Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: In an embodiment a method includes providing a semiconductor body having a first region of a first conductivity type, a second region and an active region for producing electromagnetic radiation arranged between the first and the second region, forming a mask on the second region, forming a hole in the mask so that a surface of the second region is exposed; and growing a mesa structure of a semiconductor material on the exposed surface of the second region in the hole of the mask, wherein the mesa structure is at least partially of a second conductivity type being different from the first conductivity type, and wherein a height of the mesa structure is at most 50 nm.

Abstract: An optoelectronic device, in particular for the detection of obstacles and/or for distance measurement, may include a transmitting device for emitting laser beams. The transmitting device may include an array of pixels where each pixel of the pixel array comprises at least one laser, such as an optoelectronic laser, e.g. a VCSEL. The pixels of the pixel array may be divided into several sets of pixels, and the transmitting device may be configured to operate the sets of pixels in different, successive time intervals.

Abstract: An optoelectronic semiconductor laser component may include at least two laser units. The semiconductor laser component may have an output coupling surface configured to generate electromagnetic radiation in the semiconductor laser component. Each laser unit may include a laser resonator having a resonator axis, an output coupling mirror and a first and a second resonator mirror with a primary section of the resonator axis running laterally therebetween. The output coupling mirror may be formed by a partial region of the output coupling surface. Along the primary section of the resonator axis at least one contact strip is arranged on the output coupling surface, and extends to a metallic connection surface. The laser units may be aligned in such a way that the primary sections of the resonator axes run parallel to one another and the output coupling mirrors face one another.

Abstract: A semiconductor laser includes a horizontal laser element including a first semiconductor layer arrangement having a first active zone for generating radiation. The horizontal laser element furthermore includes a first optical resonator extending in a direction parallel to a first main surface of the first semiconductor layer arrangement. Lateral boundaries of the first semiconductor layer arrangement run obliquely, such that electromagnetic radiation generated is reflectable in a direction of the first main surface of the first semiconductor layer arrangement. The semiconductor laser furthermore includes a vertical laser element having a second optical resonator extending in a direction perpendicular to the first main surface of the first semiconductor layer arrangement.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: A laser source may include a laser diode, a modulation device, and a feedback device. The modulation device may include an electric power source and may be suitable for modifying a current intensity applied to the laser diode, which may modify an emission frequency of the laser diode. The feedback device may be suitable for modifying a current intensity applied to the laser diode by the electric power source as a function of the electromagnetic radiation emitted by the laser diode.

Abstract: Disclosed is a method for producing a radiation-emitting semiconductor chip including the steps: —providing a semiconductor layer sequence having an active region which is designed for generating electromagnetic radiation, —producing a first recess in the semiconductor layer sequence, which fully penetrates the active region, —producing a first structure in the first recess, wherein—at least a lateral surface of the first structure facing the active region extends obliquely to at least a first lateral surface of the semiconductor layer sequence, and—the first structure is spaced apart in lateral directions from the active region. Also disclosed is a radiation-emitting semiconductor chip.

Abstract: The invention relates to a semiconductor laser comprising a semiconductor layer arrangement, having an active zone for radiation generation, as well as comprising a first resonator mirror, a second resonator mirror and a resonator arranged between the first and the second resonator mirror, which ends in a direction parallel to a main surface of the semiconductor layer arrangement. The semiconductor laser also comprises a first wavelength-selective absorption element which is arranged between the semiconductor layer arrangement and the first resonator mirror.

Abstract: The invention relates to various aspects of an optoelectronic component or an arrangement comprising such a component for various applications, in particular in the automotive sector and for visual displays. The arrangements are characterized by simple manufacture and fast switching times.

Abstract: According to embodiments, a semiconductor laser comprises a semiconductor layer stack, which comprises an active zone for generating radiation. The semiconductor laser also comprises a first resonator mirror, a second resonator mirror, and an optical resonator, which is arranged between the first and second resonator mirrors and extends in a direction parallel to a main surface of the semiconductor layer stack. A reflectance R1 of the first resonator mirror is wavelength-dependent, so that R1 or a product R of R1 and the reflectance R2 of the second resonator mirror in a wavelength range decreases from a target wavelength ?0 of the laser to ?0+?? from a value R0, wherein ?? is selected as a function of a temperature-dependent shift in an emission wavelength.

