Abstract: A disruption device for fixing to an aerial vehicle. The disruption device is adapted to disrupt at least one radio path between at least one receiving unit of an unmanned flying body and at least one transmitting unit provided for controlling the flight path of the unmanned flying body. An aerial vehicle having the disruption device is further provided.

Abstract: A disruption device for fixing to an aerial vehicle. The disruption device is adapted to disrupt at least one radio path between at least one receiving unit of an unmanned flying body and at least one transmitting unit provided for controlling the flight path of the unmanned flying body. An aerial vehicle having the disruption device is further provided.

Abstract: A reactive radio interferer includes a plurality of time synchronized transmitting/receiving lines, each of which is designed to alternately carry out-monitoring phases in order to receive the radio spectrum and interference phases in order to transmit an interference signal on the basis of the radio spectrum received in the monitoring phase. Testing of the reactive radio interferer is performed by having one of the transmitting/receiving lines transmit a test signal within a monitoring phase, the test signal being received and evaluated by at least one other transmitting/receiving line.

Abstract: A reactive radio interferer includes a plurality of time synchronized transmitting/receiving lines, each of which is designed to alternately carry out-monitoring phases in order to receive the radio spectrum and interference phases in order to transmit an interference signal on the basis of the radio spectrum received in the monitoring phase. Testing of the reactive radio interferer is performed by having one of the transmitting/receiving lines transmit a test signal within a monitoring phase, the test signal being received and evaluated by at least one other transmitting/receiving line.

Abstract: Silicon wafers and a process for the production thereof which produces was having intrinsic gettering action and on which thin oxide layers with high breakdown strength can be produced. During the production, the wafers are subjected to a treatment which smooths the wafer surface, for example, by repolishing, after the intrinsic getters have been produced in the interior of the wafer. Oxide layers subsequently deposited are outstanding for an increased breakdown strength compared with untreated wafers.