Abstract: Automatic generation of intelligent content is created using a system of computers including a user device and a cloud-based component that processes the user information. The system performs a process that includes receiving an input document and parsing the input document to generate inputs for a natural language generation model using a text analysis model. The natural language generation model generates one or more candidate presentation scripts based on the inputs. A presentation script is selected from the candidate presentation scripts and displayed. A text-to-speech model may be used to generate a synthesized audio presentation of the presentation script. A final presentation may be generated that includes a visual display of the input document and the corresponding audio presentation in sync with the visual display.

Abstract: Automatic generation of intelligent content is created using a system of computers including a user device and a cloud-based component that processes the user information. The system performs a process that includes receiving an input document and parsing the input document to generate inputs for a natural language generation model using a text analysis model. The natural language generation model generates one or more candidate presentation scripts based on the inputs. A presentation script is selected from the candidate presentation scripts and displayed. A text-to-speech model may be used to generate a synthesized audio presentation of the presentation script. A final presentation may be generated that includes a visual display of the input document and the corresponding audio presentation in sync with the visual display.

Abstract: Automatic generation of intelligent content is created using a system of computers including a user device and a cloud-based component that processes the user information. The system performs a process that includes receiving an input document and parsing the input document to generate inputs for a natural language generation model using a text analysis model. The natural language generation model generates one or more candidate presentation scripts based on the inputs. A presentation script is selected from the candidate presentation scripts and displayed. A text-to-speech model may be used to generate a synthesized audio presentation of the presentation script. A final presentation may be generated that includes a visual display of the input document and the corresponding audio presentation in sync with the visual display.

Abstract: An intelligent speech assistant receives information collected while a user is speaking. The information can comprise speech data, vision data, or both, where the speech data is from the user speaking and the vision data is of the user while speaking. The assistant evaluates the speech data against a script which can contain information that the user should speak, information that the user should not speak, or both. The assistant collects instances where the user utters phrases that match the script or instances where the user utters phrases that do not match the script, depending on whether phases should or should not be spoken. The assistant evaluates vision data to identify gestures, facial expressions, and/or emotions of the user. Instances where the gestures, facial expressions, and/or emotions are not appropriate to the context are flagged. Real-time prompts and/or a summary is presented to the user as feedback.

Abstract: An intelligent speech assistant receives information collected while a user is speaking. The information can comprise speech data, vision data, or both, where the speech data is from the user speaking and the vision data is of the user while speaking. The assistant evaluates the speech data against a script which can contain information that the user should speak, information that the user should not speak, or both. The assistant collects instances where the user utters phrases that match the script or instances where the user utters phrases that do not match the script, depending on whether phases should or should not be spoken. The assistant evaluates vision data to identify gestures, facial expressions, and/or emotions of the user. Instances where the gestures, facial expressions, and/or emotions are not appropriate to the context are flagged. Real-time prompts and/or a summary is presented to the user as feedback.

Abstract: A method and system for speech rehearsal assistant during a presentation rehearsal includes receiving audio data from a speech rehearsal session over a network, receiving a transcript for the audio data, the transcript including a plurality of words spoken during the speech rehearsal session, calculating a real time speaking rate for the speech rehearsal session, determining if the speaking rate is within a threshold range, detecting utterance of a filler phrase or sound during the speech rehearsal session using at least in part a machine learning model trained for identifying filler phrases and sounds in a text, and upon determining the speaking rate falls outside the threshold range or detecting the utterance of the filler phrase or sound, enabling real time display of a notification on a display device.

Abstract: An interconnect structure includes a dielectric layer and a conductor embedded in the dielectric layer. A top surface of the conductor is flush with a top surface of the dielectric layer. A cobalt cap layer is deposited on the top surface of the conductor. A nitrogen-doped cobalt layer is disposed on the cobalt cap layer.

Abstract: An interconnect structure includes a dielectric layer and a conductor embedded in the dielectric layer. A top surface of the conductor is flush with a top surface of the dielectric layer. A cobalt cap layer is deposited on the top surface of the conductor. A nitrogen-doped cobalt layer is disposed on the cobalt cap layer.

