Patents by Inventor Hucheng Sun

Hucheng Sun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10097051
    Abstract: A rectenna includes (a) a multi-band multi-channel (MBMC) matching network, and/or (b) an adaptively reconfigurable rectifier or a breakdown-protected rectifier. An MBMC matching network includes a plurality of T-shaped transmission line matching structures coupled in series. An adaptively reconfigurable rectifier circuit includes a low input power rectifying portion, a high input power rectifying portion, and a set of transistors configured for selectively and automatically transitioning the adaptively reconfigurable rectifier between a low input power operating configuration and a high input RF power operating configuration, in a manner correlated with input RF power level. A breakdown-protected rectifier includes a transistor-protected diode structure having a diode coupled to a transistor in a manner that protects the diode from direct exposure to negative voltages that would ordinarily cause the diode to break down in the absence of the transistor.
    Type: Grant
    Filed: February 27, 2014
    Date of Patent: October 9, 2018
    Assignee: National University of Singapore
    Inventors: Yong Xin Guo, Zheng Zhong, Hucheng Sun
  • Publication number: 20150372541
    Abstract: A rectenna includes (a) a multi-band multi-channel (MBMC) matching network, and/or (b) an adaptively reconfigurable rectifier or a breakdown-protected rectifier. An MBMC matching network includes a plurality of T-shaped transmission line matching structures coupled in series. An adaptively reconfigurable rectifier circuit includes a low input power rectifying portion, a high high input power rectifying portion, and a set of transistors configured for selectively and automatically transitioning the adaptively reconfigurable rectifier between a low input power operating configuration and a high input RF power operating configuration, in a manner correlated with input RF power level. A breakdown-protected rectifier includes a transistor-protected diode structure having a diode coupled to a transistor in a manner that protects the diode from direct exposure to negative voltages that would ordinarily cause the diode to break down in the absence of the transistor.
    Type: Application
    Filed: February 27, 2014
    Publication date: December 24, 2015
    Applicant: National University of Singapore
    Inventors: Yong Xin Guo, Zheng Zhong, Hucheng Sun