Abstract: A feedstock of semiconductor material is placed in a crucible. A closed sacrificial recipient containing a dopant material is placed in the crucible. The content of the crucible is melted resulting in incorporation of the dopant in the molten material bath. The temperature increase is performed under a reduced pressure.

Abstract: A feedstock of semiconductor material is placed in a crucible. A closed sacrificial recipient containing a dopant material is placed in the crucible. The content of the crucible is melted resulting in incorporation of the dopant in the molten material bath. The temperature increase is performed under a reduced pressure.

Abstract: The device for melting and purifying of a silicon feedstock comprises a crucible arranged inside a sealed chamber. A thermal gradient can be applied to the crucible by an arranged heat exchanger and a heating device. The device likewise comprises a device for reducing the pressure inside the chamber to a value lower than 10?2 mbar and a device for stirring the silicon in the crucible. The silicon feedstock successively undergoes degassing and pre-heating to atmospheric temperature, and then melting and low pressure, high temperature purification. Once the low-pressure purification step has been completed, directed crystallization is carried out.

Abstract: Production of photovoltaic grade crystalline silicon is achieved by crystallization of a molten silicon feedstock, the sum of the initial donor doping element and acceptor doping element concentrations whereof is greater than 0.1 ppma, and both the acceptor and donor doping element concentrations whereof are less than 25 ppma. At least a predefined quantity of a doping material having a segregation coefficient of less than 0.1 is added to the feedstock. This addition enables a crystallized silicon to be produced the difference between the donor and acceptor doping profiles whereof is comprised between 0.1 and 5 ppma over at least 50% of the solidified silicon. A silicon presenting a concentration of at least one of the dopants is greater than or equal to 5 ppma and a difference less than or equal to 5 ppma between these two types of dopant is integrated in a photovoltaic cell.

Abstract: A photovoltaic module comprising front and back plates each comprising inner and outer faces, a plurality of photovoltaic cells arranged side by side between the front and back plates and each comprising an antireflection layer, and a peripheral seal arranged between the front and back plates around the photovoltaic cells. The part of the inner face of the front plate delineated by the seal is coated with a polymer film presenting a refractive index comprised between that of the front plate and that of the antireflection layers of the photovoltaic cells, said film being in contact with the photovoltaic cells.

Abstract: The photovoltaic module comprises a plurality of photovoltaic cells arranged between substrates and connected in series by connecting conductors. An external connector pin of the module comprises a block of insulating material glued to one end of the module. An external connector of the pin is connected to at least one connector electrically connected to the connecting conductor associated with a cell arranged at the end of the module. The contact between the connector and the connecting conductor associated with a cell arranged at the end of the module is achieved by pressure, generated by means of a deformation. The deformation can be achieved either at the free end of the connecting conductor or at the internal end of the connector.

Abstract: The device comprises a crucible (1) having a bottom (2) and side walls (3). The crucible (1) comprises at least one lateral slit (4) arranged horizontally at a bottom part of the side walls (3). The lateral slit (4) presents a width of more than 50 mm and preferably comprised between 100 mm and 500 mm. The height (H) of the slit (4) is comprised between 50 and 1000 micrometers. The crystalline material is output from the crucible via the lateral slit (4) so as to form a crystalline ribbon (R). The method comprises a step of bringing a crystallization seed into contact with the material output via the lateral slit (4) and a horizontal displacement step of the ribbon (R).

Abstract: The photovoltaic module comprises front and rear plates. An organic seal is arranged between the plates and delineates a tight internal volume, kept at a pressure lower than atmospheric pressure, wherein the photovoltaic cells are arranged. The seal is an organic seal, for example of thermoplastic nature, for example of the polybutylene family. The production method comprises formation of a negative pressure by suction. The method can comprise sweeping by neutral gases, establishment of the negative pressure and sealing by compression. The method can also comprise partial sealing of the module so as to leave two openings in the seal, sweeping of the internal volume by neutral gases by means of the two openings, establishment of the negative pressure and closing of the openings.

Abstract: The photovoltaic module comprises front and rear plates. An organic seal is arranged between the plates and delineates a tight internal volume, kept at a pressure lower than atmospheric pressure, wherein the photovoltaic cells are arranged. The seal is an organic seal, for example of thermoplastic nature, for example of the polybutylene family. The production method comprises formation of a negative pressure by suction. The method can comprise sweeping by neutral gases, establishment of the negative pressure and sealing by compression. The method can also comprise partial sealing of the module so as to leave two openings in the seal, sweeping of the internal volume by neutral gases by means of the two openings, establishment of the negative pressure and closing of the openings.

Abstract: The photovoltaic cells (1a, 1b) of the assembly are disposed side by side between a front (10) and rear (11) glass substrates and are connected in series by means of front (12) and (13) rear connecting conductors and of interconnection elements (14). The connecting conductors can be formed on the internal face of each glass substrate facing the location of each of the cells or obtained by laser cutting, through the glass substrates, of conducting strips tightened beforehand between the cells and the glass substrates. The electrical interconnection elements (14) are disposed between two adjacent cells (1) to connect the opposite connecting conductors associated to two adjacent cells. A sealing joint (16), made of inorganic material, arranged between the two glass substrates (10, 11), defines a sealed internal volume which contains all the cells (1). Sealing is performed between 380° C. and 480° C. for a period of less than 30 minutes.

Abstract: A process for the treatment of a glass to reduce or remove its wettability by gallium is provided, wherein the glass is treated with a silyling agent. Also is provided an apparatus comprising at least one hollow element containing a gallium or gallium based alloy or in which a gallium or gallium based alloy can circulate, wherein the glass forming the hollow element has been treated using the process. The apparatus may be thermometer, barometer or electric switch.