Abstract: In an aspect, an apparatus is provided that sets and reprograms the state of programmable devices. In an aspect, a method is provided such that an adhesive is formed on a dielectric and on an electrode, the adhesive is patterned exposing the electrode, and a programmable material is formed on the adhesive and on the electrode. In an aspect, a method is provided such that an adhesive is formed on a dielectric, an opening is formed through the dielectric exposing a contact formed on a substrate, and a programmable material is formed on the adhesive and on a portion of the contact. A conductor is formed on the programmable material and the contact transmits to a signal line.

Abstract: In an aspect, an apparatus is provided that sets and reprograms the state of programmable devices. In an aspect, a method is provided such that an adhesive is formed on a dielectric and on an electrode, the adhesive is patterned exposing the electrode, and a programmable material is formed on the adhesive and on the electrode. In an aspect, a method is provided such that an adhesive is formed on a dielectric, an opening is formed through the dielectric exposing a contact formed on a substrate, and a programmable material is formed on the adhesive and on a portion of the contact. A conductor is formed on the programmable material and the contact transmits to a signal line.

Abstract: Two methods for substantially improving the integrity of a TiN barrier layer are disclosed. The first method allows an atmospheric anneal in a conventional semiconductor furnace. The atmospheric anneal substantially seals the exposed TiN surface preventing subsequent metal layers from migrating through the barrier layer. The second method involves a reaction within a plasma reactor using a plasma gas. The plasma gas reacts with titanium within the TiN film to form a desired titanium compound. The gas is adsorbed onto the TiN grains at the grain boundaries within the TiN film thus filling the grain boundaries and thus substantially preventing subsequent metal layers from migrating though the TiN barrier layer. The second method allows the deposition of TiN, the plasma reaction, and subsequent metal depositions to take place on the same equipment using the same evacuation cycle.

Abstract: Two methods for substantially improving the integrity of a TiN barrier layer are disclosed. The first method allows an atmospheric anneal in a conventional semiconductor furnace. The atmospheric anneal substantially seals the exposed TiN surface preventing subsequent metal layers from migrating through the barrier layer. The second method involves a reaction within a plasma reactor using a plasma gas. The plasma gas reacts with titanium within the TiN film to form a desired titanium compound. The gas is adsorbed onto the TiN grains at the grain boundaries within the TiN film thus filling the grain boundaries and thus substantially preventing subsequent metal layers from migrating though the TiN barrier layer. The second method allows the deposition of TiN, the plasma reaction, and subsequent metal depositions to take place on the same equipment using the same evacuation cycle.