Abstract: A shaper mask for particle flux includes a central portion extending from a body of the shaper mask along a first axis to block at least a first portion of a particle flux through the shaper mask from a first direction. The mask also includes at least one off-axis portion. Each off-axis portions extends from the body of the shaper mask along a respective second axis different from the first axis. Each off-axis portion is shaped to block a respective second portion of the particle flux traveling through the shaper mask from a second direction different from the first direction.

Abstract: A magnetic element includes a pinned layer, a nonferromagnetic spacer layer, and a free layer. The nonferromagnetic spacer layer resides between the pinned layer and the free layer. The free layer has a track width of not more than 0.08 micron.

Abstract: A method and system for providing a magnetic structure that includes at least one magnetic material is disclosed. The method and system include defining the magnetic structure. The magnetic structure also includes a top layer that is insensitive to an istroropic carbonyl reactive ion etch. The defining of the magnetic structure results in at least one artifact. The method and system further includes cleaning the at least one artifact using at least one isotropic carbonyl reactive ion etch.

Abstract: The method and system for providing a magnetic element are disclosed. The method and system include providing a magnetic element stack that includes a plurality of layers and depositing a stop layer on the magnetic element stack. The method and system also include providing a dielectric antireflective coating (DARC) layer on the stop layer, forming a single layer mask for defining the magnetic element on a portion of the DARC layer, and removing a remaining portion of the DARC layer not covered by the single layer mask. The portion of the DARC layer covers a portion of the stop layer. The method further includes removing a remaining portion of the stop layer and defining the magnetic element using at least the portion of stop layer as a mask.

Abstract: A method and system for providing a tunneling magnetoresistive sensor is disclosed. The method and system include providing a pinned layer, a free layer and an insulating layer between the pinned and free layers. The pinned and free layers are ferromagnetic. The method and system also include providing a hard mask layer to be used in defining the sensor at the top of the tunneling magnetoresistive sensor. The method and system also include using the hard mask layer to define the tunneling magnetoresistive sensor. Thus, the pinned layer, the free layer and the insulating layer are capable of having a minimum dimension of less than 0.2 &mgr;m.

Abstract: A method and system for providing a tunneling junction is disclosed. The method and system includes providing a free layer, a pinned layer, and a barrier between the free layer and the pinned layer. The free layer and the pinned layer are ferromagnetic. The barrier layer is an insulator. The magnetic tunneling junction is coupled to an &agr;-Ta lead.

Abstract: A method and system for providing a magnetic tunneling junction is disclosed. The method and system includes providing a free layer, a pinned layer, and a barrier between the free layer and the pinned layer. The free layer and the pinned layer are ferromagnetic. The barrier layer is an insulator. The magnetic tunneling junction is coupled to a bit line. The bit line includes a ferromagnetic liner and a nonmagnetic core. The nonmagnetic core includes a top, a bottom and sides. The ferromagnetic liner includes at least one tab and is adjacent to the sides and a portion of the bottom of the nonmagnetic core. The at least one tab is adjacent to the portion of the bottom of the nonmagnetic core.

Abstract: A method and structure for providing a tunneling magnetoresistive (TMR) element is disclosed. The method and structure include providing a TMR layer that includes a first magnetic layer, a second magnetic layer and a first insulating layer disposed between the first magnetic layer and the second magnetic layer. The method and structure also include providing a first material and a protective layer. The first material allows electrical contact to be made to the tunneling magnetoresistive layer and is disposed above the tunneling magnetoresistive layer. The first material is capable of being undercut by an plasma etch without exposing a portion of the tunneling magnetoresistive layer under a remaining portion of the first material. The second protective layer covers a portion of the tunneling magnetoresistive sensor and a portion of the first material. In one aspect, the method and structure also include providing a second material disposed between the tunneling magnetoresistive layer and the first material.

