser includes a semiconductor body having a plurality of resonator regions, wherein the resonator regions are arranged side by side along a lateral direction, each resonator region having an active region configured to generate radiation, wherein the semiconductor body extends between two side faces, wherein the resonator regions are configured to emit laser radiation at one of the two side faces, and a layer sequence attached to at least one of the side faces, wherein the layer sequence forms at least part of a resonator mirror for at least one resonator region.