Abstract: Disclosed herein are back-contact electrode photovoltaic devices that incorporate hybrid perovskite absorber materials and utilize their properties in order to create an entirely new photovoltaic device architecture. The provided devices include a number of architectures, including single-absorber devices and tandem devices, all of which incorporate the BC configuration. This new class of devices yields not only high performance photovoltaic devices but also promises to reduce manufacturing cost and complexity.

Abstract: Devices and methods are provided for generating electrical power using a capacitor. The capacitor has a catalytic working electrode, a dielectric, and a counter electrode. Power is generated by flowing a fuel (e.g., hydrogen gas) over the working electrode, charging the capacitor (e.g. by applying a voltage), flowing an oxidant (e.g., oxygen gas) over the working electrode, and connecting the electrodes to a resistive load, which allows current to flow through the load, between the electrodes. The inverse device (i.e., oxidant first, then fuel) functions similarly.

Abstract: Devices and methods are provided for generating electrical power using a capacitor. The capacitor has a catalytic working electrode, a dielectric, and a counter electrode. Power is generated by flowing a fuel (e.g., hydrogen gas) over the working electrode, charging the capacitor (e.g. by applying a voltage), flowing an oxidant (e.g., oxygen gas) over the working electrode, and connecting the electrodes to a resistive load, which allows current to flow through the load, between the electrodes. The inverse device (i.e., oxidant first, then fuel) functions similarly.

Abstract: Embodiments of the present invention generally include methods for forming semiconductor films having nominal I2-II-IV-VI4 stoichiometry, such as CZTS or CZTSSe, using a solution of including sources of the I, II, IV, and VI elements in a liquid solvent. Precursors may be mixed in the solvent to form the solution. Metal halide salts may be used as precursors in some examples. The solution may be coated onto a substrate and annealed to yield the semiconductor film. In some examples, the source of the ‘I’ and ‘IV’ elements may contain the elements in a +2 oxidation state, while the semiconductor film may contain the ‘I’ element in a +1 oxidation state and the ‘IV’ element in a +4 oxidation state. Examples may be used to provide I2-(II,IV)-IV-VI4 films.

Abstract: A method of fabrication of thin films for photovoltaic or electronic applications is provided. The method includes fabricating a nanocrystal precursor layer and selenizing the nanocrystal precursor layer in a selenium containing atmosphere. The nanocrystal precursor layer includes one of CuInS2, CuIn(Sy,Se1-y)2, CuGaS2, CuGa(Sy, Se1-y)2, Cu(InxGa1-x)S2, and Cu(InxGa1-x)(Sy, Se1-y)2 nanoparticles and combinations thereof, wherein 0?x?1 and 0?y?1.

Abstract: A method of fabrication of thin films for photovoltaic or electronic applications is provided. The method includes fabricating a nanocrystal precursor layer and selenizing the nanocrystal precursor layer in a selenium containing atmosphere. The nanocrystal precursor layer includes one of CuInS2, CuIn(Sy,Se1?y)2, CuGaS2, CuGa(Sy,Se1?y)2, Cu(InxGa1?x)S2, and Cu(InxGa1?x)(Sy,Se1?y)2 nanoparticles and combinations thereof, wherein 0?x?1 and 1?y?0.