Patents by Inventor Huey-Chiang Liou
Huey-Chiang Liou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8513111Abstract: A semiconductor structure may be covered with a thermally decomposing film. That film may then be covered by a sealing cover. Subsequently, the thermally decomposing material may be decomposed, forming a cavity.Type: GrantFiled: July 12, 2006Date of Patent: August 20, 2013Assignee: Intel CorporationInventors: Robert P. Meagley, Kevin P. O'Brien, Tian-An Chen, Michael D. Goodner, James Powers, Huey-Chiang Liou
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Patent number: 7867687Abstract: Embodiments of the invention provide a non-chemically amplified photoresist, which results in reduced line wide roughness (LWR). In accordance with one embodiment the photoresist includes a developer-soluble resin (DSR) and a photoactive compound (PAC). For one embodiment of the invention, the even distribution of the PAC within the DSR results in reduced acid diffusion thus reducing LWR. Prior to exposure to the light source, the PAC inhibits solubility of the DSR in the developer. Upon exposure the PAC converts to acid to promote solubility of the DSR. The even distribution of the PAC within the photoresist results in reduced LWR and a reduction in defects. For one embodiment the photoresist is applied in the EUV technology (e.g., wavelength is 13.4 nm). For such an embodiment the LWR may be reduced to less than 1.5 nm allowing for effective fabrication of devices having feature sizes of approximately 15 nm.Type: GrantFiled: October 15, 2003Date of Patent: January 11, 2011Assignee: Intel CorporationInventors: Wang Yueh, Huey-Chiang Liou, Hai Deng, Hok-Kin Choi
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Patent number: 7469443Abstract: In a formulation of a wafer cleaning brush, forming a polymer solution with a plurality of nano-scale porogens or with a synthetic pore forming agent and curing the polymer solution to form a porous polymeric material.Type: GrantFiled: January 10, 2005Date of Patent: December 30, 2008Assignee: Intel CorporationInventors: Huey-Chiang Liou, Alexander Tregub, Mansour Moinpour
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Publication number: 20080220213Abstract: A method for forming a zeolite-carbon doped oxide (CDO) composite dielectric material is herein described. Zeolite particles may be dispersed in a solvent. The zeolite solvent solution may then be deposited on an underlying layer, such as a wafer or other dielectric layer. At least some solvent may then be removed to form a zeolite film. A CDO may then be deposited in the zeolite film to form a zeolite-CDO composite film/dielectric. The Zeolite-CDO composite film/dielectric may then be calcinated to form a solid phase zeolite-CDO composite dielectric.Type: ApplicationFiled: October 26, 2007Publication date: September 11, 2008Inventors: Hai Deng, Huey-Chiang Liou
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Patent number: 7391501Abstract: Compositions for immersion liquid materials and associated immersion lithography systems and techniques. Examples of polymer or oligomer-based immersion liquids are described to exhibit superior material properties for immersion lithography in comparison with water and some other commonly-used immersion liquids. In addition, certain material additives may be added to water and water-based immersion liquids to improve the performance of the immersion liquids in immersion lithography.Type: GrantFiled: January 22, 2004Date of Patent: June 24, 2008Assignee: Intel CorporationInventors: Hai Deng, Yueh Wang, Huey-Chiang Liou, Hok-Kin Choi, Robert M. Meagley, Ernisse Putna
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Patent number: 7303985Abstract: A method for forming a zeolite-carbon doped oxide (CDO) composite dielectric material is herein described. Zeolite particles may be dispersed in a solvent. The zeolite solvent solution may then be deposited on an underlying layer, such as a wafer of other dielectric layer. At least some solvent may then be removed to form a zeolite film. A CDO may then be deposited in the zeolite film to form a zeolite-CDO composite film/dielectric. The zeolite-CDO composite film/dielectric may then be calcinated to form a solid phase zeolite-CDO composite dilectric.Type: GrantFiled: November 17, 2003Date of Patent: December 4, 2007Assignee: Intel CorporationInventors: Hai Deng, Huey-Chiang Liou
