Abstract: A gate all around (GAA) field effect transistor (GAA FET) is described. The GAA FET includes a substrate, having a nanosheet structure on the substrate. The GAA FET also includes a source/drain (SD) region in the substrate and coupled to a first end of the nanosheet structure. The GAA FET further includes a drain/source (DS) region in the substrate and coupled to a second end opposite the first end of the nanosheet structure. The GAA FET also includes a metal gate on the nanosheet structure to define channels between the source/drain region and the drain/source region. The GAA FET further includes a trench oxide blocking a bottom channel of the channels.

Abstract: Methods for forming a gate structure of a multi-gate device are provided. An example method includes depositing a gate dielectric layer over first nanostructures over a first region of a substrate and second nanostructures over a second region of the substrate, depositing a first work function metal (WFM) layer over the first nanostructures and the second nanostructures, depositing a first hard mask (HM) layer over the first WFM layer, selectively removing the first HM layer and the first WFM layer over the first region, selectively removing the first HM layer over the second region, depositing a second WFM layer over the substrate, depositing a second HM layer over the second WFM layer, selectively removing the second HM layer and the second WFM layer over the first region, selectively removing the second HM layer over the second region, and depositing a third WFM layer over the substrate.

Abstract: A hydrogel composition, a hydrogel biomedical material, a method for facilitating regeneration of a bone and a manufacturing method of a hydrogel composition are provided. The hydrogel composition includes a first deionized water, a gel powder, a transglutaminase mixture and a hyaluronic acid powder. The gel powder includes gelatin and alginic acid. The first deionized water, the gel powder, the transglutaminase mixture and the hyaluronic acid powder are evenly mixed. Based on the hydrogel composition being 100 wt %, the first deionized water is 95 wt % to 98.46 wt %, the gel powder is 1 wt % to 3 wt %, the transglutaminase mixture is 0.04 wt % to 0.15 wt %, and the hyaluronic acid powder is 0.5 wt % to 1.5 wt %.

Abstract: An integrated circuit device includes a substrate; an integrated circuit area disposed on the substrate and comprising a dielectric stack; a seal ring disposed in the dielectric stack and around a periphery of the integrated circuit area; a cap layer on the dielectric stack; a trench around the seal ring and exposing a sidewall of the dielectric stack; a memory storage structure disposed on the cap layer; and a moisture blocking layer continuously covering the integrated circuit area and the memory storage structure. The moisture blocking layer extends to the sidewall of the dielectric stack, thereby sealing a boundary between two adjacent dielectric films in the dielectric stack.

Abstract: The present invention provides a method for preparing an activated carbon, which includes impregnating a carbonaceous material with carbonated water; and exposing the carbonaceous material to microwave radiation to produce the activated carbon.

Abstract: A method for increasing calcium absorption includes administering to a subject in need thereof a composition which contains a culture of Lactobacillus plantarum PL-02. The Lactobacillus plantarum PL-02 is deposited at the China General Microbiological Culture Collection Center (CGMCC) under an accession number CGMCC 20485 in accordance with the Budapest Treaty.

Abstract: A method for increasing calcium absorption includes administering to a subject in need thereof a composition containing a culture of Lactobacillus rhamnosus MP108. The Lactobacillus rhamnosus MP108 is deposited under the terms of the Budapest Treaty at the China General Microbiological Culture Collection Center (CGMCC) under an accession number CGMCC 21225.

Abstract: The present invention discloses an therapeutic ultrasonic device consisting of at least one arc ultrasonic transducer that can be assembled. The arc ultrasonic transducer comprises a protruding part, a concave part and a plurality of piezoelectric vibrating parts. The protruding part and the concave part are disposed at two ends of the arc ultrasonic transducer respectively, and the piezoelectric vibrating parts are disposed at the inner arc face of the arc ultrasonic transducer. Various numbers of arc ultrasonic transducers can be used in assembled structure or non-assembled structure according to different body size and focal zones of various target tissue. Thus the therapeutic ultrasonic device of the present invention is widely used in treatment of various indications.

Abstract: A pH-responsive hydrogel, which is synthesized by using mixed pectin and sucralfate treated with a small amount of acid to form a pH-responsive hydrogel. The pH-responsive hydrogel can form a temporary coating on the surface of the gastrointestinal tract to reduce excessive nutrient absorption, and exhibits excellent barrier properties and mucosal adhesion effects, which are useful for reducing blood sugar rise and weight gain, the liver fat accumulation, body fat accumulation and blood low-density lipoprotein that have a significant effect. In addition, the technical principles disclosed in the pH-responsive hydrogel should be applied to other polymer materials to manufacture different pH-responsive hydrogels.