Abstract: A magnetic head includes pole tips with aligned sidewalls and a low head profile. The aligned sidewalls are formed by depositing a stack of pole tip layers on a substrate. The stack of layers are etched through a common overlying mask. The stack of layers is covered over and around with a protective layer which is then planarized such that the stack of layers is exposed. The protective layer is etched to a predetermined thickness above the substrate, which is thinner than the thickness of the stack of layers. An inductive coil layer is deposited on the etched protective layer and covered with an overlying magnetic yoke layer which is dielectrically separated from the coil layer. The yoke layer thus formed assumes a low profile curvature due to the thin structure of the protective layer on the substrate.

Abstract: A magnetic head includes first and second pole tips separated by a nonmagnetic gap layer. The right side walls of the first and second pole tips are vertically aligned. Similarly, the left side walls of the first and second pole tips are vertically aligned. The side fringing flux is substantially reduced resulting in a magnetic head capable of writing data tracks with well defined boundaries. The fabrication of the magnetic head begins with forming a stack of layers on a substrate. The stack of layers includes a nonmagnetic layer sandwiched between the first pole tip layer and a sacrificial layer which is preferably made of a metal. A protective layer, such as alumina, is then deposited over and around the stack of layers. After planarization and ion milling, the sacrificial layer is exposed. The sacrificial layer is then etched away leaving a volume of space in the protective layer and above the gap layer. An inductive coil with associated dielectric layers are then deposited above the first pole layer.

Abstract: A thin film head apparatus and method for forming such a thin film head. In one approach, the present invention recites forming a cavity in a dielectric layer. Next, a layer of high magnetic field saturation (HBsat) material is sputter-deposited over the dielectric layer such that the HBsat material is deposited into the cavity formed in the dielectric layer. The cavity in the dielectric layer functions as a mold or “stencil” for the HBsat material. The HBsat material deposited into the cavity is used to form the first core of a thin film head. After the formation of the first core of the thin film head, a gap layer of material is deposited above the dielectric layer and above the first core. Next, a layer of HBsat material is sputter-deposited above the gap layer of material and above the first core of the thin film head. The layer of HBsat material disposed above the gap layer of material and above the first core is used to form the second core of the thin film head.

Abstract: A method and system for providing a top pinned spin-dependent tunneling sensor is disclosed. The method and system include providing a free layer, a tunneling barrier, a synthetic pinned layer and an antiferromagnetic layer. The free layer is ferromagnetic. The tunneling barrier is an insulator. The tunneling barrier is disposed between the free layer and the synthetic pinned layer. The synthetic pinned layer is ferromagnetic and includes a ferromagnetic top layer. The synthetic pinned layer is between the tunneling barrier and the antiferromagnetic layer. The ferromagnetic top layer acts as a seed layer for the antiferromagnetic layer.

Abstract: A magnetic head includes first and second pole tips separated by a nonmagnetic gap layer. The right side walls of the first and second pole tips are vertically aligned. Similarly, the left side walls of the first and second pole tips are vertically aligned. The side fringing flux is substantially reduced resulting in a magnetic head capable of writing data tracks with well defined boundaries. The fabrication of the magnetic head begins with forming a stack of layers on a substrate. The stack of layers includes a nonmagnetic layer sandwiched between the first pole tip layer and a sacrificial layer which is preferably made of a metal. A protective layer, such as alumina, is then deposited over and around the stack of layers. After planarization and ion milling, the sacrificial layer is exposed. The sacrificial layer is then etched away leaving a volume of space in the protective layer and above the gap layer. An inductive coil with associated dielectric layers are then deposited above the first pole layer.

Abstract: A magnetic head includes pole tips with aligned sidewalls and a low head profile. The aligned sidewalls are formed by depositing a stack of pole tip layers on a substrate. The stack of layers are etched through a common overlying mask. The stack of layers is covered over and around with a protective layer which is then planarized such that the stack of layers is exposed. The protective layer is etched to a predetermined thickness above the substrate, which is thinner than the thickness of the stack of layers. An inductive coil layer is deposited on the etched protective layer and covered with an overlying magnetic yoke layer which is dielectrically separated from the coil layer. The yoke layer thus formed assumes a low profile curvature due to the thin structure of the protective layer on the substrate.