Abstract: In a method and system for reducing power consumed by a magnetic memory, magnetic memory cells are coupled to a bit line and are associated with a plurality of digit lines. A bit line current is provided in the bit line. Digit currents are provided in parallel in the digit lines at substantially the same time as the bit line current. The digit and bit line currents allow the magnetic memory cells to be written to a plurality of states in parallel.

Abstract: A magnetic random access memory (MRAM) device has increased ?R/R for sensing a state of a pin-dependent tunneling (SDT) device. The MRAM device includes plural transistors connected to a read line for sensing the state of the SDT device. Plural transistors lower an underlying resistance during reading, increasing ?R/R. The plural transistors can share a source region.

Abstract: Electromagnetic transducers are disclosed having write poles with a leading edge that is smaller than a trailing edge, which can reduce erroneous writing for perpendicular recording systems. The write poles may have a trapezoidal shape when viewed from a direction of an associated medium. The write poles may be incorporated in heads or sliders that also contain read elements such as magnetoresistive sensors, and may be employed with information storage systems such as disk drives.

Abstract: An MRAM cell includes a pinned layer, a free layer, and a bit line with a magnetic sheath. The magnetic sheath allows a magnetic field to circulate in a loop around the bit line. The looping magnetic field can couple with the magnetic field of the free layer for enhanced stability with respect to stray magnetic fields and elevated temperatures.

Abstract: A method and system for providing a writer is disclosed. The method and system include providing a first pole, an insulator covering a portion of the first pole and a coil on the first insulator. The coil includes a plurality of turns. The method and system also include providing a second insulator covering the coil, providing a second pole on the second insulator and providing a write gap separating a portion of the first pole from a second portion of the second pole. A first portion of the second pole is coupled with the first pole. In one aspect, the method and system include providing a coil having a plurality of turns with a pitch of no more than 1.2 micrometers. In another aspect, the plurality of turns of the coil is provided using a hard mask layer on a photoresist layer. A portion of the hard mask layer and a portion of the photoresist layer define a plurality of spaces between the pluralities of turns of the coil. In another aspect, the writer is a pedestal defined zero throat writer.

Abstract: A tunneling barrier for a spin dependent tunneling (SDT) device is disclosed that includes a plurality of ferromagnetic atoms disposed in a substantially homogenous layer. The presence of such atoms in the tunneling barrier is believed to increase a magnetoresistance or &Dgr;R/R response, improving the signal and the signal to noise ratio. Such an increase &Dgr;R/R response also offers the possibility of decreasing an area of the tunnel barrier layer. Decreasing the area of the tunnel barrier layer can afford improvements in resolution of devices such as MR sensors and increased density of devices such as of MRAM cells.

Abstract: An inductive transducer having first and second magnetic pedestals disposed between first and second magnetic pole layers and adjacent to a media-facing surface, the pedestals separated by a submicron, nonmagnetic gap. The first pedestal extends less than the second pedestal from the media-facing surface, defining a short throat height. The second pedestal extends further to provide sufficient area for stitching to the second pole layer. The stitching and the thickness provided by the pedestals allow plural coil layers to be disposed between the pole layers, and the second pedestal, as well as other features, can be defined by high-resolution photolithography. The two coil layers have lower resistance, lower inductance and allow the pole layers to be shorter, improving performance. All or part of either or both of the pedestals may be formed of high magnetic saturation material, further enhancing performance.

Abstract: A tunneling barrier for a spin dependent tunneling (SDT) device is disclosed that includes a plurality of ferromagnetic particles. The presence of such particles in the tunneling barrier has been found to increase a magnetoresistance or &Dgr;R/R response, improving the signal and the signal to noise ratio. Such an increased &Dgr;R/R response also offers the possibility of decreasing an area of the tunnel barrier layer and/or increasing a thickness of the tunnel barrier layer. Decreasing the area of the tunnel barrier layer can afford improvements in resolution of devices such as MR sensors and increased density of devices such as of MRAM cells. Increasing the thickness of the tunnel barrier can afford improvements in manufacturing such as increased yield.