Abstract: The present invention pro ides a method of providing an electrical contact on a graphene surface, the method comprising: (i) providing a graphene layer structure comprising one or more graphene layers and having a polymer coating on a surface thereof; (ii) contacting one or more portions of the polymer coating with a conductive metal-containing composition comprising a solvent, wherein the polymer coating is soluble in the solvent: and (iii) volatilising the solvent to deposit the conductive metal on the surface of the graphene layer structure.

Abstract: A graphene Hall sensor for operation at cryogenic temperatures is provided. The graphene Hall sensor comprises a substrate, a graphene sheet, a dielectric layer, a first pair of electrical contacts, and a second pair of electrical contacts. The graphene sheet is provided on the substrate. The dielectric layer is provided on the graphene sheet. The graphene sheet and the dielectric layer share a continuous outer edge surface. The first pair of electrical contacts are in electrical contact with the graphene sheet and spaced apart along a first direction. The second pair of electrical contacts are in electrical contact with the graphene sheet and spaced apart along a second direction. The first direction is perpendicular to the second direction, wherein a path along the first direction between the first pair of electrical contacts crosses a path along the second direction between the second pair of electrical contacts. The graphene sheet has a sheet carrier density in the range of 2×1011 cm?2 to 1×1013 cm?2.

Abstract: There is provided a method 100 of producing an electronic device precursor 200, the method 100 comprising: (i) providing 105 a plasma-etchable layer structure 210 on a plasma-resistant substrate 205, wherein the layer structure 210 has an exposed upper surface; (ii) patterning 110 a plasma-resistant dielectric 215 onto the exposed upper surface to form an intermediate having at least one covered region and at least one uncovered region of the layer structure 210; (iii) subjecting the intermediate to plasma etching 115, whereby the at least one uncovered region of the layer structure 210 is etched away to form at least one covered region of the layer structure 210 having an exposed edge surface; (iv) forming 120 an ohmic contact 220a, 220b in direct contact with a portion of the exposed edge surface; wherein the plasma-etchable layer structure 210 comprises one or more graphene layers which extend across the covered regions of the layer structure 210 to the exposed edge surface.

Abstract: A method of field mapping a cell under load is provided. The method comprises the steps of: providing a cell; providing a Hall effect sensor comprising a graphene conductor for measuring a magnetic field; positioning the Hall effect sensor at a first position adjacent a face of the cell; applying a load to the cell; and measuring an output of the Hall effect sensor.

Abstract: The present invention provides a method for the production of a polymer-coated graphene layer structure, the method comprising: providing a substrate on a heated susceptor in a reaction chamber, the chamber having a plurality of cooled inlets arranged so that, in use, the inlets are distributed across the substrate and have a constant separation from the substrate, supplying a flow comprising a precursor compound through the inlets and into the reaction chamber to thereby decompose the precursor compound and form a graphene layer structure on the substrate, wherein the inlets are cooled to less than 100° C. and the susceptor is heated to a temperature of at least 50° C.

Abstract: The present invention pro ides a method of providing an electrical contact on a graphene surface, the method comprising: (i) providing a graphene layer structure comprising one or more graphene layers and having a polymer coating on a surface thereof; (ii) contacting one or more portions of the polymer coating with a conductive metal-containing composition comprising a solvent, wherein the polymer coating is soluble in the solvent: and (iii) volatilising the solvent to deposit the conductive metal on the surface of the graphene layer structure.

Abstract: The present invention provides a method for the production of an electronic device, the method comprising: (i) providing a substrate comprising first and second layers on a heated susceptor in a reaction chamber, the chamber having a plurality of cooled inlets arranged so that, in use, the inlets are distributed across the substrate and have a constant separation from the substrate, (ii) supplying a flow comprising a precursor compound through the inlets and into the reaction chamber to thereby decompose the precursor compound and form a graphene layer structure on a surface of the first layer of the substrate, wherein the inlets are cooled to less than 100° C. and the susceptor is heated to a temperature of at least 50° C.

Abstract: The present invention relates to a method of forming a material on a graphene layer structure 5 for injecting charge into, or extracting charge out of, the graphene layer structure 5, the method comprising: providing a graphene layer structure 5 having one or more first portions 25 on a non-metallic substrate 10, said one or more first portions 25 having one or more surface defects comprising excess out-of-plane material 15; plasma etching the one or more first portions 25 of the graphene layer structure 5 to remove the out-of-plane material 15; depositing a material 30 for injecting charge into, or extracting charge out of, the graphene layer structure 5 onto the one or more plasma-etched first portions 25.

Abstract: Methods of providing an air- and/or moisture-barrier coating on at least a portion of a two-dimensional material are described. In particular, the methods provide an improved approach for providing a doped two-dimensional material, preferably graphene, on a substrate wherein at least a portion of the two-dimensional material is coated with an air- and/or moisture-barrier coating that comprises an inorganic oxide, fluoride or sulfide. Two-dimensional materials provided with an air- and/or moisture impermeable inorganic oxide, fluoride or sulfide coating and an electronic device comprising the same are also described.

Abstract: Described is a salt of the general formula: Mg2+(Lx)6(PF6)2 wherein each L is a ligand selected from dichloromethane, a cyclic ether, or a nitrile of the general formula R—C?N. The method of making the salt comprises the steps: providing Mg metal, activating the Mg metal in a first dry solution comprising a first ligand solution (L1), treating the dry solution of activated Mg metal and L1 with NOPF6 in a second dry solution comprising a second ligand solution (L2), heating the treated Mg metal solution removing residual solvent under vacuum, and recrystallizing the remaining solid to form the salt wherein Lx comprises a mixture of L1 and L2. The salt can be used as the salt in an electrolyte, or as an additive to an electrolyte, in a cell or battery.

Abstract: Described is a salt of the general formula: Mg2+(Lx)6(PF6)2 wherein each L is a ligand selected from dichloromethane, a cyclic ether, or a nitrile of the general formula R—C?N. The method of making the salt comprises the steps: providing Mg metal, activating the Mg metal in a first dry solution comprising a first ligand solution (L1), treating the dry solution of activated Mg metal and L1 with NOPF6 in a second dry solution comprising a second ligand solution (L2), heating the treated Mg metal solution removing residual solvent under vacuum, and recrystallizing the remaining solid to form the salt wherein Lx comprises a mixture of L1 and L2. The salt can be used as the salt in an electrolyte, or as an additive to an electrolyte, in a cell or battery.