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Publication number: 20060255432Abstract: A semiconductor structure may be covered with a thermally decomposing film. That film may then be covered by a sealing cover. Subsequently, the thermally decomposing material may be decomposed, forming a cavity.Type: ApplicationFiled: July 12, 2006Publication date: November 16, 2006Inventors: Robert Meagley, Kevin O'Brien, Tian-An Chen, Michael Goodner, James Powers, Huey-Chiang Liou
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Patent number: 7125793Abstract: A method of forming an opening in a disclosed ILD is described. The ILD in one embodiment includes a matrix material and a photosensitive porogen. Hard sidewalls are formed in the ILD allowing a thin barrier layer to be used in a dual damascene copper and porous low-k without pore sealing steps.Type: GrantFiled: December 23, 2003Date of Patent: October 24, 2006Assignee: Intel CorporationInventors: Huey-Chiang Liou, Wang Yueh
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Publication number: 20060151003Abstract: In a formulation of a wafer cleaning brush, forming a polymer solution with a plurality of nano-scale porogens or with a synthetic pore forming agent and curing the polymer solution to form a porous polymeric material.Type: ApplicationFiled: January 10, 2005Publication date: July 13, 2006Inventors: Huey-Chiang Liou, Alexander Tregub, Mansour Moinpour
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Patent number: 7071125Abstract: A method including introducing a precursor in the presence of a circuit substrate, and forming a film including a reaction product of the precursor on the substrate, wherein the precursor includes a molecule comprising a primary species of the film and a modifier. A method including introducing a precursor in the presence of a circuit substrate, the precursor including a primary species and a film modifier as a single source, and forming a film on the circuit substrate. An apparatus including a semiconductor substrate, and a film on a surface of the semiconductor substrate, the film including a reaction product of a precursor including a molecule comprising a primary species and a modifier.Type: GrantFiled: September 22, 2004Date of Patent: July 4, 2006Assignee: Intel CorporationInventors: Michael L. McSwiney, Huey-Chiang Liou, Michael D. Goodner, Robert E. Leet, Robert P. Meagley
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Publication number: 20060063394Abstract: A method including introducing a precursor in the presence of a circuit substrate, and forming a film including a reaction product of the precursor on the substrate, wherein the precursor includes a molecule comprising a primary species of the film and a modifier. A method including introducing a precursor in the presence of a circuit substrate, the precursor including a primary species and a film modifier as a single source, and forming a film on the circuit substrate. An apparatus including a semiconductor substrate, and a film on a surface of the semiconductor substrate, the film including a reaction product of a precursor including a molecule comprising a primary species and a modifier.Type: ApplicationFiled: September 22, 2004Publication date: March 23, 2006Inventors: Michael McSwiney, Huey-Chiang Liou, Michael Goodner, Robert Leet, Robert Meagley
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Patent number: 6995073Abstract: Method and structure for integrating conductive and dielectric materials in a microelectronic structure having air gaps are disclosed. Certain embodiments of the invention comprise isolating dielectric layers from conductive layers using an etch stop layer to facilitate controlled removal of portions of the dielectric layers and formation of air gaps or voids. Capping and peripheral structural layers may be incorporated to increase the structural integrity of the integration subsequent to removal of sacrificial material.Type: GrantFiled: July 16, 2003Date of Patent: February 7, 2006Assignee: Intel CorporationInventor: Huey-Chiang Liou
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Publication number: 20050164502Abstract: Compositions for immersion liquid materials and associated immersion lithography systems and techniques. Examples of polymer or oligomer-based immersion liquids are described to exhibit superior material properties for immersion lithography in comparison with water and some other commonly-used immersion liquids. In addition, certain material additives may be added to water and water-based immersion liquids to improve the performance of the immersion liquids in immersion lithography.Type: ApplicationFiled: January 22, 2004Publication date: July 28, 2005Inventors: Hai Deng, Yueh Wang, Huey-Chiang Liou, Hok-Kin Choi, Robert Meagley, Ernisse Putna
