Abstract: A surface-emitting semiconductor laser includes a first semiconductor layer of a first conductivity type, an active zone which is suitable for generating electromagnetic radiation, an ordered photonic structure, and a second semiconductor layer of a second conductivity type. The active zone is arranged between the first and second semiconductor layers. The ordered photonic structure is formed in the first semiconductor layer, and a part of the first semiconductor layer is adjacent to both sides of the ordered photonic structure. Alternatively, the ordered photonic structure is arranged in an additional semiconductor layer between the active zone and the second semiconductor layer. A part of the additional semiconductor layer is arranged between the ordered photonic structure and the second semiconductor layer.

Abstract: The invention relates to an oscillator arrangement for generating THz radiation with an active laser layer structure based on a semiconductor material for emitting laser light of at least one wavelength, the main emission direction of which is substantially perpendicular to a main emission surface. A 2D grating structure which is arranged substantially parallel to the main emission surface, interacts with the active laser layer structure, such that the active laser layer structure is excited to form two laser modes of different frequency The oscillator arrangement further includes a mixer structure arranged in the emission direction, which is designed to form a difference signal from the two laser modes, and a downstream absorption element which is non-transparent for the two laser modes.

Abstract: In an embodiment a method includes providing a functional semiconductor wafer having an epitaxial semiconductor layer sequence with a plurality of chip regions, wherein the epitaxial semiconductor layer sequence is arranged on a growth substrate and a sacrificial layer is arranged at least between the chip regions and the growth substrate, providing a carrier wafer, bonding the functional semiconductor wafer and the carrier wafer together such that a wafer compound is achieved, generating grooves between the chip regions through the growth substrate and the sacrificial layer such that the sacrificial layer is accessible through the grooves, arranging the wafer compound and a second ECE contact in an electrochemical etchant, and electrochemical etching the sacrificial layer by applying an ECE voltage between a first ECE contact and the second ECE contact.

Abstract: The invention relates to a laser light source (10), comprising an arrangement (120) of surface-emitting semiconductor lasers (1251, 1252, . . . 125n) to which a voltage is applied such that an operating current is below the threshold current and an intrinsic emission of the surface-emitting semiconductor laser is prevented. The laser light source also comprises a first semiconductor laser (100) which emits radiation (110) that enters the surface-emitting semiconductor laser such that induced emission takes place via the injection locking mechanism and the individual surface-emitting semiconductor lasers emit laser light having the same wavelength and polarisation direction as the irradiated radiation (110). The emission frequency of the first semiconductor laser can be changed by changing the operating current.

Abstract: A laser system may include a semiconductor laser configured to emit laser radiation in continuous wave operation at M modes having differing angular frequencies, where 2?M and where n=[1; M]. A tuning apparatus may periodically modify the angular frequencies where a variation of each angular frequency is smaller by at least a factor of 2 than a mode distance between the relevant adjacent angular frequencies. A detector has an upper cutoff frequency which is smaller by at least a factor of 10 than the smallest of the mode distances. A beam splitter may guide the M modes each to the detector and to an object, such that the detector may detect, for each of the M modes, portions of the laser radiation reflected by the object and portions of the laser radiation which come optically directly from the semiconductor laser.

Abstract: A semiconductor laser includes a semiconductor layer sequence with a p-doped layer, an n-doped layer and an active region arranged between the p-doped layer and the n-doped layer for generating electromagnetic radiation. The semiconductor laser also includes an optical structure. The optical structure is arranged on the side of the active region facing away from the p-doped layer. The optical structure includes a refractive index varying in a lateral direction for the electromagnetic radiation generated by the active region. The n-doped layer is arranged at least partially between the active region and the optical structure. The optical structure is arranged on the side of the n-doped layer facing away from the active region.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: A laser diode component includes a semiconductor layer stack including: a first semiconductor region, a second semiconductor region and an active region. the first semiconductor region has a projecting area, where the first semiconductor region laterally projects beyond the active region and the second semiconductor region. The laser diode component also includes a dielectric layer covering the semiconductor layer stack, and first contact means for electrically contacting the first semiconductor region. The first contact means includes a first contact layer covering the projecting area of the first semiconductor region, and a first contact post. The laser diode component further includes second contact means for electrically contacting the second semiconductor region. The second contact means includes a second contact post. A first contact area of the first contact post laterally surrounds a second contact area of the second contact post.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: In an embodiment a method includes providing a semiconductor body having a first region of a first conductivity type, a second region and an active region for producing electromagnetic radiation arranged between the first and the second region, forming a mask on the second region, forming a hole in the mask so that a surface of the second region is exposed; and growing a mesa structure of a semiconductor material on the exposed surface of the second region in the hole of the mask, wherein the mesa structure is at least partially of a second conductivity type being different from the first conductivity type, and wherein a height of the mesa structure is at most 50 nm.