Abstract: An interconnect structure includes a dielectric layer and a conductor embedded in the dielectric layer. A top surface of the conductor is flush with a top surface of the dielectric layer. A cobalt cap layer is deposited on the top surface of the conductor. A nitrogen-doped cobalt layer is disposed on the cobalt cap layer.

Abstract: A method is provided for forming copper material over a substrate. The method includes forming a barrier layer over a substrate. Then, a depositing-soaking-treatment (DST) process is performed over the barrier layer. A copper layer is formed on the cobalt layer. The DST process includes depositing a cobalt layer on the barrier layer. Then, the cobalt layer is soaked with H2 gas at a first pressure. The cobalt layer is treated with a H2 plasma at a second pressure. The second pressure is lower than the first pressure.

Abstract: An interconnect structure includes a dielectric layer and a conductor embedded in the dielectric layer. A top surface of the conductor is flush with a top surface of the dielectric layer. A cobalt cap layer is deposited on the top surface of the conductor. A nitrogen-doped cobalt layer is disposed on the cobalt cap layer.

Abstract: A method for manufacturing a semiconductor device is provided. The method comprises steps as follows. At least one trench is provided in a low-k dielectric layer on a substrate. The trench is filled with a copper (Cu) film. Pure cobalt (Co) is deposited on a surface of the Cu film by introducing a flow of a carrier gas carrying a Co-containing precursor and a reducing agent onto the surface of the Cu film. The flowrate of the flow is within a range from 5 to 19 sccm.

Abstract: A through silicon via structure is located in a recess of a substrate. The through silicon via structure includes a barrier layer, a buffer layer and a conductive layer. The barrier layer covers a surface of the recess. The buffer layer covers the barrier layer. The conductive layer is located on the buffer layer and fills the recess, wherein the contact surface between the conductive layer and the buffer layer is smoother than the contact surface between the buffer layer and the barrier layer. Moreover, a through silicon via process forming said through silicon via structure is also provided.

Abstract: A through silicon via structure is located in a recess of a substrate. The through silicon via structure includes a barrier layer, a buffer layer and a conductive layer. The barrier layer covers a surface of the recess. The buffer layer covers the barrier layer. The conductive layer is located on the buffer layer and fills the recess, wherein the contact surface between the conductive layer and the buffer layer is smoother than the contact surface between the buffer layer and the barrier layer. Moreover, a through silicon via process forming said through silicon via structure is also provided.

Abstract: A through silicon via structure is located in a recess of a substrate. The through silicon via structure includes a barrier layer, a buffer layer and a conductive layer. The barrier layer covers a surface of the recess. The buffer layer covers the barrier layer. The conductive layer is located on the buffer layer and fills the recess, wherein the contact surface between the conductive layer and the buffer layer is smoother than the contact surface between the buffer layer and the barrier layer. Moreover, a through silicon via process forming said through silicon via structure is also provided.

Abstract: A through silicon via process includes the following steps. A substrate having a front side and a back side is provided. A passivation layer is formed on the back side of the substrate. An oxide layer is formed on the passivation layer.

Abstract: In a process of forming a seed layer, particularly in a vertical trench or via, a semiconductor substrate having a dielectric structure and a hard mask structure thereon is provided. An opening is formed in the hard mask structure, and a trench or via is formed in the dielectric structure in communication with the opening, wherein an area of the opening is greater than that of an entrance of the trench or via. A seed layer is then deposited in the trench or via through the opening, and then subjected to a reflow process.

Abstract: A through silicon via process includes the following steps. A substrate having a front side and a back side is provided. A passivation layer is formed on the back side of the substrate. An oxide layer is formed on the passivation layer.

Abstract: A through silicon via structure is located in a recess of a substrate. The through silicon via structure includes a barrier layer, a buffer layer and a conductive layer. The barrier layer covers a surface of the recess. The buffer layer covers the barrier layer. The conductive layer is located on the buffer layer and fills the recess, wherein the contact surface between the conductive layer and the buffer layer is smoother than the contact surface between the buffer layer and the barrier layer. Moreover, a through silicon via process forming said through silicon via structure is also provided.