Abstract: A method of manufacturing a transistor structure includes forming a plurality of trenches in a substrate, lining the plurality of trenches with a dielectric material, forming first and second substrate regions at opposite sides of the plurality of trenches, and filling the plurality of trenches with a conductive material. The plurality of trenches includes first and second trenches aligned between the first and second substrate regions, and filling the plurality of trenches with the conductive material includes the conductive material extending continuously between the first and second trenches.

Abstract: A method of detecting electromagnetic radiation includes illuminating a photodiode of a pixel sensor with electromagnetic radiation, using vertical gate structures of a transfer transistor to couple a cathode of the photodiode to an internal node of the pixel sensor, thereby generating an internal node voltage level, and generating an output voltage level of the pixel sensor based on the internal node voltage level.

Abstract: A gate cut extending through a gate adjacent to a channel region of a 3D FET causes the gate to exert a first force and a second force in directions orthogonal to each other on the channel region to improve carrier mobility, thereby increasing drive strength. The gate cut may include a gate cut wall to cause the gate to exert a first force in a first direction on the channel region. The gate cut may include a gate cut wedge to cause the gate to exert a second force in the first direction and exert a third force in a second direction on the channel region to further improve carrier mobility. The 3D FET may be P-type or N-type and the 3D FET may be FinFET or GAA FET.

Abstract: Disclosed are devices that include a direct N/P local interconnect with minimal recess on shallow trench isolation (STI) oxide. This reduces undesirable coupling capacitance with active gate, which in turn improves AC performance of the device. Pull or even partial replacement of STI oxide with low-k dielectric can further reduce coupling capacitance.

Abstract: A semiconductor structure with a heat dissipation structure includes a first device wafer includes a front side and a back side. A first transistor is disposed on the front side. The first transistor includes a first gate structure disposed on the front side. Two first source/drain doping regions are embedded within the first device wafer at two side of the first gate structure. A channel region is disposed between the two first source/drain doping regions and embedded within the first device wafer. A first dummy metal structure contacts the back side of the first device wafer, and overlaps the channel region.

Abstract: Gate-all-around (GAA) field-effect transistor (FET) device employing strain material structure in inactive gate region(s) of a gate for applying channel strain to the channel(s) of the GAA FET for increased carrier mobility. The GAA FET device includes a GAA P-type (P) FET (PFET) and a GAA N-type (N) FET (NFET) served by a gate with a strain material in the inactive gate region(s) of the gate adjacent to the active gates of the GAA NFET and GAA PFET. In this manner, the strain material applies strain to both the GAA NFET and GAA PFET channels in the elongated direction of the gate in a direction orthogonal to their channel directions between the respective sources and drains, so that a strain material of the same strain type can be used to increase carrier mobility of both the GAA NFET and GAA PFET alike.

Abstract: An electronic device includes a fuel cell, a first switch, a rechargeable battery, a second switch, and a relay. The fuel cell provides a fuel voltage. The first switch provides the fuel voltage to a first node according to a first control signal. The rechargeable battery provides a battery voltage. The second switch is coupled to the first node and charges the rechargeable battery with the fuel voltage according to a second control signal. The relay provides a voltage of the first node to the load according to the third control signal.

Abstract: An integrated circuit device includes a substrate; an integrated circuit region on the substrate, said integrated circuit region comprising a dielectric stack; a seal ring disposed in said dielectric stack and around a periphery of the integrated circuit region; a trench around the seal ring and exposing a sidewall of the dielectric stack; and a moisture blocking layer continuously covering the integrated circuit region and extending to the sidewall of the dielectric stack, thereby sealing a boundary between two adjacent dielectric films in the dielectric stack.

Abstract: A semiconductor structure with a heat dissipation structure includes a first device wafer includes a front side and a back side. A first transistor is disposed on the front side. The first transistor includes a first gate structure disposed on the front side. Two first source/drain doping regions are embedded within the first device wafer at two side of the first gate structure. A channel region is disposed between the two first source/drain doping regions and embedded within the first device wafer. A first dummy metal structure contacts the back side of the first device wafer, and overlaps the channel region.

Abstract: Disclosed are devices that include a contact for electrical connection with a source/drain. The contact occupies a full width of a contact well other than areas occupied by sidewall spacers. As a result, high resistivity (due to the presence of liners and nucleation layers within the contact well in conventional devices) is reduced or eliminated.

Abstract: A method for increasing calcium absorption includes use of a composition containing a culture of Bifidobacterium longum subsp. infantis BLI-02 which is deposited under the Budapest Treaty at the China General Microbiological Culture Collection Center (CGMCC) under an accession number CGMCC 15212.