Abstract: A method for forming a dynamic random access memory cell with an increased capacitance capacitor having a multi-pillared storage node is achieved. A first layer of polysilicon fills an opening through a first dielectric layer to a node contact region. A photoresist mask is formed over the portion of a second dielectric layer over the polysilicon layer over the node contact region. The photoresist mask is silylated. The top silylated photoresist portion is removed. The second dielectric layer and the first polysilicon layer are etched away where they are not covered by the photoresist mask and the silylated photoresist sidewalls thereby forming a T-shaped first polysilicon layer. The photoresist mask is removed whereby the silylated photoresist sidewalls remain. The second dielectric layer is etched away where it is not covered by the silylated photoresist sidewalls thereby forming dielectric bars underlying the sidewalls and exposing the first polysilicon layer between the dielectric bars.