Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a first semiconductor layer sequence having a plurality of microdiodes, and a second semiconductor layer sequence having an active region. The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.

Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a first semiconductor layer sequence having a plurality of microdiodes, and a second semiconductor layer sequence having an active region. The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.

Abstract: An optoelectronic semiconductor chip has a first semiconductor layer sequence which comprises a multiplicity of microdiodes, and a second semiconductor layer sequence which comprises an active region. The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.

Abstract: A light-emitting diode arrangement includes a piezoelectric transformer having at least one output connection position, and a high-voltage light-emitting diode including a high-voltage light-emitting diode chip including at least two active regions connected in series with one another, wherein the high-voltage light-emitting diode is electrically connected to the output connection position of the piezo transformer.

Abstract: An optoelectronic component device includes a first group of optoelectronic components including at least one first optoelectronic component, wherein the at least one first optoelectronic component provides electromagnetic radiation of a first color valence, a second group of optoelectronic components including at least one second optoelectronic component, wherein the at least one second optoelectronic component provides electromagnetic radiation of a second color valence, and a phase dimmer, wherein the phase dimmer is designed in such a way that a first operating mode and a second operating mode are provided, wherein the phase dimmer actuates the first and the second group of optoelectronic components in such a way that, in the first operating mode, a first array of optoelectronic components of the optoelectronic component device is energized and, in the second operating mode, a second array of optoelectronic components of the optoelectronic component device is energized.

Abstract: An electronic ballast may include: a rectifier; a first unit including a first cascade of LEDs and a first storage capacitor connected in parallel with the first cascade; a second unit including at least a second cascade of LEDs and a second storage capacitor connected in parallel with the second cascade; wherein the second unit includes a diode coupled in series with the parallel circuit including the second cascade; wherein the electronic ballast includes: a current controller with an actual value input and a setpoint value input, a setpoint value presetting apparatus for the current through the cascades, wherein the setpoint value presetting apparatus is designed to provide a setpoint value at the setpoint value input which is proportional to the voltage at the output of the rectifier; a first actuating element; wherein the controller includes a drive output coupled to the first actuating element and a second actuating element.

Abstract: An optoelectronic semiconductor chip has a first semiconductor layer sequence which comprises a multiplicity of microdiodes, and a second semiconductor layer sequence which comprises an active region. The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.

Abstract: A circuit for actuating a plurality of light-emitting means which are connected in series, comprising a plurality of electronic switches, which can be actuated depending on a rectified system voltage. The plurality of electronic switches are arranged in parallel with at least some of the light-emitting means, wherein each of the plurality of electronic switches short-circuits on activation of at least one of the light-emitting means connected in series. At least one energy store is connected in parallel with a first group of light-emitting means during a charge phase by virtue of the electronic switches, and it is connected in parallel with a second group of light-emitting means during a discharge phase by virtue of the electronic switches.

Abstract: An optoelectronic component device includes a first group of optoelectronic components including at least one first optoelectronic component, wherein the at least one first optoelectronic component provides electromagnetic radiation of a first color valence, a second group of optoelectronic components including at least one second optoelectronic component, wherein the at least one second optoelectronic component provides electromagnetic radiation of a second color valence, and a phase dimmer, wherein the phase dimmer is designed in such a way that a first operating mode and a second operating mode are provided, wherein the phase dimmer actuates the first and the second group of optoelectronic components in such a way that, in the first operating mode, a first array of optoelectronic components of the optoelectronic component device is energized and, in the second operating mode, a second array of optoelectronic components of the optoelectronic component device is energized.

Abstract: An optoelectronic semiconductor chip has a first semiconductor layer sequence which comprises a multiplicity of microdiodes, and a second semiconductor layer sequence which comprises an active region The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.

Abstract: A circuit arrangement for operating a chain comprising at least one light emitting diode on an AC voltage, in particular mains voltage, comprising a rectifier with an input circuit for drawing the AC voltage and an output circuit, into which a rectified AC voltage is output. An energy store is provided in the output circuit, in particular a storage capacitor, to which the LED chain can be connected in a parallel circuit. A current controller interrupts, during operation, the charging of the storage capacitor each time the current in the output circuit has risen to a specific threshold current, and enables charging again when the voltage in the output circuit has then fallen to a specific threshold voltage.

Abstract: An LED multichip module may include a plurality of LED chips, which have electrical terminals and are connected in series via electrical connections, and have a designated operating voltage, wherein at least one short-circuiting connection is provided, which connects two of the terminals or connections electrically conductively to one another, and the short-circuiting connection bypasses at least one of the LED chips or a resistor, with the result that the operating voltage is in the range of between 150 V and 350 V.

Abstract: An electronic ballast may include: a rectifier; a first unit including a first cascade of LEDs and a first storage capacitor connected in parallel with the first cascade; a second unit including at least a second cascade of LEDs and a second storage capacitor connected in parallel with the second cascade; wherein the second unit includes a diode coupled in series with the parallel circuit including the second cascade; wherein the electronic ballast includes: a current controller with an actual value input and a setpoint value input, a setpoint value presetting apparatus for the current through the cascades, wherein the setpoint value presetting apparatus is designed to provide a setpoint value at the setpoint value input which is proportional to the voltage at the output of the rectifier; a first actuating element; wherein the controller includes a drive output coupled to the first actuating element and a second actuating element.

Abstract: A circuit for actuating a plurality of light-emitting means which are connected in series, comprising a plurality of electronic switches, which can be actuated depending on a rectified system voltage. The plurality of electronic switches are arranged in parallel with at least some of the light-emitting means, wherein each of the plurality of electronic switches short-circuits on activation of at least one of the light-emitting means connected in series. At least one energy store is connected in parallel with a first group of light- emitting means during a charge phase by virtue of the electronic switches, and it is connected in parallel with a second group of light-emitting means during a discharge phase by virtue of the electronic switches.

Abstract: A light-emitting diode arrangement includes a piezoelectric transformer having at least one output connection position, and a high-voltage light-emitting diode including a high-voltage light-emitting diode chip including at least two active regions connected in series with one another, wherein the high-voltage light-emitting diode is electrically connected to the output connection position of the piezo transformer.

Abstract: An optoelectronic semiconductor chip has a first semiconductor layer sequence which comprises a multiplicity of microdiodes, and a second semiconductor layer sequence which comprises an active region the first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.

Abstract: The invention relates to a method and a system for determining the orientation of an external magnetic field by means of giant magneto-resistor (GMR) sensors. A sensor circuit is provided with two or more sub-circuits each having two GMR sensors connected in series. Three respective sensor voltages are obtained and a scaling factor is determined from differences in these voltages. An external magnetic field orientation is determined based on a scaling factor applied to the difference voltages. The inventive method enables signals from the GRM sensors to be reprocessed easily in order to compensate the temperature dependence of the signals.

Abstract: The invention relates to a method and a system for determining the orientation of an external magnetic field by means of GMR sensors. The inventive method enables signals from the GRM sensors to be reprocessed easily in order to compensate the temperature dependence of the signals.

Abstract: The current sensor has at least one magnetic field sensor for measuring a current in a conductor by determining the strength of the magnetic field produced by the current. Furthermore, the current sensor has an arrangement for focussing and guiding the magnetic field toward the magnetic field sensor. The arrangement has at least two mutually opposite sections, between which the magnetic field sensor is arranged. The arrangement is composed of a magnetic material which has a coercivity strength of less than 10 A/cm.