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Publication number: 20050133920Abstract: A method of forming an opening in a disclosed ILD is described. The ILD in one embodiment includes a matrix material and a photosensitive porogen. Hard sidewalls are formed in the ILD allowing a thin barrier layer to be used in a dual damascene copper and porous low-k without pore sealing steps.Type: ApplicationFiled: December 23, 2003Publication date: June 23, 2005Inventors: Huey-Chiang Liou, Wang Yueh
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Publication number: 20050107242Abstract: A method for forming a zeolite-carbon doped oxide (CDO) composite dielectric material is herein described. Zeolite particles may be dispersed in a solvent. The zeolite solvent solution may then be deposited on an underlying layer, such as a wafer of other dielectric layer. At least some solvent may then be removed to form a zeolite film. A CDO may then be deposited in the zeolite film to form a zeolite-CDO composite film/dielectric. The zeolite-CDO composite film/dielectric may then be calcinated to form a solid phase zeolite-CDO composite dilectric.Type: ApplicationFiled: November 17, 2003Publication date: May 19, 2005Inventors: Hai Deng, Huey-Chiang Liou
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Publication number: 20050084793Abstract: Embodiments of the invention provide a non-chemically amplified photoresist, which results in reduced line wide roughness (LWR). In accordance with one embodiment the photoresist includes a developer-soluble resin (DSR) and a photoactive compound (PAC). For one embodiment of the invention, the even distribution of the PAC within the DSR results in reduced acid diffusion thus reducing LWR. Prior to exposure to the light source, the PAC inhibits solubility of the DSR in the developer. Upon exposure the PAC converts to acid to promote solubility of the DSR. The even distribution of the PAC within the photoresist results in reduced LWR and a reduction in defects. For one embodiment the photoresist is applied in the EUV technology (e.g., wavelength is 13.4 nm). For such an embodiment the LWR may be reduced to less than 1.5 nm allowing for effective fabrication of devices having feature sizes of approximately 15 nm.Type: ApplicationFiled: October 15, 2003Publication date: April 21, 2005Inventors: Wang Yueh, Huey-Chiang Liou, Hai Deng, Hok-Kin Choi
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Patent number: 6864192Abstract: A Langmuir-Blodgett film may be utilized as a chemically amplified photoresist layer. Langmuir-Blodgett films have highly vertically oriented structures which may be effective in reducing line edge or line width roughness in chemically amplified photoresists.Type: GrantFiled: October 28, 2003Date of Patent: March 8, 2005Assignee: Intel CorporationInventors: Huey-Chiang Liou, Hai Deng, Wang Yueh, Hok-Kin Choi
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Publication number: 20050012219Abstract: Method and structure for integrating conductive and dielectric materials in a microelectronic structure having air gaps are disclosed. Certain embodiments of the invention comprise isolating dielectric layers from conductive layers using an etch stop layer to facilitate controlled removal of portions of the dielectric layers and formation of air gaps or voids. Capping and peripheral structural layers may be incorporated to increase the structural integrity of the integration subsequent to removal of sacrificial material.Type: ApplicationFiled: July 16, 2003Publication date: January 20, 2005Inventor: Huey-Chiang Liou
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Publication number: 20040145030Abstract: A semiconductor structure may be covered with a thermally decomposing film. That film may then be covered by a sealing cover. Subsequently, the thermally decomposing material may be decomposed, forming a cavity.Type: ApplicationFiled: January 28, 2003Publication date: July 29, 2004Inventors: Robert P. Meagley, Kevin P. O'Brien, Tian-An Chen, Michael D. Goodner, James Powers, Huey-Chiang Liou