Abstract: Dummy structures between a high voltage (HV) region and a low voltage (LV) region of a substrate are disclosed, along with methods of forming the dummy structures. An embodiment is a structure comprising a HV gate dielectric over a HV region of a substrate, a LV gate dielectric over a LV region of the substrate, and a dummy structure over a top surface of the HV gate dielectric. A thickness of the LV gate dielectric is less than a thickness of the HV gate dielectric. The dummy structure is on a sidewall of the HV gate dielectric.

Abstract: Among other things, a semiconductor seal ring and method for forming the same are provided. The semiconductor seal ring comprises a plurality of dielectric layers formed over a semiconductor substrate upon which a semiconductor device is formed. A plurality of conductive layers is arranged among at least some of the plurality of dielectric layers. An upper conductive layer is formed over the plurality of dielectric layers. An upper passivation layer is formed over the upper conductive layer to isolate the upper conductive layer from conductive debris resulting from a die saw process along a die saw cut line. In an example, a first columnar region comprising a first portion of the conductive layers is electrically isolated from the semiconductor device because the first columnar region is disposed relatively close to the die saw cut line and thus can be exposed to conductive debris which can cause undesired short circuits.

Abstract: Dummy structures between a high voltage (HV) region and a low voltage (LV) region of a substrate are disclosed, along with methods of forming the dummy structures. An embodiment is a structure comprising a HV gate dielectric over a HV region of a substrate, a LV gate dielectric over a LV region of the substrate, and a dummy structure over a top surface of the HV gate dielectric. A thickness of the LV gate dielectric is less than a thickness of the HV gate dielectric. The dummy structure is on a sidewall of the HV gate dielectric.

Abstract: Among other things, a semiconductor seal ring and method for forming the same are provided. The semiconductor seal ring comprises a plurality of dielectric layers formed over a semiconductor substrate upon which a semiconductor device is formed. A plurality of conductive layers is arranged among at least some of the plurality of dielectric layers. An upper conductive layer is formed over the plurality of dielectric layers. An upper passivation layer is formed over the upper conductive layer to isolate the upper conductive layer from conductive debris resulting from a die saw process along a die saw cut line. In an example, a first columnar region comprising a first portion of the conductive layers is electrically isolated from the semiconductor device because the first columnar region is disposed relatively close to the die saw cut line and thus can be exposed to conductive debris which can cause undesired short circuits.