Abstract: An optoelectronic device, in particular for the detection of obstacles and/or for distance measurement, may include a transmitting device for emitting laser beams. The transmitting device may include an array of pixels where each pixel of the pixel array comprises at least one laser, such as an optoelectronic laser, e.g. a VCSEL. The pixels of the pixel array may be divided into several sets of pixels, and the transmitting device may be configured to operate the sets of pixels in different, successive time intervals.

Abstract: An optoelectronic semiconductor laser component may include at least two laser units. The semiconductor laser component may have an output coupling surface configured to generate electromagnetic radiation in the semiconductor laser component. Each laser unit may include a laser resonator having a resonator axis, an output coupling mirror and a first and a second resonator mirror with a primary section of the resonator axis running laterally therebetween. The output coupling mirror may be formed by a partial region of the output coupling surface. Along the primary section of the resonator axis at least one contact strip is arranged on the output coupling surface, and extends to a metallic connection surface. The laser units may be aligned in such a way that the primary sections of the resonator axes run parallel to one another and the output coupling mirrors face one another.

Abstract: A semiconductor laser includes a horizontal laser element including a first semiconductor layer arrangement having a first active zone for generating radiation. The horizontal laser element furthermore includes a first optical resonator extending in a direction parallel to a first main surface of the first semiconductor layer arrangement. Lateral boundaries of the first semiconductor layer arrangement run obliquely, such that electromagnetic radiation generated is reflectable in a direction of the first main surface of the first semiconductor layer arrangement. The semiconductor laser furthermore includes a vertical laser element having a second optical resonator extending in a direction perpendicular to the first main surface of the first semiconductor layer arrangement.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: A laser source may include a laser diode, a modulation device, and a feedback device. The modulation device may include an electric power source and may be suitable for modifying a current intensity applied to the laser diode, which may modify an emission frequency of the laser diode. The feedback device may be suitable for modifying a current intensity applied to the laser diode by the electric power source as a function of the electromagnetic radiation emitted by the laser diode.

Abstract: Disclosed is a method for producing a radiation-emitting semiconductor chip including the steps: —providing a semiconductor layer sequence having an active region which is designed for generating electromagnetic radiation, —producing a first recess in the semiconductor layer sequence, which fully penetrates the active region, —producing a first structure in the first recess, wherein—at least a lateral surface of the first structure facing the active region extends obliquely to at least a first lateral surface of the semiconductor layer sequence, and—the first structure is spaced apart in lateral directions from the active region. Also disclosed is a radiation-emitting semiconductor chip.

Abstract: The invention relates to a semiconductor laser comprising a semiconductor layer arrangement, having an active zone for radiation generation, as well as comprising a first resonator mirror, a second resonator mirror and a resonator arranged between the first and the second resonator mirror, which ends in a direction parallel to a main surface of the semiconductor layer arrangement. The semiconductor laser also comprises a first wavelength-selective absorption element which is arranged between the semiconductor layer arrangement and the first resonator mirror.

Abstract: The invention relates to various aspects of an optoelectronic component or an arrangement comprising such a component for various applications, in particular in the automotive sector and for visual displays. The arrangements are characterized by simple manufacture and fast switching times.

Abstract: According to embodiments, a semiconductor laser comprises a semiconductor layer stack, which comprises an active zone for generating radiation. The semiconductor laser also comprises a first resonator mirror, a second resonator mirror, and an optical resonator, which is arranged between the first and second resonator mirrors and extends in a direction parallel to a main surface of the semiconductor layer stack. A reflectance R1 of the first resonator mirror is wavelength-dependent, so that R1 or a product R of R1 and the reflectance R2 of the second resonator mirror in a wavelength range decreases from a target wavelength ?0 of the laser to ?0+?? from a value R0, wherein ?? is selected as a function of a temperature-dependent shift in an emission wavelength.

Abstract: A composite component, a device, and method for producing the composite component including a plurality of optical components, a removable sacrificial layer, a retaining structure and a common intermediate carrier are provided, wherein the optical components each have an optical element for shaping a light beam and the sacrificial layer is arranged in the vertical direction at least in places between the intermediate carrier and the optical components. The retaining structure includes retaining elements, wherein the retaining structure and the sacrificial layer form a mechanical connection between the intermediate carrier and the optical components. The optical components are mechanically connected to the intermediate carrier only via the retaining structure, wherein the retaining elements are formed in such a way that under mechanical load they release the optical components so that the optical components are formed to be detachable from the intermediate carrier and thus transferable.