Abstract: The disclosure describes a method for modeling excess base current in irradiated bipolar junction transistors (BJTs). The method includes quantifying defect-related electrostatic effects of a BJT device to help improve accuracy in predicting an irradiated excess base current of the BJT device. The method can be adapted to model the excess base current of a lateral P-type-N-type-P-type (LPNP) BJT device in depleted and/or accumulated surface potential states. The predicted excess base current may be used to qualify or disqualify the BJT device or an electrical circuit including the BJT device for use in a space system(s) as a commercial-off-the-shelf (COTS) component. By modeling the excess base current based on quantifying and utilizing the defect-related electrostatic effects, it may be possible to accurately predict a total-ionizing-dose (TID) response of the BJT device, thus enabling faster and lower-cost qualification of a COTS component(s) for use in the space system(s).

Abstract: A method for modeling excess base current in irradiated bipolar junction transistors (BJTs) is provided. The method includes quantifying defect-related electrostatic effects of a BJT device to help improve accuracy in predicting an irradiated excess base current of the BJT device. In examples discussed herein, the method can be adapted to model the excess base current of a lateral P-type-N-type-P-type (LPNP) BJT device in depleted and/or accumulated surface potential states. The predicted excess base current may be used to qualify or disqualify the BJT device or an electrical circuit including the BJT device for use in a space system(s) as a commercial-off-the-shelf (COTS) component. By modeling the excess base current based on quantifying and utilizing the defect-related electrostatic effects, it may be possible to accurately predict a total-ionizing-dose (TID) response of the BJT device, thus enabling faster and lower-cost qualification of a COTS component(s) for use in the space system(s).

Abstract: This disclosure relates generally to systems and methods for simulating physical active semiconductor components using in silico active semiconductor components. To simulate charge degradation effect(s) in a circuit simulation, a simulated defect signal level is produced. More specifically, the simulated defect signal level simulates at least one charge degradation effect in the in silico active semiconductor component as a function of simulation time and a simulated input signal level of a simulated input signal. As such, the charge degradation effect(s) are simulated externally with respect to the in silico active semiconductor component. In this manner, the in silico active semiconductor component does not need to be reprogrammed in order to simulate charge degradation effects.

Abstract: This disclosure relates generally to systems and methods for simulating physical active semiconductor components using in silico active semiconductor components. To simulate charge degradation effect(s) in a circuit simulation, a simulated defect signal level is produced. More specifically, the simulated defect signal level simulates at least one charge degradation effect in the in silico active semiconductor component as a function of simulation time and a simulated input signal level of a simulated input signal. As such, the charge degradation effect(s) are simulated externally with respect to the in silico active semiconductor component. In this manner, the in silico active semiconductor component does not need to be reprogrammed in order to simulate charge degradation effects.

Abstract: The present invention relates generally to the detection of high energy radiation. The present invention relates more particularly to the film bulk acoustic wave resonator-based devices, and their use in the detection of high energy radiation. One aspect of the invention is a method for detecting high energy radiation, the method comprising providing a film bulk acoustic wave resonator having a zinc oxide piezoelectric layer in substantial contact with a dielectric layer; exposing the film bulk acoustic wave resonator to the high energy radiation; determining the resonant frequency of the film bulk acoustic wave resonator; and determining the dose of high energy radiation using the resonant frequency of the film bulk acoustic wave resonator.

Abstract: The present invention relates generally to the detection of high energy radiation. The present invention relates more particularly to the film bulk acoustic wave resonator-based devices, and their use in the detection of high energy radiation. One aspect of the invention is a method for detecting high energy radiation, the method comprising providing a film bulk acoustic wave resonator having a zinc oxide piezoelectric layer in substantial contact with a dielectric layer; exposing the film bulk acoustic wave resonator to the high energy radiation; determining the resonant frequency of the film bulk acoustic wave resonator; and determining the dose of high energy radiation using the resonant frequency of the film bulk acoustic wave resonator.