Abstract: An improved method for forming a conductive path through at least one layer of insulating material in an integrated circuit structure comprising a narrow portion and a sloped oversized portion of the conductive path. The method comprises forming the sloped oversize portion of the conductive path by defining an opening in a layer of photoresist material applied over the layer of insulating material, sloping the edges of the photoresist layer adjacent the opening to define an angle with the plane of the underlying insulating layer, and etching the photoresist layer and the insulating layer with an etchant capable of removing both materials to form the sloped oversized portion of the conductive path. The narrow portion of the conductive path is formed by etching at least a portion of the insulating layer to expose a selected section of the integrated circuit structure below the insulating layer. Either the oversized sloped portion or the narrow portion may be formed first.