Patents by Inventor Huei-Jhen SIAO

Huei-Jhen SIAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Blue light emitting device and light emitting device
    Patent number: 9331302
    Abstract: A blue light emitting device includes an electrode layer, a first metal layer, a second metal layer formed between the electrode layer and the first metal layer, and an organic material layer formed between the first metal layer and the second metal layer and including a blue shift light emitting sub-layer. A peak of a first light-emitting spectrum of the blue shift light emitting sub-layer, which ranges within 490-550 nm, is shifted to a peak of a second light-emitting spectrum, which is less than 510 nm, by the surface plasmon coupling between the first metal layer and the second metal layer. A light emitting device is further provided, which is sequentially stacked with a first metal layer, an organic material layer having a blue shift light emitting sub-layer, a second metal layer having a metal portion and an opening portion, an electrode layer, and a light emitting layer doped with a dopant material, to emit white light.
    Type: Grant
    Filed: February 18, 2015
    Date of Patent: May 3, 2016
    Assignee: Industrial Technology Research Institute
    Inventors: Jung-Yu Li, Shih-Pu Chen, Yi-Ping Lin, Cheng-Chang Chen, Guan-Yu Chen, Jin-Han Wu, Cheng-Hung Li, Huei-Jhen Siao
  • BLUE LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE
    Publication number: 20150236290
    Abstract: A blue light emitting device includes an electrode layer, a first metal layer, a second metal layer formed between the electrode layer and the first metal layer, and an organic material layer formed between the first metal layer and the second metal layer and including a blue shift light emitting sub-layer. A peak of a first light-emitting spectrum of the blue shift light emitting sub-layer, which ranges within 490-550 nm, is shifted to a peak of a second light-emitting spectrum, which is less than 510 nm, by the surface plasmon coupling between the first metal layer and the second metal layer. A light emitting device is further provided, which is sequentially stacked with a first metal layer, an organic material layer having a blue shift light emitting sub-layer, a second metal layer having a metal portion and an opening portion, an electrode layer, and a light emitting layer doped with a dopant material, to emit white light.
    Type: Application
    Filed: February 18, 2015
    Publication date: August 20, 2015
    Inventors: Jung-Yu LI, Shih-Pu CHEN, Yi-Ping LIN, Cheng-Chang CHEN, Guan-Yu CHEN, Jin-Han WU, Cheng-Hung LI, Huei-Jhen SIAO