Abstract: A composite component, a device, and method for producing the composite component including a plurality of optical components, a removable sacrificial layer, a retaining structure and a common intermediate carrier are provided, wherein the optical components each have an optical element for shaping a light beam and the sacrificial layer is arranged in the vertical direction at least in places between the intermediate carrier and the optical components. The retaining structure includes retaining elements, wherein the retaining structure and the sacrificial layer form a mechanical connection between the intermediate carrier and the optical components. The optical components are mechanically connected to the intermediate carrier only via the retaining structure, wherein the retaining elements are formed in such a way that under mechanical load they release the optical components so that the optical components are formed to be detachable from the intermediate carrier and thus transferable.

Abstract: An optoelectronic device comprises an at least partially transparent intermediate layer, in particular a transparent foil, and a plurality of optoelectronic light sources arranged on or embedded in the intermediate layer, and at least one of the following: a preferably non-transparent top layer, in particular a coloured foil, arranged on an upper surface of the intermediate layer, the top layer comprises a plurality of apertures which are aligned with the light sources, so that light from a light source can be radiated to the front through the aperture which is aligned with the light source, a filtering layer, in particular configured to operate as a neutral density filter, arranged on an upper surface of the top layer or the upper surface of the intermediate layer, a non-transparent or at least partially transparent background layer, in particular a coloured foil, arranged on a bottom surface of the intermediate layer.

Abstract: The invention related to an optoelectronic device (10) comprising a semiconductor layer stack (109), in which a surface-emitting laser diode is formed. The semiconductor layer stack (109) comprises a first aperture stop (115). A dimension of the first aperture stop (115) in a first horizontal direction is smaller than 50 ?m and smaller than the dimension of the first aperture stop (115) in a second horizontal direction.

Abstract: An optoelectronic device, in particular a display device, comprises: at least one optoelectronic light source, an at least partially transparent front layer, an at least partially transparent support layer, wherein the light source is arranged between the front layer and the support layer, wherein a front side of the light source faces the front layer and a rear side of the light source faces the support layer, and wherein a limiting device is provided in a circumferential direction around the light source, wherein the limiting device limits a spatial region, in which the light source emits light such that total internal reflection of the emitted light, in particular at an interface between the front layer and the outside, is avoided or at least reduced.

Abstract: The invention relates to an optoelectronic semiconductor laser component. The optoelectronic semiconductor laser component includes an epitaxial semiconductor layer sequence having an active region which is designed to generate first electromagnetic radiation in a first wavelength range. The optoelectronic semiconductor laser component further includes a photonic semiconductor layer which forms a two-dimensional photonic crystal and is designed to form a resonator for the first electromagnetic radiation, and a conversion element which is designed to convert the first electromagnetic radiation into second electromagnetic radiation in a second wavelength range. The emission direction is oriented transversely to the main plane of extent of the epitaxial semiconductor layer sequence. The first electromagnetic radiation exits from the photonic semiconductor layer in the emission direction. The first wavelength range is in the blue or ultraviolet spectral range.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: According to an aspect described herein, a device is proposed for electronically driving an LED comprising a data signal line, a threshold signal line, and a select signal line. Further provided is an LED electrically connected in series with a dual-gate transistor and together therewith between first and second potential terminals. A first control gate of the dual gate transistor is connected to the threshold line. The device also includes a select latch circuit comprising a charge latch connected to a second control gate of the dual gate transistor and to a current line contact of the dual gate transistor, and a control transistor comprising a control terminal connected to the select signal line.

Abstract: A detector is provided which includes at least the following features: a substrate; and at least a first detector element and a second detector element, which are arranged laterally next to one another on a main surface of the substrate, wherein each of the detector elements includes an active semiconductor layer configured for converting electromagnetic radiation having a wavelength ? into an electrical signal, each of the detector elements includes a first main surface and a second main surface opposite the first main surface, and the first main surface and the second main surface are each configured for coupling in and for coupling out electromagnetic radiation of wavelength ?. Furthermore, a lidar module and a method for operating a lidar module are specified.

Abstract: The invention relates to various aspects of an optoelectronic component or an arrangement comprising such a component for various applications, in particular in the automotive sector and for visual displays. The arrangements are characterized by simple manufacture and fast switching times.